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相关论文: Valley Dynamics of Excitons in Monolayer Dichalcog…

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Monolayer (1L) transition metal dichalcogenides (TMDCs) are attractive materials for several optoelectronic applications because of their strong excitonic resonances and valley-selective response. Valley excitons in 1L-TMDCs are formed at…

光学 · 物理学 2018-05-30 Alex Krasnok , Andrea Alu

Monolayers of transition metal dichalcogenides, namely, molybdenum and tungsten disulfides and diselenides demonstrate unusual optical properties related to the spin-valley locking effect. Particularly, excitation of monolayers by…

介观与纳米尺度物理 · 物理学 2015-11-12 M. M. Glazov , E. L. Ivchenko , G. Wang , T. Amand , X. Marie , B. Urbaszek , B. L. Liu

Two-dimensional transition metal dichalcogenide (TMD) semiconductors provide a unique possibility to access the electronic valley degree of freedom using polarized light, opening the way to valley information transfer between distant…

Semiconducting transition metal dichalcogenide monolayers have emerged as promising candidates for future valleytronics-based quantum information technologies. Two distinct momentum-states of tightly-bound electron-hole pairs in these…

介观与纳米尺度物理 · 物理学 2017-03-16 Gerd Plechinger , Tobias Korn , John M. Lupton

Atomically thin materials such as graphene and monolayer transition metal dichalcogenides (TMDs) exhibit remarkable physical properties resulting from their reduced dimensionality and crystal symmetry. The family of semiconducting…

Since the discovery of semiconducting monolayer transition metal dichalcogenides, a variety of experimental and theoretical studies have been carried out seeking to understand the intrinsic exciton population decay and valley relaxation…

介观与纳米尺度物理 · 物理学 2016-05-04 Galan Moody , John Schaibley , Xiaodong Xu

In monolayer transition metal dichalcogenides, tightly bound excitons have been discovered with a valley pseudospin that can be optically addressed through polarization selection rules. Here, we show that this valley pseudospin is strongly…

介观与纳米尺度物理 · 物理学 2014-05-20 Hongyi Yu , Guibin Liu , Pu Gong , Xiaodong Xu , Wang Yao

Monolayer transition metal dichalcogenides feature tightly bound bright excitons at the degenerate valleys, where electron-hole Coulomb exchange interaction strongly couples the valley pseudospin to the momentum of exciton. Placed on…

介观与纳米尺度物理 · 物理学 2022-06-01 Xu-Chen Yang , Hongyi Yu , Wang Yao

The valley pseudospin in monolayer transition metal dichalcogenides (TMDs) has been proposed as a new way to manipulate information in various optoelectronic devices. This relies on a large valley polarization that remains stable over long…

介观与纳米尺度物理 · 物理学 2017-12-22 Fahad Mahmood , Zhanybek Alpichshev , Yi-Hsien Lee , Jing Kong , Nuh Gedik

Monolayer transition metal dichalcogenides (TMDCs) constitute the core group of materials in the emerging semiconductor technology of valleytronics. While the coupled spin-valley physics of pristine TMDC materials and their heterstructures…

介观与纳米尺度物理 · 物理学 2023-11-14 Chumki Nayak , Suvadip Masanta , Sukanya Ghosh , Shubhadip Moulick , Atindra Nath Pal , Indrani Bose , Achintya Singha

Monolayers of transition metal dichalcogenides (TMDCs) feature exceptional optical properties that are dominated by excitons, tightly bound electron-hole pairs. Forming van der Waals heterostructures by deterministically stacking individual…

Monolayers of transition metal dichalcogenides are promising materials for valleytronic applications, since they possess two individually addressable excitonic transitions at the non-equivalent $K$ and $K'$ points with different spins,…

介观与纳米尺度物理 · 物理学 2020-07-01 Malte Selig , Florian Katsch , Samuel Brem , Garnik F. Mkrtchian , Ermin Malic , Andreas Knorr

Excitons, composite electron-hole quasiparticles, are known to play an important role in optoelectronic phenomena in many semiconducting materials. Recent experiments and theory indicate that the band-gap optics of the newly discovered…

介观与纳米尺度物理 · 物理学 2015-09-02 Yuri N. Gartstein , Xiao Li , Chuanwei Zhang

In monolayer Transition Metal Dichalcogenides (TMDs) the valence and conduction bands are spin split because of the strong spin-orbit interaction. In tungsten-based TMDs the spin-ordering of the conduction band is such that the so-called…

Monolayer group-VIB transition metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include: the visible range direct band gap ideal for exploring…

介观与纳米尺度物理 · 物理学 2015-07-30 Hongyi Yu , Xiaodong Cui , Xiaodong Xu , Wang Yao

The presence of two spin-split valleys in monolayer (1L) transition metal dichalcogenide (TMD) semiconductors supports versatile exciton species classified by their spin and valley quantum numbers. While the spin-0 intravalley exciton,…

介观与纳米尺度物理 · 物理学 2020-07-22 Yueh-Chun Wu , Sarath Samudrala , Andrew McClung , Takashi Taniguchi , Kenji Watanabe , Amir Arbabi , Jun Yan

The valley degree of freedom is a sought-after quantum number in monolayer transition-metal dichalcogenides. Similar to optical spin orientation in semiconductors, the helicity of absorbed photons can be relayed to the valley (pseudospin)…

介观与纳米尺度物理 · 物理学 2020-04-01 Min Yang , Cedric Robert , Zhengguang Lu , Dinh Van Tuan , Dmitry Smirnov , Xavier Marie , Hanan Dery

Layered transition metal dichalcogenides (TMDCs) host a variety of strongly bound exciton complexes that control the optical properties in these materials. Apart from spin and valley, layer index provides an additional degree of freedom in…

介观与纳米尺度物理 · 物理学 2019-05-08 Sarthak Das , Garima Gupta , Kausik Majumdar

Excitons in monolayer semiconductors have large optical transition dipole for strong coupling with light field. Interlayer excitons in heterobilayers, with layer separation of electron and hole components, feature large electric dipole that…

介观与纳米尺度物理 · 物理学 2019-03-07 Wei-Ting Hsu , Bo-Han Lin , Li-Syuan Lu , Ming-Hao Lee , Ming-Wen Chu , Lain-Jong Li , Wang Yao , Wen-Hao Chang , Chih-Kang Shih

Single layers of transition metal dichalcogenides are two-dimensional direct bandgap semiconductors with degenerate, but inequivalent, `valleys' in the electronic structure that can be selectively excited by polarized light. Coherent…

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