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Al(110) has been studied for temperatures up to 900 K via ensemble density-functional molecular dynamics. The strong anharmonicity displayed by this surface results in a negative coefficient of thermal expansion, where the first interlayer…

材料科学 · 物理学 2009-10-31 Nicola Marzari , David Vanderbilt , Alessandro De Vita , M. C. Payne

We present a Scanning Tunneling Microscopy (STM) investigation of gold deposited at the magnetite Fe3O4(001) surface at room temperature. This surface forms a reconstruction with (\surd2\times\surd2)R45{\deg} symmetry, where pairs of Fe and…

We present a combined angle-resolved photoemission spectroscopy (ARPES) and first-principles calculations study of the electronic structure of LaAgSb$_2$ in the entire first Brillouin zone. We observe a Dirac-cone-like structure in the…

材料科学 · 物理学 2016-02-24 X. Shi , P. Richard , Kefeng Wang , M. Liu , C. E. Matt , N. Xu , R. S. Dhaka , Z. Ristic , T. Qian , Y. -F. Yang , C. Petrovic , M. Shi , H. Ding

Band gap tuning and dielectric properties of small organic ligands adsorbed on bidimensional germanium monolayers (germanene) have been investigated using first-principles calculations. We show that the adsorption of these small groups…

Unique electronic properties of self-organized Au atom chains on Ge(001) in novel c(8x2) long-range order are revealed by scanning tunneling microscopy. Along the nanowires an exceptionally narrow conduction path exists which is virtually…

强关联电子 · 物理学 2009-11-13 J. Schaefer , C. Blumenstein , S. Meyer , M. Wisniewski , R. Claessen

Two-dimensional (2D) ferroelectric (FE) materials are promising compounds for next-generation nonvolatile memories, due to their low energy consumption and high endurance. Among them, {\alpha}-In$_{2}$Se$_{3}$ has drawn particular attention…

Two dimensional electron gases (2DEGs) at a oxide heterostructures are attracting considerable attention, as these might substitute conventional semiconductors for novel electronic devices [1]. Here we present a minimal set-up for such a…

We performed a combined angle-resolved photoemission spectroscopy and scanning tunneling microscopy study of the electronic structure of electron-doped Ca$_{0.83}$La$_{0.17}$Fe$_2$As$_2$. A surface reconstruction associated with the…

超导电性 · 物理学 2013-01-08 Y. -B. Huang , P. Richard , J. -H. Wang , X. -P. Wang , X. Shi , N. Xu , Z. Wu , A. Li , J. -X. Yin , T. Qian , B. Lv , C. W. Chu , S. H. Pan , M. Shi , H. Ding

We have performed voltage dependent imaging and spatially resolved spectroscopy on the (110) surface of Te doped GaAs single crystals with a low temperature scanning tunneling microscope (STM). A large fraction of the observed defects are…

材料科学 · 物理学 2009-10-31 A. Depuydt , C. Van Haesendonck , N. S. Maslova , V. I. Panov , S. V. Savinov , P. I. Arseev

Honeycomb bismuthene structures on Ag(111) were investigated using low-energy electron diffraction (LEED) and density functional theory. LEED I(V) analysis revealed that 0.5 monolayer (ML) of Bi forms an ultraflat honeycomb lattice with…

材料科学 · 物理学 2026-02-11 Ziyong Zhang , Xiaobin Chen , Takeshi Nakagawa

We report direct measurements via angle-resolved photoemission spectroscopy (ARPES) of the electronic dispersion of single-layer CoO$_2$. The Fermi contour consists of a large hole pocket centered at the $\overline{\Gamma}$ point. To…

At a coverage of about 1/3 monolayer, Sn deposited on Ge(111) below 550 forms a metastable (sqrt3 x sqrt3)R30 phase. This phase continuously and reversibly transforms into a (3x3) one, upon cooling below 200 K. The photoemission spectra of…

强关联电子 · 物理学 2009-10-31 L. Petaccia , L. Floreano , M. Benes , D. Cvetko , A. Goldoni , L. Grill , A. Morgante , A. Verdini , S. Modesti

The magnetic and electronic properties of the layered Zintl-phase compound EuAl$_2$Ge$_2$ crystallizing in the trigonal CaAl$_2$Si$_2$-type structure are reported. Our neutron-diffraction measurements show that EuAl$_2$Ge$_2$ undergoes…

The structural, electronic and dynamical properties of a group of 2D germanium-based compounds, including GeC, GeN, GeO, GeSi, GeS, GeSe, and germanene, are investigated by employing first-principles calculations. The most stable structure…

We report a novel method for depositing patterned dielectric layers with sub-micron features using atomic layer deposition (ALD). The patterned films are superior to sputtered or evaporated films in continuity, smoothness, conformality, and…

介观与纳米尺度物理 · 物理学 2009-11-10 M. J. Biercuk , D. J. Monsma , C. M. Marcus , J. S. Becker , R. G. Gordon

Accurate atomic coordinates of the room-temperature (root3xroot3)R30degree and low-temperature (3x3) phases of 1/3 ML Sn on Ge(111) have been established by grazing-incidence x-ray diffraction with synchrotron radiation. The Sn atoms are…

材料科学 · 物理学 2009-10-31 O. Bunk , J. H. Zeysing , G. Falkenberg , R. L. Johnson , M. Nielsen , M. M. Nielsen , R. Feidenhans'l

We report scanning tunneling microscopy observations of Ge deposited on the Si(111)-7x7 surface for a sequence of sub-monolayer coverages. We demonstrate that Ge atoms replace so-called Si adatoms. Initially, the replacements are random,…

材料科学 · 物理学 2007-05-23 Y. L. Wang , H. -J. Gao , H. M. Guo , Sanwu Wang , Sokrates T. Pantelides

We investigate the currently debated issue of the existence of the Dirac cone in silicene on an Ag(111) surface, using first-principles calculations based on density functional theory to obtain the band structure. By unfolding the band…

材料科学 · 物理学 2015-04-15 Yun-Peng Wang , Hai-Ping Cheng

Group V element analogues of graphene have attracted a lot attention recently due to their semiconducting band structures, which make them promising for next generation electronic and optoelectronic devices based on two-dimensional…

材料科学 · 物理学 2020-03-24 J. Shah , W. Wang , H. M. Sohail , R. I. G. Uhrberg

Surface alloying is a straightforward route to control and modify the structure and electronic properties of surfaces. Here, We present a systematical study on the structural and electronic properties of three novel rare earth-based…

材料科学 · 物理学 2020-05-07 Yande Que , Yuan Zhuang , Ziyuan Liu , Chaoqiang Xu , Bin Liu , Kedong Wang , Shixuan Du , Xudong Xiao