相关论文: Low-threshold optically pumped lasing in highly st…
Among the wide-bandgap compound semiconductors, gallium nitride is the most widely available material due to its prevalence in the solid state lighting and high-speed/high-power electronics industries. It is now known that GaN is one of…
Laser micro-welding is an advanced manufacturing method today applied in various domains. However, important physical limitations have prevented so far to demonstrate its applicability in silicon and other technology-essential…
Semiconductor nanowire (NW) lasers are a promising technology for the realisation of coherent optical sources with extremely small footprint. To fully realize their potential as building blocks in on-chip photonic systems, scalable methods…
We theoretically propose directional, low-threshold plasmon lasing in both the near-infrared and visible wavelengths by utilizing spatially coherent surface plasmon polaritons on a meta-surface. The gain strength required for threshold…
Nanowires are versatile nanostructures, which allow an exquisite control over bandgap energies and charge carrier dynamics making them highly attractive as building blocks for a broad range of photonic devices. For optimal solutions…
Physical models of Ge energy band structure and material loss were implemented in LASTIP(TM), a 2D simulation tool for edge emitting laser diodes. The model calculation is able to match experimental data available. Important design…
Squeezed light is a quantum resource that can improve the sensitivity of optical measurements. However, existing sources of squeezed light generally require high powers and are not amenable to portability. Here we theoretically investigate…
Active core-shell nanoresonators were designed in order to achieve large near-field enhancement, large power-outflow and minimal spaser threshold in the pump E-field strength. Gain-metal-dielectric (GMD) and gain-metal-gain (GMG)…
We address the problem of achieving an optical random laser with a cloud of cold atoms, in which gain and scattering are provided by the same atoms. The lasing threshold can be defined using the on-resonance optical thickness b0 as a single…
InGaN-based active layers within microcavity resonators offer the potential of low threshold lasers in the blue spectral range. Here we demonstrate optically pumped, room temperature lasing in high quality factor GaN microdisk cavities…
We present detailed experimental and numerical studies of random lasing in weakly scattering systems. The interference of scattered light, which is weak in the passive systems, is greatly enhanced in the presence of high gain, providing…
Strain engineering has been a ubiquitous paradigm to tailor the electronic band structure and harness the associated new or enhanced fundamental properties in semiconductors. In this regard, semiconductor membranes emerged as a versatile…
We show that using maskless photolithography and the lift-off technique, patterned yttrium iron garnet thin films possessing ultra-low Gilbert damping can be accomplished. The films of 70 nm thickness were grown on (001)-oriented gadolinium…
We extend Lamb's reduced density matrix laser theory to analyze the inhomogeneous molecular couplings and the mode-correlation in a plasmonic nano-laser consisting of a gold sphere and many dye molecules interacting with a driving optical…
The realization of high-$\beta$ lasers is one of the prime applications of cavity-QED promising ultra-low thresholds, integrability and reduced power consumption in the field of \textit{green photonics}. In such nanolasers spontaneous…
Photodetectors at telecommunications-band with high efficiency and high speed are becoming increasingly important as the booming of big data, 5G, internet of things, cloud computing, artificial intelligence and relevent applications.…
Sn-containing Si and Ge alloys belong to an emerging family of semiconductors with the potential to impact group IV semiconductor devices. Indeed, the ability to independently engineer both lattice parameter and band gap holds the premise…
The frozen mode regime is a unique slow-light scenario in periodic structures, where the flat-bands (zero group velocity) are associated with the formation of high-order stationary points (aka exceptional points). The formation of…
An unprecedented double-threshold lasing behavior has been observed in a plasmonic random laser composed of Au nanoislands decorated on vertically standing ZnO nanorods, infiltrated with dye-doped polymer matrix. The strong coupling of…
The longwave infrared (LWIR) region of the spectrum spans 8 to 14 {\mu}m and enables high-performance sensing and imaging for detection, ranging, and monitoring. Chip-scale integrated LWIR photonics has enormous potential for real-time…