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Bandgaps in layered materials are critical for enabling functionalities such as tunable photodetection, efficient energy conversion, and nonlinear optical responses, which are essential for next-generation photonic and quantum devices. Gap…

Inorganic lead halide perovskites are promising candidates for optoelectronic applications, due to their bandgap tunability, high photoluminescence quantum yield, and narrow emission line widths. In particular, they offer the possibility to…

InSe, a member of the layered materials family, is a superior electronic and optical material which retains a direct bandgap feature from the bulk to atomically thin few-layers and high electronic mobility down to a single layer limit. We,…

Bandgap engineering in semiconductors is required for the development of photonic and optoelectronic devices with optimized absorption and emission energies. This is usually achieved by changing the chemical or structural composition during…

Energy bandgap largely determines the optical and electronic properties of a semiconductor. Variable bandgap therefore makes versatile functionality possible in a single material. In layered material black phosphorus, the bandgap can be…

Using nanoprobe X-ray diffraction microscopy, we investigate the relationship between residual strains from crystal growth in CsPbBr$_3$ thin film crystals, their stability, and local bandgap. We find that out-of-plane compressive strain…

材料科学 · 物理学 2018-11-29 Xueying Li , Yanqi Luo , Martin Holt , Zhonghou Cai , David P. Fenning

Controlling the bandgap through local-strain engineering is an exciting avenue for tailoring optoelectronic materials. Two-dimensional crystals are particularly suited for this purpose because they can withstand unprecedented…

Halide perovskites are promising semiconductors for inexpensive, high-performance optoelectronics. Despite a remarkable defect tolerance compared to conventional semiconductors, perovskite thin films still show substantial microscale…

Halide perovskites perform remarkably in optoelectronic devices including tandem photovoltaics. However, this exceptional performance is striking given that perovskites exhibit deep charge carrier traps and spatial compositional and…

The electronic band structure of complex nanostructured semiconductors has a considerable effect on the final electronic and optical properties of the material and, ultimately, on the functionality of the devices incorporating them. Valence…

The energy bandgap is an intrinsic character of semiconductors, which largely determines their properties. The ability to continuously and reversibly tune the bandgap of a single device during real time operation is of great importance not…

介观与纳米尺度物理 · 物理学 2017-04-26 Shi-Li Yan , Zhi-Jian Xie , Jian-Hao Chen , Takashi Taniguchi , Kenji Watanabe

The electrical generation and detection of elastic waves are the foundation for acousto-electronic and acousto-optic systems. For surface-acoustic-wave devices, micro-/nano-electromechanical systems, and phononic crystals, tailoring the…

介观与纳米尺度物理 · 物理学 2018-05-14 Lu Zheng , Hui Dong , Xiaoyu Wu , Yen-Lin Huang , Wenbo Wang , Weida Wu , Zheng Wang , Keji Lai

Recently rediscovered black phosphorus is a layered semiconductor with promising electronic and photonic properties. Dynamic control of its bandgap can enable novel device applications and allow for the exploration of new physical…

介观与纳米尺度物理 · 物理学 2017-04-21 Bingchen Deng , Vy Tran , Hao Jiang , Cheng Li , Yujun Xie , Qiushi Guo , Xiaomu Wang , He Tian , Han Wang , Judy J. Cha , Qiangfei Xia , Li Yang , Fengnian Xia

The local variation in inter-atomic distances, or local lattice strain often influences significantly material properties of nanoparticles. Strain measurement with ~1% precision is provided by recent atomic-resolution electron microscopy.…

材料科学 · 物理学 2021-07-09 Kohei Aso , Jens Maebe , Xuan Quy Tran , Tomokazu Yamamoto , Yoshifumi Oshima , Syo Matsumura

The bandgap of MoS2 is highly strain-tunable which results in the modulation of its electrical conductivity and manifests itself as the piezoresistive effect while a piezoelectric effect was also observed in odd-layered MoS2 with broken…

介观与纳米尺度物理 · 物理学 2015-07-22 Sajedeh Manzeli , Adrien Allain , Amirhossein Ghadimi , Andras Kis

Strain engineering has proven to be vital for germanium-based photonics, in particular light emission. However, applying a large permanent biaxial strain to germanium has been a challenge. We present a simple, CMOS-compatible technique to…

Scanning Probe Microscopy is used to study and quantify the nanoscale electric phenomena in the two classes of oxide systems, namely transport at electroactive grain boundaries and surface behavior of ferroelectric materials. Scanning…

材料科学 · 物理学 2007-05-23 Sergei V. Kalinin

The tunability of the bandgap, absorption and emission energies, photoluminescence (PL) quantum yield, exciton transport, and energy transfer in transition metal dichalcogenide (TMD) monolayers provides a new class of functions for a wide…

Recent studies suggest that piezoelectric polarization can play an important role in determining the electronic and optical properties of nanoscale nitride heterostructures. Among a few models available, recent first-principles calculations…

介观与纳米尺度物理 · 物理学 2014-10-15 Vinay Uday Chimalgi , Md Rezaul Karim Nishat , Shaikh Shahid Ahmed

Large bending of materials can occur at the nanoscale in response to an electric polarization, what is called the flexoelectric effect, but to date this has not been observed directly. We report the direct observation of large flexoelectric…

材料科学 · 物理学 2019-09-16 Pratik Koirala , Christopher Mizzi , Laurence D. Marks
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