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The electronic anomalous Hall effect (AHE), where charge carriers acquire a velocity component orthogonal to an applied electric field, is one of the most fundamental and widely studied phenomena in physics. There are several different AHE…

The low-energy physics of two-dimensional Quantum Anomalous Hall insulators like (Hg,Mn)Te quantum wells or magnetically doped (Bi,Sb)Te thin films can be effectively described by two Chern insulators, including a Dirac, as well as a…

介观与纳米尺度物理 · 物理学 2020-11-11 C. Tutschku , F. S. Nogueira , C. Northe , J. van den Brink , E. M. Hankiewicz

The electronic and magnetic properties of pristine CrPSe$_3$ and mixed Cr$_{1\textrm{-}x}$M$_x$PSe$_3$ (M = Zn, Cd, Hg) monolayers were studied using density functional theory including an on-site Coulomb term (DFT$+U$) and tight-binding…

材料科学 · 物理学 2021-12-23 Juntao Yang , Yong Zhou , Yuriy Dedkov , Elena Voloshina

The quantum anomalous Hall (QAH) insulator is uniquely characterized by the topological Chern number C. Controlling the Chern number is a key step toward functional topological electronics and enables access to exotic quantum phases beyond…

In magnetic topological phases of matter, the quantum anomalous Hall (QAH) effect is an emergent phenomenon driven by ferromagnetic doping, magnetic proximity effects and strain engineering. The realization of QAH states with multiple…

介观与纳米尺度物理 · 物理学 2019-10-23 R. Adhikari , V. V. Volobuev , B. Faina , G. Springholz , A. Bonanni

Quantum spin Hall (QSH) effect is quite promising for applications in spintronics and quantum computations, but presently can only be achieved at ultralow temperature. Searching for large-gap QSH insulators is the key to increase the…

材料科学 · 物理学 2015-05-19 Xin Chen , Linyang Li , Mingwen Zhao

The standard theoretical framework for fractional quantum anomalous Hall effect (FQAH) assumes an isolated flat Chern band in the single particle level. In this paper we challenges this paradigm for the FQAH recently observed in the…

强关联电子 · 物理学 2024-08-12 Boran Zhou , Hui Yang , Ya-Hui Zhang

Starting from a minimal model for a 2D nodal loop semimetal, we study the effect of chiral mass gap terms. The resulting Dirac loop anomalous Hall insulator's Chern number is the phase winding number of the mass gap terms on the loop. We…

介观与纳米尺度物理 · 物理学 2016-10-19 Linhu Li , Miguel A. N. Araújo

The quantum anomalous Hall (QAH) effect is predicted to possess, at zero magnetic field, chiral edge channels that conduct spin polarized current without dissipation. While edge channels have been observed in previous experimental studies…

介观与纳米尺度物理 · 物理学 2015-08-20 Cui-Zu Chang , Weiwei Zhao , Duk Y. Kim , Peng Wei , J. K. Jain , Chaoxing Liu , Moses H. W. Chan , Jagadeesh S. Moodera

The quantum anomalous Hall (QAH) effect - a macroscopic manifestation of chiral band topology at zero magnetic field - has only been experimentally realized by magnetic doping of topological insulators (1 - 3) and delicate design of Moire…

介观与纳米尺度物理 · 物理学 2021-10-14 Fabian R. Geisenhof , Felix Winterer , Anna M. Seiler , Jakob Lenz , Tianyi Xu , Fan Zhang , R. Thomas Weitz

The tunable carrier density plays a key role in the investigation of novel transport properties in three-dimensional topological semimetals. Here we demonstrate that the carrier density as well as the mobility of Dirac semimetal Cd3As2…

介观与纳米尺度物理 · 物理学 2018-12-27 Min Wu , Guolin Zheng , Zheng Chen , Yequn Liu , Wenshuai Gao , Hongwei Zhang , Yuyan Han , Lan Wang , Jianhui Zhou , Wei Ning , Mingliang Tian

We study the practicability of achieving quantum anomalous Hall (QAH) effect with field-tunable Chern number in a magnetically doped, topologically trivial insulating thin film. Specifically in a candidate material,…

介观与纳米尺度物理 · 物理学 2016-01-06 Le Quy Duong , Hsin Lin , Wei-Feng Tsai , Y. P. Feng

The layered antiferromagnetic MnBi2Te4 films have been proposed to be an intrinsic quantum anomalous Hall (QAH) insulator with a large gap. To realize this proposal, it is crucial to open a magnetic gap of surface states. However, recent…

材料科学 · 物理学 2020-04-02 Huixia Fu , Chao-Xing Liu , Binghai Yan

We show that an electric field applied to a strained topological Dirac semimetal, such as Na3Bi and Cd3As2, induces a spin Hall current that is quadratic in the electric field. By regarding the strain as an effective "axial magnetic field"…

介观与纳米尺度物理 · 物理学 2019-05-13 Yasufumi Araki

The quantum anomalous Hall (QAH) effect is a quintessential consequence of non-zero Berry curvature in momentum-space. The QAH insulator harbors dissipation-free chiral edge states in the absence of an external magnetic field. On the other…

The quantum anomalous Hall effect (QAHE) is a robust topological phenomenon featuring quantized Hall resistance at zero magnetic field. We report the QAHE in a rhombohedral pentalayer graphene/monolayer WS2 heterostructure. Distinct from…

介观与纳米尺度物理 · 物理学 2024-05-14 Tonghang Han , Zhengguang Lu , Yuxuan Yao , Jixiang Yang , Junseok Seo , Chiho Yoon , Kenji Watanabe , Takashi Taniguchi , Liang Fu , Fan Zhang , Long Ju

Topological insulators (TIs) are promising for achieving dissipationless transport devices due to the robust gapless states inside the insulating bulk gap. However, currently realized 2D TIs, quantum spin Hall (QSH) insulators, suffer from…

Antiferromagnetic Weyl semimetal Mn$_3$Sn has shown to generate strong intrinsic anomalous Hall effect (AHE) at room temperature, due to large momentum-space Berry curvature from the time-reversal symmetry breaking electronic bands of the…

介观与纳米尺度物理 · 物理学 2019-05-22 P. K. Muduli , T. Higo , T. Nishikawa , D. Qu , H. Isshiki , K. Kondou , D. Nishio-Hamane , S. Nakatsuji , YoshiChika Otani

Quantum anomalous Hall (QAH) insulators exhibit chiral edge channels characterized by vanishing longitudinal conductance and quantized Hall conductance of Ce2/h, wherein the Chern number C is an integer equal to the number of the parallel…

介观与纳米尺度物理 · 物理学 2024-01-05 Peng Deng , Yulei Han , Peng Zhang , Su Kong Chong , Zhenhua Qiao , Kang L. Wang

Two-dimensional (2D) group-III-V honeycomb films have attracted significant interest for their potential application in fields of quantum computing and nanoeletronics. Searching for 2D III-V films with high structural stability and…

材料科学 · 物理学 2016-03-22 Sheng-shi Li , Wei-xiao Ji , Chang-wen Zhang , Ping Li , Pei-ji Wang