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The quantum interaction between molecules and electrode s material at molecules-electrode interfaces is a major ingredient in the electronic transport properties of organic junctions. Driven by the coupling strength between the two…

Graphene-based vertical heterostructures, particularly stacks incorporated with other layered materials, are promising for nanoelectronics. The stacking of two model Dirac materials, graphene and topological insulator, can considerably…

介观与纳米尺度物理 · 物理学 2016-03-24 Liang Zhang , Yuan Yan , Han-Chun Wu , Dapeng Yu , Zhi-Min Liao

Graphene/silicon heterostructures have attracted tremendous interest as a new platform for diverse electronic and photonic devices such as barristors, solar cells, optical modulators, and chemical sensors. The studies to date largely focus…

We theoretically study the electronic and transport properties of two graphene layers vertically coupled by an insulating layer under the influence of a time-periodic external light field. The non-adiabatic driving induces excitations of…

介观与纳米尺度物理 · 物理学 2020-06-11 Pascal Stadler , Tomas Löfwander , Mikael Fogelström

Vertical tunneling field-effect-transistor (FET) based on graphene heterojunctions with layers of hBN is simulated by self-consistent quantum transport simulations. It is found that the asymmetric p-type and n-type conduction is due to work…

介观与纳米尺度物理 · 物理学 2015-06-05 S. Bala Kumar , Gyungseon Seol , Jing Guo

The high carrier mobility in graphene promises its utility in electronics applications. Azobenzene is a widely studied organic molecule for switchable optoelectronic devices that can be synthesized with a wide variety of ligands and…

材料科学 · 物理学 2015-06-18 Jonathan Trinastic , Hai-Ping Cheng

We conduct experimental studies on the electrical transport properties of monolayer graphene directly covered by a few layers of $\rm CrI_3$. We do not observe the expected magnetic exchange coupling in the graphene but instead discover…

We performed detailed studies of the current-voltage characteristics in graphene/MoS2/metal vertical field-effect transistors. Owing to its low density of states, the Fermi level in graphene is very sensitive to its carrier density and thus…

介观与纳米尺度物理 · 物理学 2015-06-03 Rai Moriya , Takehiro Yamaguchi , Yoshihisa Inoue , Yohta Sata , Sei Morikawa , Satoru Masubuchi , Tomoki Machida

Graphene electrodes provide a suitable alternative to metal contacts in molecular conduction nanojunctions. Here, we propose to use graphene electrodes as a platform for effective photon assisted tunneling through molecular conduction…

介观与纳米尺度物理 · 物理学 2015-06-17 Boris Fainberg

We present a comparative study of high carrier density transport in mono-, bi-, and trilayer graphene using electric-double-layer transistors to continuously tune the carrier density up to values exceeding 10^{14} cm^{-2}. Whereas in…

介观与纳米尺度物理 · 物理学 2016-07-13 J. T. Ye , M. F. Craciun , M. Koshino , S. Russo , S. Inoue , H. T. Yuan , H. Shimotani , A. F. Morpurgo , Y. Iwasa

Interband transitions of electrons in a gapped graphene monolayer are highly stimulated near the Fermi surface when a high-frequency electric wave of weak intensity and a strong constant electric field are superposed in the plane of the…

介观与纳米尺度物理 · 物理学 2024-03-21 Selym Villalba-Chávez , Oliver Mathiak , Reinhold Egger , Carsten Müller

We investigate from first-principles the change in transport properties of a two-dimensional azobenzene monolayer sandwiched between two Au electrodes that undergoes molecular switching. We focus on transport differences between a…

介观与纳米尺度物理 · 物理学 2012-08-07 Yan Wang , Hai-Ping Cheng

Solid-liquid phase transitions are fundamental physical processes, but atomically-resolved microscopy has yet to capture both the solid and liquid dynamics for such a transition. We have developed a new technique for controlling the melting…

Vertical graphene heterostructures have been introduced as an alternative architecture for electronic devices by using quantum tunneling. Here, we present that the current on/off ratio of vertical graphene field-effect transistors is…

介观与纳米尺度物理 · 物理学 2013-09-30 Nojoon Myoung , Kyungchul Seo , Seung Joo Lee , Gukhyung Ihm

Graphene-insulator-graphene vertical tunneling structures are discussed from a theoretical perspective. Momentum conservation in such devices leads to highly nonlinear current-voltage characteristics, which with gates on the tunnel junction…

介观与纳米尺度物理 · 物理学 2023-05-03 S. C. de la Barrera , Qin Gao , R. M. Feenstra

We improvise a novel approach to carry out first-principles simulations of graphene-based vertical field effect tunneling transistors that consist of a graphene$|${\it h}-BN$|$graphene multilayer structure. Within the density functional…

材料科学 · 物理学 2015-04-15 Yun-Peng Wang , Hai-Ping Cheng

Graphene-oxide hybrid structures offer the opportunity to combine the versatile functionalities of oxides with the excellent electronic transport in graphene. Understanding and controlling how the dielectric environment affects the…

介观与纳米尺度物理 · 物理学 2012-07-26 X. Hong , K. Zou , A. M. DaSilva , C. H. Ahn , J. Zhu

High quality epitaxial graphene films can be applied as templates for tailoring graphene-substrate interfaces that allow for precise control of the charge carrier behavior in graphene through doping and many-body effects. By combining…

The celebrated electronic properties of graphene have opened way for materials just one-atom-thick to be used in the post-silicon electronic era. An important milestone was the creation of heterostructures based on graphene and other…

The spatial arrangement of adsorbates deposited onto a clean surface in vacuum typically cannot be reversibly tuned. Here we use scanning tunneling microscopy to demonstrate that molecules deposited onto graphene field-effect transistors…

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