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Heterostructures and crystal interfaces play a major role in state-of-the-art semiconductor devices and play a central role in the field of oxide electronics. In oxides the link between the microscopic properties of the interfaces and bulk…

At the interface between complex insulating oxides, novel phases with interesting properties may occur, such as the metallic state reported in the LaAlO3/SrTiO3 system. While this state has been predicted and reported to be confined at the…

Oxide heterointerfaces constitute a rich platform for realizing novel functionalities in condensed matter. A key aspect is the strong link between structural and electronic properties, which can be modified by interfacing materials with…

The interfacial electronic properties of complex oxides are governed by a delicate balance between charge transfer, lattice distortions, and electronic correlations, posing a key challenge for controlled tunability in materials research.…

材料科学 · 物理学 2025-11-05 Haidong Liang , Ganesh Ji Omar , Kun Han , Andrew A. Bettiol , Zhen Huang , A. Ariando

The two-carrier transport model as proposed for the two-dimensional electron gas formed at the interfaces of oxide heterostructures is investigated by means of a combined perturbation of near ultra-violet radiation and electrostatic field,…

强关联电子 · 物理学 2012-08-21 A. Rastogi , J. J. Pulikkotil , S. Auluck , Z. Hossain , R. C. Budhani

We report the fabrication of nanostructures from the quasi-two-dimensional electron gas (q2DEG) formed at the LaAlO$_{3}$/ SrTiO$_{3}$ (LAO/STO) interface. The process uses electron beam lithography in combination with reactive ion etching.…

介观与纳米尺度物理 · 物理学 2015-02-24 M. Z. Minhas , H. H. Blaschek , F. Heyroth , G. Schmidt

KTaO3 has recently attracted attention as a model system to study the interplay of quantum paraelectricity, spin-orbit coupling, and superconductivity. However, the high and low vapor pressures of potassium and tantalum present processing…

The relative significance of quantum conductivity correction and magnetic nature of electrons in understanding the intriguing low-temperature resistivity minimum and negative magnetoresistance of the two-dimensional electron gas at…

强关联电子 · 物理学 2021-08-11 Xiaorong Zhou , Zhiqi Liu

Recently, it was established that a two-dimensional electron system can arise at the interface between two oxide insulators LaAlO3 and SrTiO3. This paradigmatic example exhibits metallic behaviour and magnetic properties between…

Perovskite SrIrO3 (SIO) films epitaxially deposited with a thickness of about 60 nm on various substrate materials display nearly strain-relieved state. Films grown on orthorhombic (110) DyScO3 (DSO) are found to display untwinned bulk-like…

强关联电子 · 物理学 2018-09-19 K. R. Kleindienst , K. Wolff , J. Schubert , R. Schneider , D. Fuchs

Surfaces and interfaces offer new possibilities for tailoring the many-body interactions that dominate the electrical and thermal properties of transition metal oxides. Here, we use the prototypical two-dimensional electron liquid (2DEL) at…

First-principles calculation was used to study the structural and electronic features of the low dimensional oxide structure, SrTiO_{3}/Sr_{1-x}La_{x}TiO_{3} (x=0.25) superlattices, constructed by submonolayer low dimensional La doping into…

强关联电子 · 物理学 2015-05-27 P. V. Ong , Jaichan Lee , Warren E. Pickett

The electrical resistance of the two-dimensional electron system (2DES) which forms at the interface of SrTiO3 (STO)-based heterostructures displays anisotropic transport with respect to the direction of current flow at low temperature. We…

The emerging material class of complex-oxides, where manipulation of physical properties lead to new functionalities at their heterointerfaces, is expected to open new frontiers in Spintronics. For example, SrRuO_3 is a promising material…

强关联电子 · 物理学 2015-11-09 S. Roy , C. Autieri , B. Sanyal , T. Banerjee

We report torque magnetometry measurements of an oxide heterostructure consisting of an amorphous Al$_2$O$_3$ thin film grown on a crystalline SrTiO$_3$ substrate ($a$-AO/STO) by atomic layer deposition. We find a torque response that…

强关联电子 · 物理学 2014-12-10 S. L. Tomarken , A. F. Young , S. W. Lee , R. G. Gordon , R. C. Ashoori

We present a computational study of the electronic properties of amorphous SiO2. The ionic configurations used are the ones generated by an earlier molecular dynamics simulations in which the system was cooled with different cooling rates…

无序系统与神经网络 · 物理学 2009-10-30 Thorsten Koslowski , Walter Kob , Katharina Vollmayr

Many of the recent advancements in oxide heterostructures have been attributed to modification of spin, charge, lattice, and orbital order parameters at atomically well-defined interfaces. However, the details on the structural, chemical,…

We have investigated the transport and optical properties along the c-axis of a-axis-oriented Sr2IrO4 epitaxial thin-films grown on LaSrGaO4 (100) substrates. The c-axis resistivity is approximately one order of magnitude larger than that…

强关联电子 · 物理学 2013-10-01 J. Nichols , O. B. Korneta , J. Terzic , L. E. De Long , G. Cao , J. W. Brill , S. S. A. Seo

We have developed the tight-binding theory to study electronic and optical properties of type-II heterostructures CA/C'A' grown from the zinc-blende semiconductors CA and C'A' along the crystallographic direction [001]. The sp^3s*…

介观与纳米尺度物理 · 物理学 2008-10-07 E. L. Ivchenko , M. O. Nestoklon

Interfacial engineering enables various emergent effects such as spin reorientations and transport anisotropy. Noncollinear spin textures are essential for realizing many emergent quantum transport phenomena. However, driving such spin…