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Black phosphorous (BP) is is recently unveiled as a promising two-dimensional direct bandgap semiconducting material. Here, we report the ambipolar field effect transistor behavior of multilayers of BP with ferromagnetic tunnel contacts. We…

介观与纳米尺度物理 · 物理学 2014-07-07 M. Venkata Kamalakar , B. N Madhushankar , André Dankert , Saroj P. Dash

Two-dimensional crystals are emerging materials for nanoelectronics. Development of the field requires candidate systems with both a high carrier mobility and, in contrast to graphene, a sufficiently large electronic bandgap. Here we…

材料科学 · 物理学 2014-07-08 Jingsi Qiao , Xianghua Kong , Zhi-Xin Hu , Feng Yang , Wei Ji

Negative compressibility generated by many-body effects in 2D electronic systems can enhance gate capacitance. We observe capacitance enhancement in a newly emerged 2D layered material, atomically thin black phosphorus (BP). The…

介观与纳米尺度物理 · 物理学 2016-04-05 Yingying Wu , Xiaolong Chen , Zefei Wu , Shuigang Xu , Tianyi Han , Jiangxiazi Lin , Yuan Cai , Yuheng He , Chun Cheng , Ning Wang

Surface resonance states are electronic states localized near the surface while remaining hybridized with bulk bands. These states can strongly modify the electric-field response of semiconductors. Here, we demonstrate using scanning…

介观与纳米尺度物理 · 物理学 2026-03-03 Dongming Zhao , Byeongin Lee , Junho Bang , Claudia Felser , Jian-Feng Ge , Doohee Cho

We report the anisotropic magneto-transport measurement on a non-compound band semiconductor black phosphorus (BP) with magnetic field B up to 16 Tesla applied in both perpendicular and parallel to electric current I under hydrostatic…

Recent experimental measurements of light absorption in few-layer black phosphorus (BP) reveal a series of high and sharp peaks, interspersed by pairs of lower and broader features. Here, we propose a theoretical model for these excitonic…

介观与纳米尺度物理 · 物理学 2021-05-12 A. Chaves , G. O. Sousa , K. Khaliji , D. R. da Costa , G. A. Farias , Tony Low

Two-dimensional materials with strong bandstructure anisotropy such as black phosphorus BP have been identified as attractive candidates for logic application due to their potential high carrier velocity and large density-of-states.…

计算物理 · 物理学 2021-10-28 Cedric Klinkert , Sara Fiore , Jonathan Backmann , Youseung Lee , Mathieu Luisier

In this paper, we develop an analytic physics-based model to describe current conduction in ultra-thin black phosphorus (BP) field-effect transistors (FETs). The model extends the concept of virtual source charge calculation to capture the…

应用物理 · 物理学 2019-05-22 Elahe Yarmoghaddam , Nazila Haratipour , Steven J. Koester , Shaloo Rakheja

As an emerging single elemental layered material with a low symmetry in-plane crystal lattice, black phosphorus (BP) has attracted significant research interest owing to its unique electronic and optoelectronic properties, including its…

We report analytic results on quantum capacitance (C$_{q}$) measurements and their optical tuning in dual-gated device with potassium-doped multi-layered black phosphorous (BP) as the channel material. The two-dimensional (2D) layered BP is…

材料科学 · 物理学 2017-08-09 Parijat Sengupta , Shaloo Rakheja

Black phosphorus (BP) exhibits highly anisotropic properties and dynamical behavior that are unique even among two-dimensional and van der Waals (vdW) layered materials. Here, we show that an interlayer lattice contraction and concerted,…

介观与纳米尺度物理 · 物理学 2022-07-27 Mazhar Chebl , Xing He , Ding-Shyue Yang

Phosphorene and its components are highly reactive to oxygen when exposed to ambient conditions due to the presence of lone pairs of electrons on phosphorus atoms. Functionalization serves as a solution to prevent the chemical degradation…

We induce surface carrier densities up to $\sim7\cdot 10^{14}$cm$^{-2}$ in few-layer graphene devices by electric double layer gating with a polymeric electrolyte. In 3-, 4- and 5-layer graphene below 20-30K we observe a logarithmic upturn…

介观与纳米尺度物理 · 物理学 2018-02-21 R. S. Gonnelli , E. Piatti , A. Sola , M. Tortello , F. Dolcini , S. Galasso , J. R. Nair , C. Gerbaldi , E. Cappelluti , M. Bruna , A. C. Ferrari

Ballistic device performance of monolayer black phosphorous (BP) field-effect transistors (FET) is investigated in this work. Due to the anisotropic effect mass of the carriers, the ON-state current is dependent on the transport direction.…

材料科学 · 物理学 2014-07-14 Kai-Tak Lam , Zhipeng Dong , Jing Guo

We study the environmental instability of mechanically exfoliated few-layer black phosphorus (BP). From continuous measurements of flake topography over several days, we observe an increase of over 200% in volume due to the condensation of…

The environmental stability of the layered semiconductor black phosphorus (bP) remains a challenge. Passivation of the bP surface with phosphorus oxide, POx, grown by a reactive ion etch with oxygen plasma is known to improve…

介观与纳米尺度物理 · 物理学 2018-04-30 W. Dickerson , V. Tayari , I. Fakih , A. Korinek , M. Caporali , M. Serrano-Ruiz , M. Peruzzini , S. Heun , G. A. Botton , T. Szkopek

Tuning band gaps in two-dimensional (2D) materials is of great interest in the fundamental and practical aspects of contemporary material sciences. Recently, black phosphorus (BP) consisting of stacked layers of phosphorene was…

材料科学 · 物理学 2017-09-13 Sun-Woo Kim , Hyun Jung , Hyun-Jung Kim , Jin-Ho Choi , Su-Huai Wei , Jun-Hyung Cho

We report ambipolar transport properties in black phosphorus using an electric-double-layer transistor (EDLT) configuration. The transfer curve clearly exhibits ambipolar transistor behavior with an ON-OFF ratio of 5*10^3. The band gap was…

材料科学 · 物理学 2015-05-20 Yu Saito , Yoshihiro Iwasa

We present a monolayer black phosphorus (BP)-based metamaterial structure for tunable anisotropic absorption in the mid-infrared. Based on the critical coupling mechanism of guided resonance, the structure realizes the high absorption…

光学 · 物理学 2020-01-01 Tingting Liu , Xiaoyun Jiang , Huaixing Wang , Yong Liu , Chaobiao Zhou , Shuyuan Xiao

Black phosphorus (BP) tunneling transistors (TFETs) using heterojunction (He) are investigated by atomistic quantum transport simulations. It is observed that edge states have a great impact on transport characteristics of BP He-TFETs,…

介观与纳米尺度物理 · 物理学 2019-09-04 Fei Liu , Jian Wang , Hong Guo