相关论文: Phonon assisted resonant tunnelling and its phonon…

Phonon-assisted tunneling rates are evaluated for a well isolated double dot system defined in a GaAs semiconductor heterostructure of finite thickness. A separable model for the confining potential allows accurate determinations of doublet…

Tunneling two-level systems are ubiquitous in amorphous solids, and form a major source of noise in systems such as nano-mechanical oscillators, single electron transistors, and superconducting qubits. Occurance of defect tunneling despite…

We study the effect of electron-phonon interaction on current and zero-frequency shot noise in resonant tunneling through a series triple-quantum-dot coupling to a local phonon mode by means of a nonperturbative mapping technique along with…

With downscaling of electronic circuits, components based on semiconductor quantum dots are assuming increasing relevance for future technologies. Their response under external stimuli intrinsically depend on their quantum properties. Here…

Realizing quantum mechanical behavior in micro- and nanomechanical resonators has attracted continuous research effort. One of the ways for observing quantum nature of mechanical objects is via the mechanism of phonon blockade. Here, we…

We report on linewidth analysis of optical transitions in InAs/GaAs coupled quantum dots as a function of bias voltage, temperature, and tunnel coupling strength. A significant line broadening up to 100 $\mu$eV is observed at hole tunneling…

We find an interference effect for electron-phonon interactions in coupled semiconductor quantum dots that can dominate the nonlinear transport properties even for temperatures close to zero. The intradot electron tunnel process leads to a…

Transport through a single molecular conductor is considered, showing negative differential conductance behavior associated with phonon-mediated electron tunneling processes. This theoretical work is motivated by a recent experiment by…

Phonon-assisted tunneling in a double barrier resonant tunneling device can be seen as a resonance in the electron-phonon Fock space which is tuned by the applied voltage. We show that the geometrical parameters can induce a symmetry…

A gate-defined quantum dot in an InAs nanowire is fabricated on top of a quantum point contact realized in a two-dimensional electron gas. The strong coupling between these two quantum devices is used to perform time-averaged as well as…

Phonons play a key role in the physical properties of materials, and have long been a topic of study in physics. While the effects of phonons had historically been considered to be a hindrance, modern research has shown that phonons can be…

We present a review of features due to resonant tunnelling in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot as well as extrinsic effects,…

We report results on the control of barrier transparency in InAs/InP nanowire quantum dots via the electrostatic control of the device electron states. Recent works demonstrated that barrier transparency in this class of devices displays a…

Phonon-assisted electronic tunnelings through a vibrating quantum dot embedded between normal and superconducting leads are studied in the Kondo regime. In such a hybrid device, with the bias applied to the normal lead, we find a series of…

We consider electromechanical properties of a single-electronic device consisting of movable quantum dot attached to a vibrating cantilever, forming a tunnel contact with a non-movable source electrode. We show that the resonance Kondo…

We study transport through a double quantum dot system in which each quantum dot is coupled to a phonon mode. Such a system can be realized, e.g., using a suspended carbon nanotube. We find that the interplay between strong electron-phonon…

Electronic transport in a triple quantum dot shuttle device in the presence of an ac field is analyzed within a fully quantum mechanical framework. A generalized density matrix formalism is used to describe the time evolution for electronic…

We study the effects of phonons on the tunneling of an atom between two surfaces. In contrast to an atom tunneling in the bulk, the phonons couple very strongly, and qualitatively change the tunneling behavior. This is the first example of…

We perform the investigations of the resonant tunneling via impurities embedded in the AlAs barrier of a single GaAs/AlGaAs heterostructure. In the $I(V)$ characteristics measured at 30mK, the contribution of individual donors is resolved…

We have investigated the noise properties of the tunneling current through vertically coupled self-assembled InAs quantum dots. We observe super-Poissonian shot noise at low temperatures. For increased temperature this effect is suppressed.…