相关论文: Heat-Assisted Multiferroic Solid-State Memory
Field variation of heat capacity at fixed temperatures is investigated to identify the origin of the field induced first order phase transition in polycrystalline Ce(Fe$_{0.094}$Al$_{0.04}$)$_2$ sample. The heat capacity at 4.5K and 3.5K…
We propose an all-electric implementation of a precessionally switched perpendicular magnetic anisotropy magneto-tunneling-junction (p-MTJ) based toggle memory cell where data is written with voltage-controlled-magnetic-anisotropy (VCMA)…
The ground state properties of correlated electron systems can be extraordinarily sensitive to external stimuli, such as temperature, strain, and electromagnetic fields, offering abundant platforms for functional materials. We present a…
The advent of caloric materials for magnetocaloric, elastocaloric, and electrocaloric cooling is changing the landscape of solid state cooling technologies with potentials for high-efficiency and environmentally-friendly residential and…
FeRh has a phase transition from an antiferromagnetic state (low temperature) to a ferromagnetic state (high temperature) at 360 K. Various explanations for this behavior have been proposed over the past 20 years. However, many of the…
Type-II multiferroic materials, in which ferroelectric polarization is induced by inversion non-symmetric magnetic order, promise new and highly efficient multifunctional applications based on the mutual control of magnetic and electric…
We developed a cryogenic temperature deposition process for high-performance CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) on 300 mm thermally oxidized silicon wafers. The effect of the deposition temperature of the CoFeB layers on the…
On the basis of first-principles calculations we show that the M-type hexaferrite BaFe12O19 exhibits frustrated antiferroelectricity associated with its trigonal bipyramidal Fe3+ sites. The ferroelectric (FE) state of BaFe12O19, reachable…
We investigate the structural, magnetocrystalline anisotropy, critical behaviour, and magnetocaloric effect in the layered room-temperature monoclinic ferromagnet Cr$_{1.38}$Te$_2$. The critical behavior is studied by employing various…
Memristive devices are promising elements for energy-efficient neuromorphic computing and future artificial intelligence systems. For diffusive memristors, the device state switching occurs because of the sequential formation and…
We report a systematic study of current-induced perpendicular magnetization switching in W/Co$_{x}$Tb$_{1-x}$/Al thin films with strong perpendicular magnetic anisotropy. Various Co$_{x}$Tb$_{1-x}$ ferrimagnetic alloys with different…
We measured the temperature dependences of the static magnetization and the spin excitation in a square-lattice multiferroics Ba$_2$MnGe$_2$O$_7$. An anisotropy gap of the observed low energy mode is scaled by electric polarization rather…
The bistability of ordered spin states in ferromagnets (FMs) provides the magnetic memory functionality. Traditionally, the macroscopic moment of ordered spins in FMs is utilized to write information on magnetic media by a weak external…
As computing power demands continue to grow, superconducting electronics present an opportunity to reduce power consumption by increasing the energy efficiency of digital logic and memory. A key milestone for scaling this technology is the…
The multiferroic properties of EuTiO3 are greatly enhanced when a sample is strained, signifying that coupling between strain and structural, magnetic or ferroelectric order parameters is extremely important. Here resonant ultrasound…
Magnetic and/or dielectric behaviors have been studied for YBaCuFeO5, LuBaCuFeO5 and TmBaCuFeO5, which are known as members of oxygen-defect ordered perovskite systems RBaCuFeO5 (R=lanthanides Ln and other trivalent elements) and have two…
On the basis of a first-principles, relativistic electronic structure theory of finite temperature metallic magnetism, we investigate the variation of magnetic anisotropy, K, with magnetisation, M, in metallic ferromagnets. We apply the…
We studied the magnetization reversal rates of thermally assisted spin transfer torque switching in a ferromagnetically coupled synthetic free layer theoretically. By solving the Fokker-Planck equation, we obtained the analytical expression…
The intriguing interplay between competing degrees of freedom in frustrated magnets can lead to non-trivial magnetic phenomena with exotic low-energy excitations that are highly relevant for addressing some of the fundamental questions in…
We investigate switching of magnetic tunnel junctions (MTJs) driven by the thermal effect of the transport current through the junctions. The switching occurs in a specially designed composite free layer, which acts as one of the MTJ…