相关论文: Heat-Assisted Multiferroic Solid-State Memory
Information technologies require entangling data stability with encryption for a next generation of secure data storage. Current magnetic memories, ranging from low-density stripes up to high-density hard drives, can ultimately be detected…
Electric field-induced magnetization switching in multiferroics holds profound promise for ultra-low-energy computing in beyond Moore's law era. Bistable nanomagnets in the multiferroics are usually deemed to be suitable for storing a…
The dynamic process of assisted magnetic switchins has been simulated to investigate the associated physics. The model uses a Voronoi construction to determine the physical structure of the nano granular thin film recording media; and the…
Electric-field induced magnetization switching in multiferroic magnetoelectric devices is promising for beyond Moore's law computing. We show here that interface-coupled multiferroic heterostructures, i.e., a ferroelectric layer coupled…
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast switching speeds and robustness against magnetic fields. Different device concepts have been predicted and experimentally demonstrated, such as…
The coexistence and coupling between magnetization and electric polarization in multiferroic materials provide extra degrees of freedom for creating next-generation memory devices. A variety of concepts of multiferroic or magnetoelectric…
Rotating the magnetization of a magnetostrictive nanomagnet with electrically generated mechanical strain dissipates miniscule amount of energy compared to any other rotation method and would have been the ideal method to write bits in…
Magnetic straintronics, the strain-mediated control of magnetic anisotropy, has emerged as a key direction for next-generation energy-efficient technologies. In multiferroic heterostructures, magnetoelectric coupling is typically achieved…
Magnetoelectric mutual control in multiferroics, which is the electric control of magnetization, or reciprocally the magnetic control of polarization has attracted much attention because of its possible applications to spintronic devices,…
Thermally assisted magnetic writing is an important technology utilizing temperature dependent magnetic properties to enable orientation of a magnetic data storage medium. Using an atomistic spin model we study non-equilibrium field cooled…
Multiferroic devices hold profound promise for ultra-low energy computing in beyond Moore's law era. The magnetization of a magnetostrictive shape-anisotropic single-domain nanomagnet strain-coupled with a piezoelectric layer in a…
Multiferroic BaMnF$_4$ powder were prepared by hydrothermal method. Hysteretic field dependent magnetization curve at 5 K confirms the weak ferromagnetism aroused from the canted antiferromagnetic spins by magnetoelectric coupling. The…
Prospective spintronic memory and logic devices will benefit from the negligible stray field and ultrafast magnetic dynamics inherent to antiferromagnets [1]. However, realizing isothermal, nonvolatile, and deterministic switching of…
Strain-mediated multiferroic composites, i.e., piezoelectric-magnetostrictive heterostructures, hold profound promise for energy-efficient computing in beyond Moore's law era. While reading a bit of information stored in the…
The prospect of all electrically controlled writing of ferromagnetic bits is highly desirable for developing scalable and energy-efficient spintronics devices. In the present work, we perform micromagnetic simulations to investigate the…
The magnetic orientations and switching fields of a CoCrPt-Ru-CoCrPt synthetic ferrimagnet with perpendicular magnetic anisotropy have been studied in the temperature range from 2 K to 300 K. It was found that two sets of magnetic…
Switching the magnetization of a shape-anisotropic 2-phase multiferroic nanomagnet with voltage-generated stress is known to dissipate very little energy ($<$ 1 aJ for a switching time of $\sim$0.5 ns) at 0 K temperature. Here, we show by…
Artificial multiferroics consist of two types of ferroic materials, typically a ferroelectric and ferromagnet, often coupled interfacially by magnetostriction induced by the lattice elongations in the ferroelectric. In BaTiO3 the magnitude…
A common perception assumes that magnetic memories require ferromagnetic materials with a non-zero net magnetic moment. However, it has been recently proposed that compensated antiferromagnets with a zero net moment may represent a viable…
Intensive studies have been made on antiferromagnets as candidate materials for next generation memory bits due to their ultrafast dynamics reaching picosecond time scales. Recent demonstrations of electrical bidirectional switching of…