相关论文: Low Power SI Class E Power Amplifier and RF Switch…

The objective of this research was to design a 2.4 GHz class AB Power Amplifier, with 0.18 um SMIC CMOS technology by using Cadence software, for health care applications. The ultimate goal for such application is to minimize the trade-offs…

In this work, the designs of a single-stage and 2-stage 2.4 GHz power amplifier (PA) are presented. The proposed PAs have been designed to provide high gain and improved efficiency using harmonic suppression and optimized impedance matching…

This paper describes the design of a differential class-E PA for Bluetooth applications in 0.18um CMOS technology with load mismatch protection and power control features. The breakdown induced by load mismatch can be avoided by attenuating…

This paper presents a transformer-based three- transmission-line (Tline) series Doherty power amplifier (PA) implemented in 65-nm CMOS, targeting broadband K/Ka-band applications. By integrating an impedance-scaling network into the output…

The objective of this research was to design a 0-5 GHz RF SOI switch, with 0.18um power Jazz SOI technology by using Cadence software, for health care applications. This paper introduces the design of a RF switch implemented in shunt-series…

In this article, we present a dual-band 28/38-GHz power amplifier (PA) with inter-band suppression for millimeter-wave 5G communications. The dual-band operation is achieved using a center-tapped transformer network with an extra resonator…

Nanometer scale power amplifiers (PA) at sub-THz suffer from severe parasitic effects that lead to experience limited maximum frequency and reduced power performance at the device transceiver front end. The integrated circuits researchers…

We demonstrate a radio-frequency parametric amplifier that exploits the gate-tunable quantum capacitance of an ultra high mobility two dimensional electron gas (2DEG) in a GaAs heterostructure at cryogenic temperatures. The prototype…

Circuit QED based quantum information processing relies on low noise amplification for signal readout. In the realm of microwave superconducting circuits, this amplification is often achieved via Josephson parametric amplifiers (JPA). In…

In this paper, a two-stage ultra-low-power operational amplifier is designed, and a comparative analysis of the proposed subthreshold complementary amplifier is presented between 180nm, 90nm, and 45nm CMOS technology. The proposed…

Broadband quantum-limited parametric amplifiers (PAs) are essential components in quantum information science and technology. Impedance-engineered resonator-based PAs and traveling-wave PAs are the primary approaches to overcome the…

In wireless communication systems, the nonlinear effect and inefficiency of power amplifier (PA) have posed practical challenges for system designs to achieve high spectral efficiency (SE) and energy efficiency (EE). In this paper, we…

This paper presents a power amplifier designed for Wi-Fi 6E using the 2 um gallium arsenide (GaAs) heterojunction bipolar transistor (HBT) process. By employing third-order inter-modulation signal cancellation, harmonic suppression, and an…

Antennas operating at the high-frequency (HF) band (3-30 MHz) are frequently electrically small due to the large wavelength of electromagnetic waves (10-100 m). However, the bandwidth-efficiency products of passively matched electrically…

The fifth-generation (5G) network faces limitations in supporting emerging applications, such as artificial intelligence (AI), virtual reality (VR) and digital twins. To overcome these confines, sub-Terahertz (sub-THz) and Terahertz (THz)…

This paper develops an inductive power transfer(IPT)system with stable output power based on a Class E/EF inverter. Load-independent design of Class E/EF inverter has recently attracted widespread interest. However, applying this design to…

This paper presents the analysis, design, fabrication, and measurement of an integrated low-noise amplifier (LNA) implemented using a 130 nm CMOS technology, operating in the 2.4 GHz band. The LNA is a crucial component in the performance…

This paper presents the first multiband mm-wave linear Doherty PA in silicon for broadband 5G applications. We introduce a new transformer-based on-chip Doherty power combiner, which can reduce the impedance transformation ratio in power…

In high-performance RF transceivers the thrust of has been on lower noise LNAs and high-power high-speed PAs. The performance trade-off has forced many solutions to have the LNA and PA on a separate die compared to the rest of baseband.…

We report on the design and characterization of a high-power amplifier with an output power of 36.5 dBm for a frequency range of 50 MHz to 1000 MHz with a total gain of 40 dB. The amplifier is optimized for driving acousto-optic and…