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相关论文: Tailoring magnetic insulator proximity effects in …

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Magnetic zigzag edges of graphene are considered as a basis for novel spintronics devices despite the fact that no true long-range magnetic order is possible in one dimension. We study the transverse and longitudinal fluctuations of…

材料科学 · 物理学 2008-01-31 Oleg V. Yazyev , M. I. Katsnelson

We explore proximity-induced magnetocaloric effect (MCE) on transition metal dichalcogenides, focusing on a two-dimensional (2D) MoTe$_2$ monolayer deposited on a ferromagnetic semiconductor EuO substrate connected to a heat source. We…

介观与纳米尺度物理 · 物理学 2022-02-09 Natalia Cortés , Francisco J. Peña , Oscar Negrete , Patricio Vargas

Prototypical three-dimensional topological insulators of the Bi$_2$Se$_3$ family provide a beautiful example of the appearance of the surface states inside the bulk band gap caused by spin-orbit coupling-induced topology. The surface states…

介观与纳米尺度物理 · 物理学 2020-10-27 Klaus Zollner , Jaroslav Fabian

This work introduces a new class of two-dimensional crystals with the structure AC$_8$XC$_8$, consisting of two layers of graphene, a chalcogen (X = O, S, Se, Te) intercalation layer, and an alkaline earth (A = Be, Ca, Mg, Sr, Ba) adlayer.…

介观与纳米尺度物理 · 物理学 2025-03-11 Tommy Li

We report a systematic study on strong enhancement of spin-orbit interaction (SOI) in graphene driven by transition-metal dichalcogenides (TMDs). Low temperature magnetotoransport measurements of graphene proximitized to different TMDs…

介观与纳米尺度物理 · 物理学 2019-06-12 T. Wakamura , F. Reale , P. Palczynski , M. Q. Zhao , A. T. C. Johnson , S. Guéron , C. Mattevi , A. Ouerghi , H. Bouchiat

Compared to monolayer graphene, electrons in Bernal-stacked bilayer graphene (BLG) have an additional layer degree of freedom, offering a platform for developing {\it layered spintronics} with the help of proximity-induced magnetism. Based…

介观与纳米尺度物理 · 物理学 2022-09-27 Xuechao Zhai , Yaroslav M. Blanter

The magnetic proximity effect can induce a spin dependent exchange shift in the band structure of graphene. This produces a magnetization and a spin polarization of the electron/hole carriers in this material, paving the way for its use as…

介观与纳米尺度物理 · 物理学 2023-12-13 Boxuan Yang , Bibek Bhujel , Daniel G. Chica , Evan J. Telford , Xavier Roy , Maxen Cosset-Chéneau , Bart J. van Wees

We study the spin dynamics of a ferromagnetic insulator on which graphene is placed. We show that the Gilbert damping is enhanced by the proximity exchange coupling at the interface. The modulation of the Gilbert damping constant is…

介观与纳米尺度物理 · 物理学 2020-04-16 Yuya Ominato , Mamoru Matsuo

Using a density functional method with explicit account for strong Coulomb repulsion within the 4f shell, we calculate effective exchange parameters and the corresponding ordering temperatures of the (ferro)magnetic insulating Eu…

强关联电子 · 物理学 2009-11-10 J. Kunes , Wei Ku , W. E. Pickett

The electronic and magnetic properties of the graphene/Eu/Ni(111) intercalation-like system are studied in the framework of the GGA+U approach with dispersive interactions taken into account. Intercalation of monoatomic Eu layer underneath…

材料科学 · 物理学 2014-07-17 E. N. Voloshina , Yu. S. Dedkov

Proximity orbital and spin-orbit effects of bilayer graphene on monolayer WSe$_2$ are investigated from first-principles. We find that the built-in electric field induces an orbital band gap of about 10 meV in bilayer graphene. Remarkably,…

介观与纳米尺度物理 · 物理学 2017-10-11 Martin Gmitra , Jaroslav Fabian

Due to the weak spin-orbit interaction and the peculiar relativistic dispersion in graphene, there are exciting proposals to build spin qubits in graphene nanoribbons with armchair boundaries. However, the mutual interactions between…

介观与纳米尺度物理 · 物理学 2009-11-13 Hsiu-Hau Lin , Toshiya Hikihara , Horng-Tay Jeng , Bor-Luen Huang , Chung-Yu Mou , Xiao Hu

Graphene is known to have small intrinsic spin-orbit Interaction (SOI). In this review, we demonstrate that SOIs in graphene can be strongly enhanced by proximity effect when graphene is deposited on the top of transition metal…

介观与纳米尺度物理 · 物理学 2021-12-16 Taro Wakamura , Sophie Guéron , Hélène Bouchiat

We study gate field effects on the Mn$_{12}$O$_{12}$(COOH)$_{16}$(H$_2$O)$_4$ | graphene | GaAs heterostructure via first-principles calculations. We find that under moderate doping levels electrons can be added to but not taken from the…

材料科学 · 物理学 2022-01-05 Shuanglong Liu , Maher Yazback , James N. Fry , Xiao-Guang Zhang , Hai-Ping Cheng

We demonstrate a modulation of up to 18% in the magnon spin transport in a magnetic insulator (Y$_{3}$Fe$_{5}$O$_{12}$, YIG) using a common ferromagnetic metal (permalloy, Py) as a magnetic control gate. A Py electrode, placed between two…

介观与纳米尺度物理 · 物理学 2020-03-04 K. S. Das , F. Feringa , M. Middelkamp , B. J. van Wees , I. J. Vera-Marun

To further investigate the interplay between ferromagnetism and topological insulators, thin films of the low-carrier topological insulator (Bi$_x$Sb$_{1-x}$)$_2$Te$_3$ were deposited on the insulating ferromagnet EuS (100) in situ. AC…

材料科学 · 物理学 2018-08-28 Qi I. Yang , Aharon Kapitulnik

The thermodynamic, kinetic and magnetic properties of the hydrogen monomer on doped graphene layers were studied by ab initio simulations. Electron doping was found to heighten the diffusion potential barrier, while hole doping lowers it.…

Coupling graphene's excellent electron and spin transport properties with higher spin-orbit coupling material allows tackling the hurdle of spin manipulation in graphene, due to the proximity to van-der-Waals layers. Here we use magneto…

介观与纳米尺度物理 · 物理学 2022-03-08 Chithra H. Sharma , Pai Zhao , Lars Tiemann , Marta Prada , Arti Dangwal Pandey , Andreas Stierle , Robert. H. Blick

Spin-based electronics in topological insulators (TIs) is favored by the long spin coherence1,2 and consequently fault-tolerant information storage. Magnetically doped TIs are ferromagnetic up to 13 K,3 well below any practical operating…

The magnetic insulator yttrium iron garnet (YIG) with a ferrimagnetic transition temperature of $\sim$560 K has been widely used in microwave and spintronic devices. Anomalous features in the spin Seeback effect (SSE) voltages have been…

强关联电子 · 物理学 2017-10-04 Haoran Man , Zhong Shi , Guangyong Xu , Yadong Xu , Xi Chen , Sean Sullivan , Jianshi Zhou , Ke Xia , Jing Shi , Pengcheng Dai