相关论文: Perpendicular magnetic anisotropy in Co$_2$MnGa

Magnetic anisotropies and magnetization reversal properties of the epitaxial Heusler compound Co$_2$Cr$_{0.6}$Fe$_{0.4}$Al (CCFA) deposited on Fe and Cr buffer layers are studied. Both samples exhibit a growth-induced fourfold anisotropy,…

The magnetic properties of MnAs epilayers have been investigated for two different substrate orientations: GaAs(100) and GaAs(111). We have analyzed the magnetization reversal under magnetic field at low temperatures, determining the…

We have investigated anomalous Hall effect and magnetoresistance in a noncentrosymmetric itinerant magnet Cr$_{11}$Ge$_{19}$. While the temperature- and magnetic-field-dependent anomalous Hall conductivity is just proportional to the…

The inverse spinel ferrimagnetic NiCo$_2$O$_4$ possesses high magnetic Curie temperature $T_C$, high spin polarization, and strain-tunable magnetic anisotropy. Understanding the thickness scaling limit of these intriguing magnetic…

Electrical, magnetic and galvanomagnetic properties of half-metallic Heusler alloys of Co$_2$YZ (Y = Ti, V, Cr, Mn, Fe, Ni, and Z = Al, Si, Ga, Ge, In, Sn, Sb) were studied in the temperature range 4.2--900 K and in magnetic fields of up to…

In this work we report the appearence of a large perpendicular magnetic anisotropy (PMA) in Fe$_{1-x}$Ga$_x$ thin films grown onto ZnSe/GaAs(100). This arising anisotropy is related to the tetragonal metastable phase in as-grown samples…

Epitaxial growth of Co20Fe50Ge30 thin film on single crystal MgO (001) substrate is reported. Structure characterization revealed (001)-oriented B2 order of CoFeGe well lattice matched with the MgO barrier. Perpendicular magnetic anisotropy…

The anomalous Hall effect is investigated theoretically by means of density functional calculations for the non-collinear antiferromagnetic order of the hexagonal compounds Mn$_3$Ge and Mn$_3$Sn using various planar triangular magnetic…

We carry out first-principles calculations of the dependence of the intrinsic anomalous Hall conductivity of hcp Co on the magnetization direction. The Hall conductivity decreases smoothly from 481 S/cm to 116 S/cm as the magnetization is…

We show, by SQUID magnetometry, that in (Ga,Mn)As films the in-plane uniaxial magnetic easy axis is consistently associated with particular crystallographic directions and that it can be rotated from the [-110] direction to the [110]…

By submonolayer insertion of Au, Pt, or Pd into Ta / CoFeB / MgO / Ta heterostructures we tune the perpendicular magnetic anisotropy and the coercive field of the ferromagnetic layer. We demonstrate that this has a major influence on the…

A single layer ferromagnetic film magnetized in the plane of an ac current flow, exhibits a characteristic Hall voltage with harmonic and second harmonic components, which is attributed to the presence of spin currents with polarization…

Pulsed current-induced magnetization reversal is investigated in the layer of (Ga,Mn)(Bi,As) dilute ferromagnetic semiconductor (DFS) epitaxially grown under tensile misfit strain causing perpendicular magnetic anisotropy in the layer. The…

$\tau$-MnAl is interesting for spintronic applications as a ferromagnet with perpendicular magnetic anisotropy due to its high uniaxial magnetocrystalline anisotropy. Here we report on the anomalous Nernst effect of sputter deposited…

The temperature and magnetic field dependences of the anomalous Hall effect (AHE) are studied in Mn delta-doped semiconductor heterostructures with a two-dimensional hole gas in a quantum well interacting with the Mn layer. The analysis of…

SiO2/Fe/SiO2 sandwich structure films fabricated by sputtering were studied by varying the Fe layer thickness (t_Fe). The structural and microstructural studies on the samples showed that the Fe layer has grown in nanocrystalline form with…

Based on first principles density functional calculations of the intrinsic anomalous and spin Hall conductivities, we predict that the charge Hall current in Co-based full Heusler compounds Co$_2$XZ (X = Cr and Mn; Z = Al, Si, Ga, Ge, In…

The recent discoveries of surperisingly large anomalous Hall effect in chiral antiderromagnets have triggered extensive research efforts in various fields, ranging from topological condensed-matter physics to antiferromagnetic spintronics,…

We predict a spin anomalous-Hall unidirectional magnetoresistance (AH-UMR) in conducting bilayers composed of a ferromagnetic layer and a nonmagnetic layer, which does $\textit{not}$ rely on the spin Hall effect in the normal metal…

Recent findings of large anomalous Hall signal in nonferromagnetic and nonferrimagnetic materials suggest that the magnetization of the system is not a critical component for the realization of the anomalous Hall effect (AHE). Here, we…