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Engineering of cooling mechanism is of primary importance for the development of nanoelectronics. Whereas radiation cooling is rather inefficient in nowadays electronic devices, the strong anisotropy of 2D materials allows for enhanced…

介观与纳米尺度物理 · 物理学 2019-10-11 E. Baudin , C. Voisin , B. Placais

Fast carrier cooling is important for high power graphene based devices. Strongly Coupled Optical Phonons (SCOPs) play a major role in the relaxation of photoexcited carriers in graphene. Heterostructures of graphene and hexagonal boron…

介观与纳米尺度物理 · 物理学 2017-04-21 Dheeraj Golla , Alexandra Brasington , Brian J. LeRoy , Arvinder Sandhu

The substrate material of monolayer graphene influences the charge carrier mobility by various mechanisms. At room temperature, the scattering of conduction electrons by phonon modes localized at the substrate surface can severely limit the…

材料科学 · 物理学 2012-05-14 Jürgen Schiefele , Fernando Sols , Francisco Guinea

The thermoelectric properties of in plane heterostructures made of Graphene and hexagonal Boron Nitride (BN) have been investigated by means of atomistic simulation. The heterostructures consist in armchair graphene nanoribbons to the sides…

介观与纳米尺度物理 · 物理学 2015-08-19 Van-Truong Tran , Jérôme Saint Martin , Philippe Dollfus

Hexagonal boron-nitride (h-BN) provides an ideal substrate for supporting graphene devices to achieve fascinating transport properties, such as Klein tunneling, electron optics and other novel quantum transport phenomena. However,…

介观与纳米尺度物理 · 物理学 2024-02-13 Viet-Anh Tran , Viet-Hung Nguyen , Jean-Christophe Charlier

Graphene field-effect transistors are fabricated utilizing single-crystal hexagonal boron nitride (h-BN), an insulating isomorph of graphene, as the gate dielectric. The devices exhibit mobility values exceeding 10,000 cm2/V-sec and current…

介观与纳米尺度物理 · 物理学 2016-11-18 I. Meric , C. R. Dean , A. F. Young , J. Hone , P. Kim , K. L. Shepard

Being used in optoelectronic devices as ultra-thin conductor-insulator junctions, detailed investigations are needed about how exactly h-BN and graphene hybridize. Here, we present a comprehensive ab initio study of hot carrier dynamics…

介观与纳米尺度物理 · 物理学 2022-07-01 Sangkha Borah , Dinesh Yadav , Maxim Trushin , Fabian Pauly

We investigate the electronic properties of heterostructures based on ultrathin hexagonal boron nitride (h-BN) crystalline layers sandwiched between two layers of graphene as well as other conducting materials (graphite, gold). The tunnel…

Increased power density in modern microelectronics has led to thermal management challenges which can cause degradation in performance and reliability. In many high-power electronic devices, the power consumption and heat removal are…

介观与纳米尺度物理 · 物理学 2019-10-01 David B. Brown , Thomas L. Bougher , Xiang Zhang , Pulickel Ajayan , Baratunde A. Cola , Satish Kumar

Atomically thin monolayers of graphene show excellent electronic properties which have led to a great deal of research on their use in nanoscale devices. However, heat management of such nanoscale devices is essential in order to improve…

Hexagonal boron nitride (hBN) is a natural hyperbolic material which can also accommodate highly dispersive surface phonon-polariton modes. In this paper, we examine theoretically the mid-infrared optical properties of graphene-hBN…

光学 · 物理学 2015-07-03 Anshuman Kumar , Tony Low , Kin Hung Fung , Phaedon Avouris , Nicholas X. Fang

Graphene/hexagonal boron nitride (hBN) heterostructures represent a promising class of metal-insulator-semiconductor systems widely explored for multifunctional digital device applications. In this work, we demonstrate that graphene, when…

介观与纳米尺度物理 · 物理学 2025-05-28 A. Belayadi , C. I. Osuala , I. Assi , A. Naif , J. P. F. LeBlanc , A. Abbout

Light properties in the mid-infrared can be controlled at a deep subwavelength scale using hyperbolic phonons-polaritons (HPPs) of hexagonal boron nitride (h-BN). While propagating as waveguided modes HPPs can concentrate the electric field…

We study the radiative heat transfer between multilayer structures made by a periodic repetition of a graphene sheet and a hexagonal boron nitride (hBN) slab. Surface plasmons in a monolayer graphene can couple with a hyperbolic phonon…

光学 · 物理学 2017-07-05 Bo Zhao , Brahim Guizal , Zhuomin M. Zhang , Shanhui Fan , Mauro Antezza

The quality of graphene in nanodevices has increased hugely thanks to the use of hexagonal boron nitride as a supporting layer. This paper studies to which extent hBN together with channel length scaling can be exploited in graphene field…

Graphene on hexagonal boron-nitride (h-BN) is an atomically flat conducting system that is ideally suited for probing the effect of Zeeman splitting on electron transport. We demonstrate by magneto-transport measurements that a parallel…

介观与纳米尺度物理 · 物理学 2016-08-24 F. Chiappini , S. Wiedmann , M. Titov , A. K. Geim , R. V. Gorbachev , E. Khestanova , A. Mishchenko , K. S. Novoselov , J. C. Maan , U. Zeitler

The van der Waals heterostructures of two-dimensional (2D) atomic crystals constitute a new paradigm in nanoscience. Hybrid devices of graphene with insulating 2D hexagonal boron nitride (h-BN) have emerged as promising nanoelectronic…

介观与纳米尺度物理 · 物理学 2014-06-24 M. Venkata Kamalakar , André Dankert , Johan Bergsten , Tommy Ive , Saroj P. Dash

Hexagonal boron nitride (BN), one of the very few layered insulators, plays a crucial role in 2D materials research. In particular, BN grown with a high pressure technique has proven to be an excellent substrate material for graphene and…

介观与纳米尺度物理 · 物理学 2020-06-19 J. Sonntag , J. Li , A. Plaud , A. Loiseau , J. Barjon , J. H. Edgar , C. Stampfer

We study fully hexagonal boron nitride (hBN)-encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes; thick-hBN flake as a bottom gate…

介观与纳米尺度物理 · 物理学 2016-04-01 M. Gurram , S. Omar , S. Zihlmann , P. Makk , C. Schönenberger , B. J. van Wees

We design a hybrid graphene/hexagonal boron nitride superlattice monolayer and investigate its thermoelectric properties using density functional theory and Boltzmann transport equations with the relaxation time accurately treated by…

材料科学 · 物理学 2019-05-31 Zizhen Zhou , Huijun Liu , Dengdong Fan , Guohua Cao
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