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相关论文: Finite temperature dynamics of the Mott insulating…

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The finite-temperature phase diagram of the Hubbard model in $d=3$ is obtained from renormalization-group analysis. It exhibits, around half filling, an antiferromagnetic phase and, between 30%--40% electron or hole doping from half…

强关联电子 · 物理学 2007-05-23 G. Migliorini , A. N. Berker

The thermodynamics of the inhomogeneous one-dimensional repulsive fermionic Hubbard model with parabolic confinement is studied by a density-functional theory approach, based on Mermin's generalization to finite temperatures. A…

强关联电子 · 物理学 2019-04-25 V. L. Campo

We study the second order finite temperature Mott transition point in the fully frustrated Hubbard model at half filling, within Dynamical Mean Field Theory. Using quantum Monte Carlo simulations we show the existence of a finite…

强关联电子 · 物理学 2009-10-31 Marcelo J. Rozenberg , R. Chitra , G. Kotliar

At the Mott transition, electron-electron interaction changes a metal, in which electrons are itinerant, to an insulator, in which electrons are localized. This phenomenon is central to quantum materials. Here we contribute to its…

强关联电子 · 物理学 2019-02-20 C. Walsh , P. Sémon , D. Poulin , G. Sordi , A. -M. S. Tremblay

We study spin and charge dynamics of stripes in doped Mott insulators by considering a two-dimensional Hubbard model with N fermion flavors. For N =2 we recover the normal one-band model while for N -> infty a spin density wave mean-field…

强关联电子 · 物理学 2009-11-07 F. F. Assaad , V. Rousseau , F. Hebert , M. Feldbacher , G. G. Batrouni

We study finite-temperature transport properties of the one-dimensional Hubbard model using the density matrix renormalization group. Our aim is two-fold: First, we compute both the charge and the spin current correlation function of the…

强关联电子 · 物理学 2015-06-22 C. Karrasch , D. M. Kennes , J. E. Moore

We report a systematic study of the transition from a band insulator (BI) to a Mott insulator (MI) in a one-dimensional Hubbard model at half-filling with an on-site Coulomb interaction U and an alternating periodic site potential V. We…

强关联电子 · 物理学 2009-10-31 Jizhong Lou , Shaojin Qin , Tao Xiang , Changfeng Chen , Guang-Shan Tian , Zhaobin Su

We address the problem of calculating finite-temperature response functions of an experimentally relevant low-dimensional strongly-correlated system: the integrable 1D Bose gas with repulsive \delta-function interaction (Lieb-Liniger…

量子气体 · 物理学 2014-03-10 Miłosz Panfil , Jean-Sébastien Caux

The Hubbard model is a longstanding problem in the theory of strongly correlated electrons and a very active one in the experiments with ultracold fermionic atoms. Motivated by current and prospective quantum simulations, we apply a…

强关联电子 · 物理学 2022-11-07 Aritra Sinha , Marek M. Rams , Piotr Czarnik , Jacek Dziarmaga

Finite-temperature phase transitions in quasi-one-dimensional quarter-filled systems are investigated by the extended Hubbard model with electron-lattice coupling. Using a quantum Monte Carlo method combined with the inter-chain mean-field…

强关联电子 · 物理学 2008-11-11 Yuichi Otsuka , Hitoshi Seo , Yukitoshi Motome , Takeo Kato

We calculate the low temperature spectral function of one-dimensional incommensurate charge density wave (CDW) states and half-filled Mott insulators (MI). At $T=0$ there are two dispersing features associated with the spin and charge…

强关联电子 · 物理学 2009-11-07 F. H. L. Essler , A. M. Tsvelik

The Iterated Perturbation Theory (IPT) equations of the Dynamical Mean Field Theory (DMFT) for the half-filled Hubbard model, are solved on nearly real frequencies at various values of the Hubbard parameters $U$, to investigate the nature…

强关联电子 · 物理学 2008-08-05 M. B. Fathi , S. A. Jafari

We investigate the nature of the insulating phases in a bilayer Hubbard model with intralayer coupling $t$ and interlayer coupling $t_{\perp}$ at large interaction strength $U/t$ and half-filling. We consider a dynamical cluster…

强关联电子 · 物理学 2015-06-17 Hunpyo Lee , Yu-Zhong Zhang , Harald O. Jeschke , Roser Valenti

We develop a finite-temperature perturbation theory for quasi-one-dimensional quantum spin systems, in the manner suggested by H.J. Schulz (1996) and use this formalism to study their dynamical response. The corrections to the random-phase…

强关联电子 · 物理学 2009-11-07 Marc Bocquet

We study the charge dynamics of the half-filled Hubbard model on the square lattice at zero temperature. We employ a slave-fermion formulation in which the charge degrees of freedom are represented by fermionic holons and doublons and the…

强关联电子 · 物理学 2024-06-26 X. J. Han , Y. Liu , Z. Y. Liu , X. Li , J. Chen , Z. Y. Xie , B. Normand , T. Xiang

Inspired by recent experiments on 3He films between one and two atoms thick, we consider a bilayer Hubbard model on a triangular lattice. Our results are obtained in the framework of a cluster dynamical mean-field calculation with a quantum…

强关联电子 · 物理学 2011-04-14 K. S. D. Beach , F. F. Assaad

Although the one dimensional (1D) repulsive Fermi-Hubbard model has been intensively studied over many decades, a rigorous understanding of many aspects of the model is still lacking. In this work, based on the solutions to the…

强关联电子 · 物理学 2023-05-17 Jia-Jia Luo , Han Pu , Xi-Wen Guan

We present a new approach to the static finite temperature correlation functions of the Heisenberg chain based on functional equations. An inhomogeneous generalization of the n-site density operator is considered. The lattice path integral…

统计力学 · 物理学 2012-08-09 Britta Aufgebauer , Andreas Klümper

We employ dynamical mean field theory (DMFT) with a Quantum Monte Carlo (QMC) atomic solver to investigate the finite temperature Mott transition in the Hubbard model with the nearest neighbor hopping on a triangular lattice at…

强关联电子 · 物理学 2009-11-11 K. Aryanpour , W. E. Pickett , R. T. Scalettar

We describe a low-temperature approach to the two-dimensional half-filled Hubbard model which allows us to study both antiferromagnetism and single-particle properties. This approach ignores amplitude fluctuations of the antiferromagnetic…

强关联电子 · 物理学 2007-05-23 K. Borejsza , N. Dupuis