相关论文: Defects controlled hole doping and multi-valley tr…
We report a systematic study of superconductivity on Fe1-xZnxSe single crystals synthesized over a broad Zn doping range (x = 0-0.023). High-quality single crystals across all compositions range exhibit superconducting transitions, while…
The potential of Fe2TiSn full-Heusler compounds for thermoelectric applications has been suggested theoretically, but not yet grounded experimentally, due to the difficulty of obtaining reproducible, homogeneous, phase pure and defect free…
Tuning the ambipolar behavior in charge carrier transport via defect-engineering is crucial for achieving high mobility transistors for nonlinear logic circuits. Here, we present the electric-field tunable electron and hole transport in a…
Two-dimensional (2D) materials may have potential applications in thermoelectric devices. In this work, we systematically investigate the thermoelectric properties of orthorhombic group IV-VI monolayers $\mathrm{AB}$ (A=Ge and Sn; B=S and…
InSe is a van der Waals semiconductor in which mechanical flexibility, high electronic mobility, and non-trivial electronic structures converge, making it an attractive platform for both intriguing fundamental studies and promising device…
The family of Van der Waals dichalcogenides (VdWDs) includes a large number of compositions and phases, exhibiting varied properties and functionalities. They have opened up a novel electronics of two-dimensional materials, characterized by…
Excellent thermoelectric performance in the out-of-layer n-doped SnSe has been observed experimentally (Chang et al., Science 360, 778-783 (2018)). However, a first-principles investigation of the dominant scattering mechanisms governing…
The superconductor Sn_{1-x}In_{x}Te is a doped topological crystalline insulator and has become important as a candidate topological superconductor, but its superconducting phase diagram is poorly understood. By measuring about 50 samples…
Angle-resolved photoemission spectroscopy (ARPES) reveals effects of electron doping, which is realized by Co and Ni substitution for Fe in FeTe$_{1-y}$Se$_{y}$ (y$\sim$0.35) superconductor. The data show consistent band shifts as well as…
The missing hole packets near the Brillouin zone center render unique electronic structures to the heavily electron doped FeSe-based superconductors with Tc above 40 K. It challenges the existing scenario accounting for the nature of…
Half-Heusler phases are among the most extensively studied thermoelectic materials. Bipolar thermal conductivity analysis performed for their sub-group based on rare-earth (R) metals, RNiSb, indicated on high mobility ratio in favor of…
The concept of a polar metal proposes new approach of current-induced polarization control for ferroelectrics. We fabricate SnSe/WTe$_2$ heterostructure to experimentally investigate charge transport between two ferroelectric van der Waals…
Scanning tunneling experiments on single crystals of superconducting FeTe$_{0.55}$Se$_{0.45}$ have recently provided evidence for discrete energy levels inside vortices. Although predicted long ago, such levels are seldom resolved due to…
The binary compound SnSe exhibits record high thermoelectric performance, largely because of its very low thermal conductivity. The origin of the strong phonon anharmonicity leading to the low thermal conductivity of SnSe is investigated…
The microscopic coexistence of ferroelectricity and ferromagnetism in solids remains a fundamental challenge in condensed matter physics, with far-reaching implications for multifunctional materials and next-generation electronic devices.…
The realization of multiferroicity in 2D nanomaterials is crucially important for designing advanced nanoelectronic devices such as non-volatile multistate data storage. In this work, the coexistence of ferromagnetism and ferroelectricity…
Ferroelectric tunnel junctions, in which ferroelectric polarization and quantum tunneling are closely coupled to induce the tunneling electroresistance (TER) effect, have attracted considerable interest due to their potential in…
The microscopic arrangement of atoms and molecules is the determining factor in how materials behave and perform. Beyond the long-range periodicity, the local disorder with local structures deviating from the average lattice structure plays…
GeTe is a chemically simple IV-VI semiconductor which bears a rich plethora of different physical properties induced by doping and external stimuli. These include, among others, ferromagnetism, ferroelectricity, phase-change memory…
Single-layer transition metal dichalcogenide (TMD) WSe2 has recently attracted a lot of attention because it is a 2D semiconductor with a direct band-gap. Due to low doping levels it is intrinsic and shows ambipolar transport. This opens up…