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$^{13}$C nuclear magnetic resonance measurements were performed for a single-component molecular material Zn(tmdt)$_{2}$, in which tmdt's form an arrangement similar to the so-called ${\kappa}$-type molecular packing in…

强关联电子 · 物理学 2017-08-02 Rina Takagi , Hiro Gangi , Kazuya Miyagawa , Biao Zhou , Akiko Kobayashi , Kazushi Kanoda

We investigate how the antiferromagnetic Mott insulator evolves into the d-wave BCS superconductor through hole doping. Allowing spin fluctuations in the strong coupling approach, we find a spin-gapped incoherent metal with preformed…

强关联电子 · 物理学 2009-11-13 Ki-Seok Kim , Mun Dae Kim

We report the band structure calculations and the experimental results of resistivity and magnetic susceptibility in a spin-1/2 (BEDT-TTF)$^{\bullet +}$ monomer Mott insulator (BEDT-TTF)Cu[N(CN)$_2$]$_2$. The band calculations indicate a…

强关联电子 · 物理学 2022-10-24 N. Yoneyama , M. K. Nuryadin , T. Tsumuraya , S. Iguchi , T. Takei , N. Kumada , M. Nagao , I. Tanaka , T. Sasaki

This article contains a theoretical overview of the physical properties of antiferromagnetic Mott insulators in spatial dimensions greater than one. Many such materials have been experimentally studied in the past decade and a half, and we…

强关联电子 · 物理学 2009-11-10 Subir Sachdev

The layered organic compounds, kappa-(BEDT-TTF)_2Cu[N(CN)_2X (X=Cl, Br) are metals at ambient temperatures. At low temperatures, the Cl compound is a weakly ferromagnetic Mott insulator while the isostructural Br compound is a…

强关联电子 · 物理学 2009-11-13 Agnes Antal , Titusz Feher , Andras Janossy , Erzsebet Tatrai-Szekeres , Ferenc Fulop

The magnetic state of the single-component molecular compound, [Cu(tmdt)$_{2}$], is investigated by means of $^{1}$H-NMR. An abrupt spectral broadening below 13 K and a sharp peak in nuclear spin-lattice relaxation rate, $T_{1}^{-1}$, at 13…

强关联电子 · 物理学 2012-05-31 Rina Takagi , Kazuya Miyagawa , Kazushi Kanoda , Biao Zhou , Akiko Kobayashi , Hayao Kobayashi

We report on a new electromagnetic phenomenon that emerges in Mott insulators, i.e., materials that do not conduct electricity because of strong electronic Coulomb repulsion. The phenomenon manifests as antiferromagnetic ordering due to…

强关联电子 · 物理学 2015-05-13 K. A. Al-Hassanieh , C. D. Batista , G. Ortiz , L. N. Bulaevskii

Motivated by the realization of spin-valley Hubbard on triangular moir\'e superlattice in ABC trilayer graphene aligned with hexagon boron nitride (hBN) and possibly also in twisted transition metal dichalcogenide homobilayers, we study…

强关联电子 · 物理学 2020-01-22 Ya-Hui Zhang , Dan Mao

We present a comprehensive study of the spin excitations - as measured by the dynamical spin structure factor $S(q,\omega)$ - of the so-called block-magnetic state of low-dimensional orbital-selective Mott insulators. We realize this state…

强关联电子 · 物理学 2020-09-17 J. Herbrych , G. Alvarez , A. Moreo , E. Dagotto

We study the interplay of strong electron correlations and intra-triangle spin exchange at two-thirds filling of the single-orbital Hubbard model on the decorated honeycomb lattice using rotationally invariant slave bosons. We find that the…

强关联电子 · 物理学 2021-08-06 H. L. Nourse , Ross H. McKenzie , B. J. Powell

Surprising properties of doped Mott insulators are at the heart of many quantum materials, including transition metal oxides and organic materials. The key to unraveling complex phenomena observed in these systems lies in understanding the…

强关联电子 · 物理学 2018-12-05 Fabian Grusdt , Zheng Zhu , Tao Shi , Eugene Demler

Motivated by the recent activities on the Ni-based diamond lattice antiferromagnet NiRh$_2$O$_4$, we theoretically explore on a general ground the unique spin and orbital physics for the Ni$^{2+}$ ions with a $3d^8$ electron configuration…

强关联电子 · 物理学 2019-07-10 Fei-Ye Li , Gang Chen

We present here a study of the magnetic properties of the antiferromagnetic dimer material CuVOF$_4$(H$_2$O)$_6\cdot$H$_2$O, in which the dimer unit is composed of two different $S = 1/2$ species, Cu(II) and V(IV). An applied magnetic field…

Triangular lattice quasi-two-dimensional Mott insulators based on BEDT-TTF molecule and its analogies present a possibility to produce exotic phases by coupling charge and spin degrees of freedom. In this work we discuss magnetic properties…

Magnetic structures of organic Mott insulators X[Pd(dmit)2]2 (X=Me4P, Me4Sb), of which electronic states are located near quantum spin liquid (X=EtMe3Sb), are demonstrated by 13C NMR. Antiferromagnetic spectra and nuclear relaxations show…

强关联电子 · 物理学 2019-05-01 Shigeki Fujiyama , Reizo Kato

Two-dimensional Mott insulators host antiferromagnetic (AFM) correlations that are predicted to enhance the attractive interaction between empty (holons) and doubly occupied (doublons) sites, creating a novel pathway for exciton formation.…

强关联电子 · 物理学 2025-05-12 Omar Mehio , Yuchen Han , Xinwei Li , Honglie Ning , Zach Porter , Stephen D. Wilson , David Hsieh

We study the problem of designing an artificial Mott insulator in a correlated oxide heterostructure. We consider the extreme limit of quantum confinement based on ionic discontinuity doping, and argue that a unique dimer Mott insulator can…

强关联电子 · 物理学 2013-04-30 Ru Chen , SungBin Lee , Leon Balents

Itinerant spin polaron and metallic ferromagnetism are theoretically predicted in the Mott insulator in semiconductor moir\'e superlattices doped below and above half filling of the narrow moir\'e band, respectively. The existence of spin…

强关联电子 · 物理学 2023-07-05 Margarita Davydova , Yang Zhang , Liang Fu

Motivated by recent experiments of a novel 5$d$ Mott insulator in Sr$_2$IrO$_4$, we have studied the two-dimensional three-orbital Hubbard model with a spin-orbit coupling $\lambda$. The variational Monte Carlo method is used to obtain the…

强关联电子 · 物理学 2010-11-25 Hiroshi Watanabe , Tomonori Shirakawa , Seiji Yunoki

The electronic properties of Mott insulators realized in (111) bilayers of perovskite transition-metal oxides are studied. The low-energy effective Hamiltonians for such Mott insulators are derived in the presence of a strong spin-orbit…

强关联电子 · 物理学 2015-06-11 Satoshi Okamoto
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