中文
相关论文

相关论文: Quantum transport in graphene Hall bars: Effects o…

200 篇论文

We investigate the effects of vacancies, disorder and sublattice polarization on the electronic properties of a monolayer graphene in the quantum Hall regime. Energy spectra as a function of magnetic field and the localization properties of…

介观与纳米尺度物理 · 物理学 2015-05-13 Ana L. C. Pereira , Peter A. Schulz

We study the effect of various configurations of vacancies on the magnetic properties of graphene nanoflake (GNF) with screened realistic long-range electron interaction [T. O. Wehling, et. al., Phys. Rev. Lett. 106, 236805 (2011)] within…

强关联电子 · 物理学 2023-12-12 V. S. Protsenko , A. A. Katanin

The effects of strain, induced by a Gaussian bump, on the magnetic field dependent transport properties of a graphene Hall bar are investigated. The numerical simulations are performed using both classical and quantum mechanical transport…

介观与纳米尺度物理 · 物理学 2017-01-04 S. P. Milovanovic , F. M. Peeters

This article aims to study the linear and nonlinear optical response of inversion symmetric graphene quantum dots (GQDs) in the presence of on-site disorder or vacancies. The presence of disorder or vacancy breaks the special inversion…

介观与纳米尺度物理 · 物理学 2023-10-26 H. K. Avetissian , G. A. Musayelyan , G. F. Mkrtchian

We provide a comprehensive picture of magnetotransport in graphene monolayers in the limit of non-quantizing magnetic fields. We discuss the effects of two carrier transport, weak localization, weak anti-localization, and strong…

介观与纳米尺度物理 · 物理学 2012-12-24 M. Hilke , M. Massicotte , E. Whiteway , V. Yu

The quantum Hall effect in graphene p-n junctions is studied numerically with emphasis on the effect of disorder at the interface of two adjacent regions. Conductance plateaus are found to be attached to the intensity of the disorder, and…

介观与纳米尺度物理 · 物理学 2009-04-06 Jian Li , Shun-Qing Shen

Particle localization is an essential ingredient in quantum Hall physics [1,2]. In conventional high mobility two-dimensional electron systems Coulomb interactions were shown to compete with disorder and to play a central role in particle…

介观与纳米尺度物理 · 物理学 2015-05-13 J. Martin , N. Akerman , G. Ulbricht , T. Lohmann , K. von Klitzing , J. H. Smet , A. Yacoby

We consider the electronic structure near vacancies in the half-filled honeycomb lattice. It is shown that vacancies induce the formation of localized states. When particle-hole symmetry is broken, localized states become resonances close…

Vacancy-induced magnetization of a graphene layer is investigated by means of a first principle DFT method. Calculations of the formation energy and the magnetization by creating the different number of vacancies in a supercell show that a…

介观与纳米尺度物理 · 物理学 2019-05-15 E. Nakhmedov , E. Nadimi , S. Vedaei , O. Alekperov , F. Tatardar , A. I. Najafov , I. I. Abbasov , A. M. Saletskii

We study electron transport properties of a monoatomic graphite layer (graphene) with different types of disorder. We show that the transport properties of the system depend strongly on the character of disorder. Away from half filling, the…

介观与纳米尺度物理 · 物理学 2007-05-23 P. M. Ostrovsky , I. V. Gornyi , A. D. Mirlin

The quantum Hall effect arises from the interplay between localized and extended states that form when electrons, confined to two dimensions, are subject to a perpendicular magnetic field. The effect involves exact quantization of all the…

介观与纳米尺度物理 · 物理学 2009-11-10 S. Ilani , J. Martin , E. Teitelbaum , J. H. Smet , D. Mahalu , V. Umansky , A. Yacoby

The effect of an inhomogeneous magnetic field which varies inversely as distance on the ground state energy level of graphene is studied. In this work, we analytically show that graphene under the influence of a magnetic field arising from…

强关联电子 · 物理学 2011-07-05 M. R. Setare , D. Jahani

We have carried out ab initio electronic structure calculations on graphane (hydrogenated graphene) with single and double vacancy defects. Our analysis of the density of states reveal that such vacancies induce the mid gap states and…

材料科学 · 物理学 2010-02-11 Bhalchandra S. Pujari , D. G. Kanhere

We present a study of different models of local disorder in graphene. Our focus is on the main effects that vacancies -- random, compensated and uncompensated --, local impurities and substitutional impurities bring into the electronic…

无序系统与神经网络 · 物理学 2008-03-25 Vitor M. Pereira , J. M. B. Lopes dos Santos , A. H. Castro Neto

In order to investigate the interaction between single vacancies in a graphene sheet, we have used spin-polarized density functional theory (DFT). Two distinct configurations were considered, either with the two vacancies located in the…

介观与纳米尺度物理 · 物理学 2016-06-22 Wanderla L. Scopel , Wendel S. Paz , Jair C. C. Freitas

Vacancies in graphene lead to the appearance of localized electronic states with non-vanishing spin moments. Using a mean-field Hubbard model and an effective double-quantum dot description we investigate the influence of strain on…

介观与纳米尺度物理 · 物理学 2016-02-17 Daniel Midtvedt , Alexander Croy

A tight-binding model with randomly fluctuating atomic positions is studied to discuss the effect of strong disorder in graphene. We employ a strong-disorder expansion for the transport quantities and find a diffusive behavior, where the…

介观与纳米尺度物理 · 物理学 2008-04-22 K. Ziegler

In this communication we present together four distinct techniques for the study of electronic structure of solids : the tight-binding linear muffin-tin orbitals (TB-LMTO), the real space and augmented space recursions and the modified…

介观与纳米尺度物理 · 物理学 2021-04-12 Banasree Sadhukhan , Arabinda Nayak , Abhijit Mookerjee

Low temperature magnetoconductance measurements were made in the vicinity of the charge neutrality point. Two origins for the fluctuations were identified close to the CNP. At very low magnetic fields there exist only mesoscopic…

介观与纳米尺度物理 · 物理学 2015-05-14 Simon Branchaud , Alicia Kam , Piotr Zawadzki , Francois M. Peeters , Andrew S. Sachrajda

We study electron transport properties of a monoatomic graphite layer (graphene) with different types of disorder at half filling. We show that the transport properties of the system depend strongly on the symmetry of disorder. We find that…

介观与纳米尺度物理 · 物理学 2007-10-04 P. M. Ostrovsky , I. V. Gornyi , A. D. Mirlin
‹ 上一页 1 2 3 10 下一页 ›