相关论文: Hole spin resonance and spin-orbit coupling in a s…
We experimentally and theoretically investigate the spin orbit (SO) field in a physically defined, p type metal oxide semiconductor double quantum dot in silicon. We measure the magnetic field dependence of the leakage current through the…
Spins in semiconductor quantum dots constitute a promising platform for scalable quantum information processing. Coupling them strongly to the photonic modes of superconducting microwave resonators would enable fast non-demolition readout…
We propose and theoretically analyze a novel metal-oxide-semiconductor field-effect-transistor (MOSFET) type of spin transistor (hereafter referred to as a spin MOSFET) consisting of a MOS gate structure and half-metallic-ferromagnet (HMF)…
We present a theoretical study of a spin field-effect transistor realized in a quantum well formed in a p--doped ferromagnetic-semiconductor- nonmagnetic-semiconductor-ferromagnetic-semiconductor hybrid structure. Based on an…
We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map…
We report the experimental observation of the spin-Hall effect in a two-dimensional (2D) hole system with Rashba spin-orbit coupling. The 2D hole layer is a part of a p-n junction light-emitting diode with a specially designed co-planar…
We study the effect of the coupling between the hole $s$ shell of one quantum dot and the $p$ shell in the other dot forming a quantum dot molecule on the spin relaxation between the sublevels of the hole $s$ state. Using an effective model…
We present the first findings of the spin transistor effect in the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the n-type Si (100) surface. The coherence and phase sensitivity…
In this work, we study hole transport in a planar silicon metal-oxide-semiconductor based double quantum dot. We demonstrate Pauli spin blockade in the few hole regime and map the spin relaxation induced leakage current as a function of…
We investigated the resonant tunneling of a two-spin system through the double quantum dots in Al-N-implanted silicon tunnel FETs (TFETs) by electrical-transport measurements and Landau-Zener-St\"{u}ckelberg-Majorana interferometry with and…
We present the first findings of the spin transistor effect caused by the Rashba gate-controlled ring embedded in the p-type self-assembled silicon quantum well that is prepared on the Si (100) surface. The coherence and phase sensitivity…
The use of the spin Hall effect and its inverse to electrically detect and manipulate dynamic spin currents generated via ferromagnetic resonance (FMR) driven spin pumping has enabled the investigation of these dynamically injected currents…
We have studied the spin transport characteristics of a spin metal-oxide-semiconductor field-effect transistor (spin MOSFET), particularly the bias voltage dependence of the electron spin polarization P_S in Si and the magnetoresistance…
Silicon quantum dots are a leading approach for solid-state quantum bits. However, developing this technology is complicated by the multi-valley nature of silicon. Here we observe transport of individual electrons in a silicon CMOS-based…
Quasi-one-dimensional hole gas is achievable in a semiconductor Ge nanowire. The lowest two subband dispersions of the hole gas are just two shifted parabolic curves with an anticrossing at $k_{z}=0$. This peculiar low-energy subband…
We propose and analyze a new method for manipulation of a heavy hole spin in a quantum dot. Due to spin-orbit coupling between states with different orbital momenta and opposite spin orientations, an applied rf electric field induces…
Two-level quantum systems with strong spin-orbit coupling allow for all-electrical qubit control and long-distance qubit coupling via microwave and phonon cavities, making them of particular interest for scalable quantum information…
We have experimentally and theoretically investigated the electron spin transport and spin distribution at room temperature in a Si two-dimensional (2D) inversion channel of back-gate-type spin metal-oxide-semiconductor field-effect…
The effect of spin-orbit interaction on electron transport properties of a cross-junction structure is studied. It is shown that it results in spin polarization of left and right outgoing electron waves. Consequently, incoming electron wave…
We investigate the effect of spin-orbit interaction on the intra- and interdot particle dynamics of a double quantum dot under ac electric fields. The former is modeled as an effective ac magnetic field that produces electric-dipole spin…