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相关论文: The anisotropic ultrahigh hole mobility in strain-…

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Two-dimensional electron systems (2DESs) confined to the surface of narrowband semiconductors have attracted great interest since they can easily integrate with superconductivity (or ferromagnetism) enabling new possibilities in hybrid…

介观与纳米尺度物理 · 物理学 2019-01-10 Kaushini Wickramasinghe , William Mayer , Joseph Yuan , Tri Nguyen , Lucy Jiao , Vladimir Manucharyan , Javad Shabani

Tailoring magnetoresistance and magnetic anisotropy in van der Waals magnetic materials is essential for advancing their integration into technological applications. In this regard, strain engineering has emerged as a powerful and versatile…

Charge transport in MoS2 in the low carrier density regime is dominated by trap states and band edge disorder. The intrinsic transport properties of MoS2 emerge in the high density regime where conduction occurs via extended states. Here,…

介观与纳米尺度物理 · 物理学 2014-12-08 Leiqiang Chu , Hennrik Schmidt , Jiang Pu , Shunfeng Wang , Barbaros Özyilmaz , Taishi Takenobu , Goki Eda

Two dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDC) have received extensive research interests and investigations in the past decade. In this research, we report the first experimental measurement of…

材料科学 · 物理学 2024-12-10 Jun Liu , Mengqi Fang , Eui-Hyeok Yang , Xian Zhang

Monolayer WSe2 is a two dimensional (2D) semiconductor with a direct bandgap, and it has been recently explored as a promising material for electronics and optoelectronics. Low field effect mobility is the main constraint preventing WSe2…

Various two-dimensional (2D) materials with graphene-like buckled structure emerge, and the $\beta$-phase AsP monolayer has been recently proposed to be thermodynamically stable from first-principles calculations. The studies of thermal…

材料科学 · 物理学 2018-07-04 San-Dong Guo

We systematically study the effect of high pressure on the structure, electronic structure and transport properties of 2H-MoS$_2$, based on first-principles density functional calculations and the Boltzmann transport theory. Our calculation…

材料科学 · 物理学 2013-09-18 Huaihong Guo , Teng Yang , Peng Tao , Yong Wang , Zhidong Zhang

Tuning the ambipolar behavior in charge carrier transport via defect-engineering is crucial for achieving high mobility transistors for nonlinear logic circuits. Here, we present the electric-field tunable electron and hole transport in a…

Here, we have identified the monolayer phase of Bi2O2Se as a promising two-dimensional semiconductor with ultra-high carrier mobility and giant electric polarization. Due to the strong reconstruction originated from the interlayer…

Using first principles density functional theory calculations, we show a semimetal to semiconducting electronic phase transition for bulk TiS 2 by applying uniform biaxial tensile strain. This electronic phase transition is triggered by…

材料科学 · 物理学 2015-06-23 Atanu Samanta , Tribhuwan Pandey , Abhishek K. Singh

On the basis of detailed first-principles calculations the anisotropic thermoelectric transport properties of biaxially strained silicon were studied with focus on a possible enhancement of the powerfactor. Electron as well as hole doping…

材料科学 · 物理学 2011-10-18 Nicki F. Hinsche , Ingrid Mertig , Peter Zahn

We report transport properties of single-crystalline Pd$_{3}$Bi$_{2}$S$_{2}$, which has been predicted to host an unconventional electronic phase of matter beyond three-dimensional Dirac and Weyl semimetals. Similar to several topological…

材料科学 · 物理学 2018-04-27 Shubhankar Roy , Arnab Pariari , Ratnadwip Singha , Biswarup Satpati , Prabhat Mandal

Exciton mobility in two-dimensional semiconductors is a key ingredient in materials-based design of optoelectronic functionalities. Monolayer transition metal dichalcogenides (TMDs) set a good test case, with tightly bound excitons and…

材料科学 · 物理学 2026-02-17 Amir Kleiner , Sivan Refaely-Abramson

Within the framework of the density functional theory, we calculate the electronic structure of $\alpha$-(BEDT-TTF)$_2$I$_3$ at 8K and room temperature at ambient pressure and with uniaxial strain along the $a$- and $b$-axes. We confirm the…

强关联电子 · 物理学 2009-11-11 Hiori Kino , Tsuyoshi Miyazaki

The evolution of the superconducting transition temperature ($T_c$) in FeSe was investigated under in-plane, out-of-plane, and hydrostatic compression. For pressures up to 0.6 GPa, $T_c$ increases regardless of the compression mode,…

超导电性 · 物理学 2026-04-06 Alexy Bertrand , Masaki Mito , Kazuma Nakamura , Mahmoud Abdel-Hafiez

Thermal transport property of homogeneous twisted molybdenum disulfide (MoS$_2$) is investigated using non-equilibrium molecular dynamics simulations with the state-of-art force fields. The simulation results demonstrate that the…

计算物理 · 物理学 2023-10-16 Wenwu Jiang , Ting Liang , Jianbin Xu , Wengen Ouyang

Due to their great potential in electronics, optoelectronics and piezoelectronics, Janus transition metal dichalcogenide (TMD) monolayers have attracted increasing research interest, the MoSSe of which with sandwiched S-Mo-Se structure has…

材料科学 · 物理学 2020-01-08 San-Dong Guo , Xiao-Shu Guo , Ye Deng

The low in-plane symmetry in layered 1T'-ReS$_2$ results in strong band anisotropy, while its manifestation in the electronic properties is challenging to resolve due to the lack of effective approaches for controlling the local current…

介观与纳米尺度物理 · 物理学 2021-09-29 Dawei Li , Shuo Sun , Zhiyong Xiao , Jingfeng Song , Ding-Fu Shao , Evgeny Y. Tsymbal , Stephen Ducharme , Xia Hong

In this study, we calculate the $T$=300 K scattering and thermoelectric transport properties of rhombohedral GeTe using first-principles modeling. The room-temperature phase of GeTe has a layered structure, with cross-plane and in-plane…

材料科学 · 物理学 2019-08-07 Vahid Askarpour , Jesse Maassen

Ultrafast light-matter interactions inspire potential functionalities in picosecond optoelectronic applications. However, achieving directional carrier dynamics in metals remains challenging due to strong carrier scattering within a…

材料科学 · 物理学 2025-02-14 S. G. Jeong , I. H. Choi , S. Lee , J. Y. Oh , S. Nair , J. H. Lee , C. Kim , A. Seo , W. S. Choi , T. Low , J. S. Lee , B. Jalan