相关论文: Current-induced effective magnetic field in a half…

The efficient generation of spin currents and spin torques via spin-orbit coupling is an important goal of spintronics research. One crucial metric for spin current generation is the spin Hall angle, which is the ratio of the spin Hall…

The transverse resistivity in thin films of La(0.84)Sr(0.16)MnO(3) (LSMO)exhibits sharp field-symmetric jumps below Tc. We show that a likely source of this behavior is the giant planar Hall effect (GPHE) combined with biaxial magnetic…

We have investigated the effect of electric field control on the magnetization and the transport properties in La0.7Ca0.3MnO3 (LCMO) ultrathin film (~10 nm) by using it as the semiconductor channel material of a prototypical field effect…

Colossal magnetoresistive (CMR) La$_{0.7}$Sr$_{0.3}$MnO$_{3}$ (LSMO) thin films have been grown under tensile strains on (100)-SrTiO$_{3}$ substrates and compressive strains on (100)-LaAlO$_{3}$ and (110)-NdGaO$_{3}$ substrates by pulsed…

We demonstrate current-induced displacement of ferromagnetic domain walls in sub-micrometer fabricated patterns of SrRuO3 films. The displacement, monitored by measuring the extraordinary Hall effect, is induced at zero applied magnetic…

We estimate the strength of current-induced magnetic field (CIMF) in the two-dimensional slab geometry for Spin Hall Effect (SHE) observed recently by Kato et al. and Wunderlich et al. and show that if the factor gm^*/m, where g is the…

An insulator to metal transition below 240K is induced by applying a 7T magnetic field in Pr0.5Ca0.5MnO3 thin films grown by the Pulsed Laser Deposition technique on (100) SrTiO3 substrates. This value of the melting magnetic field, much…

We present the observation of a transverse thermopower, or Planar Nernst Effect, in patterned ultrathin film (8 nm) of La0.7Sr0.3MnO3 (LSMO) driven by heat current applied in-plane of the film and Planar Hall Effect (PHE) in the same LSMO…

Electrical switching of N\'eel order in an antiferromagnetic insulator is desirable as a basis for memory applications. Unlike electrically-driven switching of ferromagnetic order via spin-orbit torques, electrical switching of…

Bulk magnetization in Pr_{0.6}Ca_{0.4}MnO_3 thin films with tensile (SrTiO_3) and compressive (LaAlO_3) substrate-induced strain is compared to the magnetooptical Kerr effect (MOKE) measurements. In the absence of an external magnetic…

This study reports the magnetization switching induced by spin-orbit torque (SOT) from the spin current generated in Co2MnGa magnetic Weyl semimetal (WSM) thin films. We deposited epitaxial Co2MnGa thin films with highly B2-ordered…

Thin films of Pr0.5Ca0.5MnO3 manganites exhibiting charge/orbital-ordered properties with colossal magnetoresistance have been synthesized by the pulsed laser deposition technique on both (100)-SrTiO3 and (100)-LaAlO3 substrates. The…

Ferromagnetic insulating La$_2$CoMnO$_{6-\epsilon}$ (LCMO) epitaxial thin films grown on top of SrTiO$_3$ (001) substrates presents a strong magnetic anisotropy favoring the out of plane orientation of the magnetization with a strong…

We find that the Hall effect resistivity ($\rho_{xy}$) of thin films of \lsmo\ varies as a function of the angle $\theta$ between the applied magnetic field and the film normal as $\rho_{xy}=a\cos \theta + b\cos 3\theta$, where $|b|$…

Systematic transport measurements have been performed on a series of La0.67Ca0.33MnO3 (LCMO) thin films with varying degrees of anisotropic strain. The strain is induced via epitaxial growth on NdGaO3(001) substrates and varied by…

SrMnO$_{3}$ (SMO) is a magnetic insulator and predicted to exhibit a multiferroic phase upon straining. Strained films of SMO display a wide range of magnetic orders, ranging from G-type to C-and A-type, indicative of competing magnetic…

The flow of in-plane current through ultrathin magnetic heterostructures can cause magnetization switching or domain wall nucleation owing to bulk and interfacial effects. Within the magnetic layer, the current can create magnetic…

Pulsed current-induced magnetization reversal is investigated in the layer of (Ga,Mn)(Bi,As) dilute ferromagnetic semiconductor (DFS) epitaxially grown under tensile misfit strain causing perpendicular magnetic anisotropy in the layer. The…

Magnetic properties of La$_{1-x}$Sr$_x$MnO$_{3}$ (LSMO) are highly sensitive to various factors such as the Sr doping level $x$, lattice strain, and oxygen stoichiometry due to the strongly correlated nature of $3d$ electrons. For the…

The strongly correlated material La0.7Sr0.3MnO3 (LSMO) exhibits metal-to-insulator and magnetic transition near room temperature. Although the physical properties of LSMO can be manipulated by strain, chemical doping, temperature, or…