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We present a method for reading out the spin state of electrons in a quantum dot that is robust against charge noise and can be used even when the electron temperature exceeds the energy splitting between the states. The spin states are…

By measuring electron tunneling between a ferromagnet and individual energy levels in an aluminum quantum dot, we show how spin-resolved quantum states can be used as filters to determine spin-dependent tunneling rates. We also observe…

介观与纳米尺度物理 · 物理学 2009-11-07 Mandar M. Deshmukh , D. C. Ralph

We demonstrate experimentally a read-out method that distinguishes between two-electron spin states in a quantum dot. This scheme combines the advantages of the two existing mechanisms for spin-to-charge conversion with single-shot charge…

Spin is a fundamental property of all elementary particles. Classically it can be viewed as a tiny magnetic moment, but a measurement of an electron spin along the direction of an external magnetic field can have only two outcomes: parallel…

介观与纳米尺度物理 · 物理学 2007-05-23 J. M. Elzerman , R. Hanson , L. H. Willems van Beveren , B. Witkamp , L. M. K. Vandersypen , L. P. Kouwenhoven

We study the charge transfer dynamics between a silicon quantum dot and an individual phosphorous donor using the conduction through the quantum dot as a probe for the donor ionization state. We use a silicon n-MOSFET (metal oxide field…

介观与纳米尺度物理 · 物理学 2015-06-04 G. Mazzeo , E. Prati , M. Belli , G. Leti , S. Cocco , M. Fanciulli , F. Guagliardo , G. Ferrari

We consider to detect the electron spin of a doped atom, i.e., a nitrogen or a phosphorus, caged in a fullerene by currently available technique of the scanning tunneling microscope (STM), which actually corresponds to the readout of a…

量子物理 · 物理学 2009-11-13 M. Feng , G. J. Dong , B. Hu

We apply an analysis of time-dependent spin-polarized current in a semiconductor channel at room temperature to establish how the magnetization configuration and dynamics of three ferromagnetic terminals, two of them biased and third…

介观与纳米尺度物理 · 物理学 2008-02-20 L. Cywinski , H. Dery , L. J. Sham

Full counting statistics is a powerful tool to characterize the noise and correlations in transport through mesoscopic systems. In this work, we propose the theory of conditional spin counting statistics, i.e., the statistical fluctuations…

介观与纳米尺度物理 · 物理学 2014-02-18 JunYan Luo , Jing Hu , XiaoLi Lang , Yu Shen , Xiao-Ling He , HuJun Jiao

Using real-time charge sensing and gate pulsing techniques we measure the ratio of the rates for tunneling into the excited and ground spin states of a single-electron AlGaAs/GaAs quantum dot in a parallel magnetic field. We find that the…

介观与纳米尺度物理 · 物理学 2012-04-06 S. Amasha , K. MacLean , Iuliana P. Radu , D. M. Zumbuhl , M. A. Kastner , M. P. Hanson , A. C. Gossard

One of the long-standing goals of quantum transport is to use the noise, rather than the average current, for information processing. However, achieving this requires on-demand control of quantum fluctuations in the electric current. In…

介观与纳米尺度物理 · 物理学 2021-05-12 Nicholas S. Davis , Samuel L. Rudge , Daniel S. Kosov

We study the full counting statistics of electric current to several drain terminals with spin-dependent entrance conductances. We show that the statistics of charge transfers can be interpreted in terms of single electrons and spin-singlet…

介观与纳米尺度物理 · 物理学 2007-05-23 Antonio Di Lorenzo , Yuli V. Nazarov

The radio frequency single electron transistor (rf-SET) possesses key requirements necessary for reading out a solid state quantum computer. This work explores the use of the rf-SET as a single-shot readout device in the presence of 1/f and…

介观与纳米尺度物理 · 物理学 2007-05-23 T. M. Buehler , D. J. Reilly , R. P. Starrett , Andrew D. Greentree , A. R. Hamilton , A. S. Dzurak , R. G. Clark

We present a new way of continuously reading-out the state of a single electronic spin. Our detection scheme is based on an exchange interaction between the electronic spin and a nearby read-out quantum dot. The coupling between the two…

介观与纳米尺度物理 · 物理学 2017-11-21 Clément Godfrin , Stefan Thiele , Karim Ferhat , Svetlana Klyatskaya , Mario Ruben , Wolfgang Wernsdorfer , Franck Balestro

We calculate the spectral density of voltage fluctuations in a Single Electron Transistor (SET), biased to operate in a transport mode where tunneling events are correlated due to Coulomb interaction. The whole spectrum from low frequency…

凝聚态物理 · 物理学 2009-11-07 Goran Johansson , Andreas Kack , Goran Wendin

High fidelity qubit readout is critical in order to obtain the thresholds needed to implement quantum error correction protocols and achieve fault-tolerant quantum computing. Large-scale silicon qubit devices will have densely-packed arrays…

We describe a method to control and detect in single-shot the electron spin state of an individual donor in silicon with greatly enhanced sensitivity. A silicon-based Single-Electron Transistor (SET) allows for spin-dependent tunneling of…

介观与纳米尺度物理 · 物理学 2009-09-11 A. Morello , C. C. Escott , H. Huebl , L. H. Willems van Beveren , L. C. L. Hollenberg , D. N. Jamieson , A. S. Dzurak , R. G. Clark

Determination of qubit initialisation and measurement fidelity is important for the overall performance of a quantum computer. However, the method by which it is calculated in semiconductor qubits varies between experiments. In this paper…

量子物理 · 物理学 2019-09-04 D. Keith , S. K. Gorman , L. Kranz , Y. He , J. G. Keizer , M. A. Broome , M. Y. Simmons

Two-electron charged self-assembled quantum dot molecules exhibit a decoherence-avoiding singlet-triplet qubit subspace and an efficient spin-photon interface. Here, we demonstrate that the cycling transitions originating from auxiliary…

介观与纳米尺度物理 · 物理学 2015-09-15 Y. L. Delley , M. Kroner , S. Faelt , W. Wegscheider , A. İmamoğlu

Electron spins in silicon quantum dots provide a promising route towards realising the large number of coupled qubits required for a useful quantum processor. At present, the requisite single-shot spin qubit measurements are performed using…

Silicon spin qubits based on metal-oxide-semiconductor (MOS) technology are compatible with semiconductor manufacturing and offer a route to scalable quantum processing. However, spin readout typically relies on proximal charge sensors,…

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