相关论文: Heat-Assisted Multiferroic Solid-State Memory
We investigated the effect of using a synthetic ferrimagnetic (SyF) free layer in MgO-based magnetic tunnel junctions (MTJs) on current-induced magnetization switching (CIMS), particularly for application to spin-transfer torque random…
We study thermodynamic behaviors of the antiferromagnetic zigzag spin chain in magnetic fields, using the density-matrix renormalization group method for the quantum transfer matrix. We focus on the thermodynamics of the system near the…
Homogeneous freestanding films have been obtained by the direct current (DC) magnetron sputtering technique using a sacrificial layer. After annealing, the films are crystallized with a strong out-of-plane texture along the (022) direction.…
Magnetization switching in ferromagnets has so far been limited to the current-induced spin-orbit-torque effects. Recent observation of helicity-independent all-optical magnetization switching in exchange-coupled ferromagnet ferrimagnet…
This work reports on the thermal stability of two amorphous CoFeB layers coupled antiferromagnetically via a thin Ru interlayer. The saturation field of the artificial ferrimagnet which is determined by the coupling, J, is almost…
Shape memory alloys (SMAs) exhibit hysteresis behaviors upon stress and temperature induced loadings. In this contribution, we focus on numerical simulations of microstructure evolution of cubic-to-tetragonal martensitic phase…
We measured the temperature dependence of the saturation magnetization (Ms) of a (La1-xPrx)1-yCayMnO3 (x ~ 0.60, y ~ 0.33) film as a function of applied bending stress. Stress producing a compressive strain of -0.01% along the magnetic easy…
Our measured dielectric constant and mechanical response of multiferroic BiFeO3 indicate four phase transitions below room temperature. Features correlate with those reported at 50K (from a peak in the zero-field-cooled magnetic…
A study by specific heat of a polycrystalline sample of the low-dimensional magnetic system Y$_2$BaCuO$_5$ is presented. Magnetic fields up to 14 T are applied and permit to extract the ($T$,$H$) phase diagram. Below $\mu_0H^*\simeq2$ T,…
The independent control of two magnetic electrodes and spin-coherent transport in magnetic tunnel junctions are strictly required for tunneling magnetoresistance, while junctions with only one ferromagnetic electrode exhibit tunneling…
CrI$_{3}$ is considered to be a promising candidate for spintronic devices and data storage. We derived the Heisenberg Hamiltonian for CrI$_{3}$ from density functional calculations using the Liechtenstein formula. Moreover, the…
The temperature dependent order parameter provides important information on the nature of magnetism. Using traditional methods to study this parameter in two-dimensional (2D) magnets remains difficult, however, particularly for insulating…
Studies of interlayer transport in layered metals have generally made use of zero temperature conductivity expressions to analyze angle-dependent magnetoresistance oscillations (AMRO). However, recent high temperature AMRO experiments have…
Strain-mediated voltage control of magnetization in piezoelectric/ferromagnetic systems is a promising mechanism to implement energy-efficient spintronic memory devices. Here, we demonstrate giant voltage manipulation of MgO magnetic tunnel…
The speed of writing of state-of-the-art ferromagnetic memories is physically limited by an intrinsic GHz threshold. Recently, an alternative research direction has been initiated by realizing memory devices based on antiferromagnets in…
We investigate the thermodynamic properties of a field-induced supersolid phase in a 2D quantum antiferromagnet model. Using quantum Monte Carlo simulations, a very rich phase diagram is mapped out in the temperature - magnetic field plane,…
Voltage-driven 180$^\circ$ magnetization switching without electric current provides the possibility for revolutionizing the spintronics. We demonstrated the voltage-driven charge-mediated 180$^\circ$ magnetization switching at room…
Increasing the magnetic data recording density requires reducing the size of the individual memory elements of a recording layer as well as employing magnetic materials with temperature-dependent functionalities. Therefore, it is predicted…
We present direct evidence of above room temperature magneto-electricity in single-phase Li0.05Ti0.02Ni0.93O with above-ambient antiferromagnetic ordering. Temperature-hysteresis in warming/cooling heat-flow thermograms establishes a…
Understanding energy transport at the nanoscale is an open and fundamental challenge in the molecular sciences with direct implications for the design of new electronics, computing devices, and materials. While nanoscale energy transport…