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Active modulation of quantum dot thin film photoluminescence (PL) has far-reaching potential applications in biomedical and optoelectronic systems, but challenges remain in achieving large PL modulation depth and fast temporal response.…

应用物理 · 物理学 2024-06-19 Sihan Xie , Han Zhu , Melissa Li , Vladimir Bulović

Field-effect transistors (FETs) predominantly utilize electrons for signal processing in modern electronics. In contrast, phonon-based field-effect transistors (PFETs)-which employ phonons for active thermal management-remain markedly…

计算物理 · 物理学 2025-08-05 H. F. Feng , Z. Y. Xu , B. Liu , Zhi-Xin Guo

Organic photoswitchable molecules have struggled in solid state form to fulfill their remarkable potential, in terms of photoswitching performance and long-term stability when compared to their inorganic counterparts. We report the concept…

We show that ordered monolayers of organic molecules stabilized by hydrogen bonding on the surface of exfoliated few-layer hexagonal boron nitride (hBN) flakes may be incorporated into van der Waals heterostructures with integral few-layer…

High-performance $n$-type organic field-effect transistors were developed with ionic-liquid gates and N,N$^"$-bis(n-alkyl)-(1,7 and 1,6)-dicyanoperylene-3,4:9,10-bis(dicarboximide)s single-crystals. Transport measurements show that these…

材料科学 · 物理学 2015-05-20 S. Ono , N. Minder , Z. Chen , A. Facchetti , A. F. Morpurgo

We propose and analyze a novel dual-gate Spin Field Effect Transistor (SpinFET) with half-metallic ferromagnetic source and drain contacts. The transistor has two gate pads that can be biased independently. It can be switched ON or OFF with…

介观与纳米尺度物理 · 物理学 2009-11-13 J. Wan , M. Cahay , S. Bandyopadhyay

In this paper, we propose a plasmon-induced transparency (PIT) metamaterial structure composed of Ag nanomaterials with polarization sensitivity. The metamaterial model consists of three bright modes with different resonant frequencies. The…

光学 · 物理学 2023-12-21 Ke Di , Meng Xie , Zhaoyang Wang , Renpu Li , Yu Liu , Jiajia Du

Gate tunable p-type multilayer tin mono-sulfide (SnS) field-effect transistor (FET) devices with SnS thickness between 50 and 100 nm were fabricated and studied to understand their performances. The devices showed anisotropic inplane…

Two-dimensional (2D) materials are a new type of materials under intense study because of their interesting physical properties and wide range of potential applications from nanoelectronics to sensing and photonics. Monolayers of…

Single-Wall Carbon Nanotubes (SWNTs) are among the very few candidates for single-photon sources operating in the telecom bands since they exhibit large photon antibunching up to room temperature. However, coupling a nanotube to a photonic…

Molecular level components, like carbon multiwalled nanotubes (MWNT), show great potential for future nanoelectronics. At low frequencies, only the outermost carbon layer determines the transport properties of the MWNT. Due to the…

介观与纳米尺度物理 · 物理学 2007-05-23 Markus Ahlskog , Pertti Hakonen , Mikko Paalanen , Leif Roschier , Reeta Tarkiainen

The continued evolution of CMOS technology demands materials and architectures that emphasize low power consumption, particularly for computations involving large scale data processing and multivariable optimization. Ferroelectric materials…

The electrostatic coupling between singled-walled carbon nanotube (SWNT) networks/arrays and planar gate electrodes in thin-film transistors (TFTs) is analyzed both in the quantum limit with an analytical model and in the classical limit…

材料科学 · 物理学 2010-01-12 Qing Cao , Minggang Xia , Coskun Kocabas , Moonsub Shim , John A. Rogers , Slava V. Rotkin

We demonstrate high yield fabrication of field effect transistors (FET) using chemically reduced graphene oxide (RGO) sheets suspended in water assembled via dielectrophoresis. The two terminal resistances of the devices were improved by an…

介观与纳米尺度物理 · 物理学 2015-05-18 Daeha Joung , A. Chunder , Lei Zhai , Saiful I. Khondaker

Molecule-based devices are envisioned to complement silicon devices by providing new functions or already existing functions at a simpler process level and at a lower cost by virtue of their self-organization capabilities. Moreover, they…

介观与纳米尺度物理 · 物理学 2010-02-04 F. Alibart , S. Pleutin , D. Guerin , C. Novembre , S. Lenfant , K. Lmimouni , C. Gamrat , D. Vuillaume

The development of next generation medicines demand more sensitive and reliable label free sensing able to cope with increasing needs of multiplexing and shorter times to results. Field effect transistor-based biosensors emerge as one of…

应用物理 · 物理学 2019-05-22 Serena Rollo , Dipti Rani , Renaud Leturcq , Wouter Olthuis , César Pascual García

Despite the great promise of carbon nanotube field effect transistors (CNT FETs) for applications in chemical and biochemical detection, a quantitative understanding of sensor responses is lacking. To explore the role of electrostatics in…

Silicon nanochannel field effect transistor (FET) biosensors are one of the most promising technologies in the development of highly sensitive and label-free analyte detection for cancer diagnostics. With their exceptional electrical…

We have fabricated air-stable n-type, ambipolar carbon nanotube field effect transistors (CNFETs), and used them in nanoscale memory cells. N-type transistors are achieved by annealing of nanotubes in hydrogen gas and contacting them by…

介观与纳米尺度物理 · 物理学 2015-06-24 M. Radosavljevic , M. Freitag , K. V. Thadani , A. T. Johnson

Kinetic inductance in thin film superconductors has been used as the basis for low-temperature, low-noise photon detectors. In particular thin films such as NbTiN, TiN, NbN, the kinetic inductance effect is strongly non-linear in the…

天体物理仪器与方法 · 物理学 2020-07-15 R. Basu Thakur , N. Klimovich , P. K . Day , E. Shirokoff , P. D. Mauskopf , F. Faramarzi , P. S. Barry
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