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相关论文: Perfect valley polarization in MoS2

200 篇论文

Manipulation of spin-polarized electronic states of two-dimensional (2D) materials under ambient conditions is necessary for developing new quantum devices with small physical dimensions. Here, we explore spin-dependent electronic…

介观与纳米尺度物理 · 物理学 2021-11-24 Rajibul Islam , Barun Ghosh , Carmine Autieri , Sugata Chowdhury , Arun Bansil , Amit Agarwal , Bahadur Singh

Half-metallic Heusler alloy compounds with Curie temperatures above room temperature are suitable candidate electrode materials for injecting large spin-polarised charge carriers into the semiconducting barriers at the ferromagnet…

材料科学 · 物理学 2025-04-23 Aloka Ranjan Sahoo , Sharat Chandra

1T$^{\prime}$ phase of the monolayer transition metal dichalcogenides has recently attracted attention for its potential in nanoelectronic applications. We theoretically prove the topological behavior and phase transition of…

介观与纳米尺度物理 · 物理学 2025-03-19 Mohammad Mortezaei Nobahari , Mahmood Rezaei Roknabadi

We predict that in a twisted homobilayer of transition-metal dichalcogenide MoS$_2$, spin-orbit coupling in the conduction band states from $\pm K$ valleys can give rise to moir\'{e} flat bands with nonzero Chern numbers in each valley. The…

介观与纳米尺度物理 · 物理学 2022-03-21 Benjamin T. Zhou , Shannon Egan , Marcel Franz

We analyze magnetic phases of monolayers of transition metal dichalcogenides that are two-valley materials with electron-electron interactions. The exchange inter-valley scattering makes two-valley systems less stable to the spin…

强关联电子 · 物理学 2019-07-31 Dmitry Miserev , Jelena Klinovaja , Daniel Loss

Understanding the nature of sliding ferroelectricity is of fundamental importance for the discovery and application of two-dimensional ferroelectric materials. In this work, we investigate the phenomenon of switchable polarization in a…

介观与纳米尺度物理 · 物理学 2023-11-22 Dongyang Yang , Jing Liang , Jingda Wu , Yunhuan Xiao , Jerry I. Dadap , Kenji Watanabe , Takashi Taniguchi , Ziliang Ye

Interfacing atomically thin van der Waals semiconductors with magnetic substrates enables additional control on their intrinsic valley degree of freedom and provides a promising platform for the development of novel valleytronic devices for…

We investigate with polarized microphotoluminescence the optical pumping of the valley degree of freedom in charge-tunable MoS2 monolayers encapsulated with hexagonal boron nitride at cryogenic temperatures. We report a large steady state…

介观与纳米尺度物理 · 物理学 2021-10-15 Sangjun Park , Steve Arscott , Takashi Taniguchi , Kenji Watanabe , Fausto Sirotti , Fabian Cadiz

We have investigated the valley degeneracy of MoS2 multilayers and its effect on thermoelectric properties. By modulating the layer thickness and external electric field, the hole valleys at {\Gamma} and K points in the highest energy…

材料科学 · 物理学 2016-02-03 Jisook Hong , Changhoon Lee , Jin-Seong Park , Ji Hoon Shim

Electrons hopping in two-dimensional honeycomb lattices possess a valley degree of freedom in addition to charge and spin. In the absence of inversion symmetry, these systems were predicted to exhibit opposite Hall effects for electrons…

In this letter we present photoluminescence measurements with different excitation energies on single-layer MoS$_2$ and MoSe$_2$ in order to examine the resonance behavior of the conservation of circular polarization in these transition…

应用物理 · 物理学 2018-11-06 Hans Tornatzky , Anne-Marie Kaulitz , Janina Maultzsch

Valley, the energy extrema in the electronic band structure at momentum space, is regarded as a new degree of freedom of electrons, in addition to charge and spin. The studies focused on valley degree of freedom now form an emerging field…

材料科学 · 物理学 2020-02-13 He Hu , Wen-Yi Tong , Yu-Hao Shen , Xiangang Wan , Chun-Gang Duan

We study the channel width scaling of back-gated MoS2 metal-oxide-semiconductor field-effect transistors (MOSFETs) from 2 {\mu}m down to 60 nm. We reveal that the channel conductance scales linearly with channel width, indicating no evident…

介观与纳米尺度物理 · 物理学 2012-09-13 Han Liu , Jiangjiang Gu , Peide Ye

Valleytronics is rapidly emerging as an exciting area of basic and applied research. In two dimensional systems, valley polarisation can dramatically modify physical properties through electron-electron interactions as demonstrated by such…

The hydrogenated $\rm{Sb}$ monolayer epitaxially grown on a $\rm{LaFeO_3}$ substrate is a novel type of two-dimensional material hosting quantum spin-quantum anomalous Hall (QS-QAH) states. For a device formed by $\rm{Sb}$ monolayer ribbon,…

介观与纳米尺度物理 · 物理学 2018-02-21 Shu-guang Cheng , Rui-zhi Zhang , Jiaojiao Zhou , Hua Jiang , Qing-Feng Sun

We consider layered decorated honeycomb lattices at two-thirds filling, as realized in some trinuclear organometallic complexes. Localized $S=1$ moments with a single-spin anisotropy emerge from the interplay of Coulomb repulsion and spin…

强关联电子 · 物理学 2017-11-15 J. Merino , A. C. Jacko , A. L. Khosla , B. J. Powell

Generating efficient and highly spin-polarized currents through nanoscale junctions is essential in the field of nanoelectronics and spintronics. In this paper, using $ab$ $initio$ electron transport calculations, we predict highly…

介观与纳米尺度物理 · 物理学 2019-05-30 Dongzhe Li

We investigate the nature of the time-reversal breaking pairing state in the hole-doped monolayer MoS$_{2}$ on the basis of the realistic three-orbital attractive Hubbard-like model with the atomic spin-orbit coupling. Due to the multi-band…

超导电性 · 物理学 2019-08-27 Rikuto Oiwa , Yuki Yanagi , Hiroaki Kusunose

Using a spatially-resolved optical pump-probe experiment, we measure the lateral transport of spin/valley polarized electrons over very long distances (tens of micrometers) in a single WSe2 monolayer. By locally pumping the Fermi sea of 2D…

Transition metal dichalcogenide semiconductors represent elementary components of layered heterostructures for emergent technologies beyond conventional opto-electronics. In their monolayer form they host electrons with quantized circular…