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Ionic gating is a very popular tool to investigate and control the electric charge transport and electronic ground state in a wide variety of different materials. This is due to its capability to induce large modulations of the surface…

超导电性 · 物理学 2021-05-27 Erik Piatti

We perform electric double-layer gating experiments on thin films of niobium nitride. Thanks to a cross-linked polymer electrolyte system of improved efficiency, we induce surface charge densities as high as $\approx 2.8 \times…

By using an electrochemical gating technique with a new combination of polymer and electrolyte, we were able to inject surface charge densities n_2D as high as 3.5 \times 10^15 e/cm^2 in gold films and to observe large relative variations…

介观与纳米尺度物理 · 物理学 2013-01-17 D. Daghero , F. Paolucci , A. Sola , M. Tortello , G. A. Ummarino , R. S. Gonnelli , Jijeesh R. Nair , C. Gerbaldi

Ionic gating is a powerful technique for tuning the physical properties of a material via electric field-induced charge doping, but is prone to introduce extrinsic disorder and undesired electrochemical modifications in the gated material…

We report the observation of electric-field-induced superconductivity on the surface of bulk polycrystalline MoS2 using electric double-layer doping. A gate voltage applied in an ionic liquid environment systematically increased carrier…

超导电性 · 物理学 2025-09-04 Yoshihiro Shimazu , Tomonori Miyatake , Kento Ueno , Masatomo Uehara

The field-effect technique, popular thanks to its application in common field-effect transistors, is here applied to metallic thin films by using as a dielectric a novel polymer electrolyte solution. The maximum injected surface charge,…

介观与纳米尺度物理 · 物理学 2013-12-10 M. Tortello , A. Sola , Kanudha Sharda , F. Paolucci , J. R. Nair , C. Gerbaldi , D. Daghero , R. S. Gonnelli

Electrolyte gating is a powerful technique for accumulating large carrier densities in surface two-dimensional electron systems (2DES). Yet this approach suffers from significant sources of disorder: electrochemical reactions can damage or…

Nanoscale control of charge doping in two-dimensional (2D) materials permits the realization of electronic analogs of optical phenomena, relativistic physics at low energies, and technologically promising nanoelectronics. Electrostatic…

It is shown that the gap solution and critical transition temperature are significantly enhanced by doping in a recently developed BCS formalism for graphene superconductivity in such a way that positive gap and transition temperature both…

超导电性 · 物理学 2017-09-20 Chenmei Xu , Yisong Yang

Doping via electrostatic gating is a powerful and widely used technique to tune the electron densities in layered materials. The microscopic details of how these setups affect the layered material are, however, subtle and call for careful…

介观与纳米尺度物理 · 物理学 2021-01-15 Peiliang Zhao , Jin Yu , H. Zhong , Malt. Rosner , Mikhail I. Katsnelson , Shengjun Yuan

Superconductivity (SC) in the Ba-122 family of iron-based compounds can be controlled by aliovalent or isovalent substitutions, applied external pressure, and strain, the combined effects of which are sometimes studied within the same…

Despite metals are believed to be insensitive to field-effect and conventional Bardeen-Cooper-Schrieffer (BCS) theories predict the electric field to be ineffective on conventional superconductors, a number of gating experiments showed the…

介观与纳米尺度物理 · 物理学 2020-01-08 Federico Paolucci , Giorgio De Simoni , Paolo Solinas , Elia Strambini , Claudio Puglia , Nadia Ligato , Francesco Giazotto

We present an analytically solvable theory of BCS-type superconductivity in good metals which are confined along one of the three spatial directions, such as thin films. Closed-form expressions for the dependence of the superconducting…

超导电性 · 物理学 2023-01-19 Riccardo Travaglino , Alessio Zaccone

Transport of charge carriers can be controlled by doping through chemical and physical means. Unlike chemical doping, physical doping is carried out by a special technique through gate voltages in a field-effect transistor geometry. This…

超导电性 · 物理学 2007-05-23 M. P. Das , F. Green

Manipulating the superconducting states of high-T_c cuprate superconductors in an efficient and reliable way is of great importance for their applications in next-generation electronics. Traditional methods are mostly based on a…

We demonstrate that the superconducting critical temperature (Tc) of thin niobium films can be electrically modulated in a liquid-gated geometry device. Tc can be suppressed and enhanced by applying positive and negative gate voltage,…

介观与纳米尺度物理 · 物理学 2014-07-16 Jiman Choi , Pradheesh R. , Hyungsang Kim , Hyunsik Im , Yonuk Chong , Dong-Hun Chae

In cuprate high-temperature superconductors the doping level is fixed during synthesis, hence the charge carrier density per CuO$_2$ plane cannot be easily tuned by conventional gating, unlike in 2D materials. Strain engineering has…

We have found a new mean field solution in the BCS theory of superconductivity. This unconventional solution indicates the existence of superconducting phase transitions of third order in thin films, or in bulk matter with a layered…

凝聚态物理 · 物理学 2007-05-23 Christofer Cronstrom , Milan Noga

Electrostatic gating provides a way to obtain key functionalities in modern electronic devices and to qualitatively alter materials properties. While electrostatic description of such gating gives guidance for related doping effects,…

材料科学 · 物理学 2016-06-08 Predrag Lazic , Kirill D. Belashchenko , Igor Zutic

The gate-voltage-induced suppression of critical currents in metallic superconductors observed recently [De Simoni et al., Nat. Nanotechnol. 13, 802 (2018)] has raised crucial questions regarding the nature and mechanism of the electric…

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