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Two-dimensional (2D) semiconductor of MoS2 has great potential for advanced electronics technologies beyond silicon1-9. So far, high-quality monolayer MoS2 wafers10-12 are already available and various demonstrations from individual…

Transition metal dichalcogenides are 2D structures with remarkable electronic, chemical, optical and mechanical properties. Monolayer and crystal properties of these structures have been extensively investigated, but a detailed…

介观与纳米尺度物理 · 物理学 2018-01-18 Y. M. Jaques , P. Manimunda , Y. Nakanishi , S. Susarla , C. F. Woellner , S. Bhowmick , S. A. S. Asif , D. S. Galvão , C. S. Tiwary , P. M. Ajayan

Atomically thin two dimensional (2D) layered materials have emerged as a new class of material for nanoelectromechanical systems (NEMS) due to their extraordinary mechanical properties and ultralow mass density. Among them, graphene has…

介观与纳米尺度物理 · 物理学 2015-05-28 C. Samanta , P. R. Yasasvi Gangavarapu , A. K. Naik

Due to its high carrier mobility, broadband absorption, and fast response time, graphene is attractive for optoelectronics and photodetection applications. However, the extraction of photoelectrons in conventional metal-graphene junction…

With the advances in low dimensional transition metal dichalcolgenides (TMDCs) based metal oxide semiconductor field effect transistor (MOSFET), the interface between semiconductors and dielectrics has received considerable attention due to…

计算物理 · 物理学 2017-01-02 Sheng Yu , Shunjie Ran , Hao Zhu , Kwesi Eshun , Chen Shi , Kai Jiang , Qiliang Li

Two-dimensional materials and their heterostructures have opened up new possibilities for magnetism at the nanoscale. In this study, we utilize first-principles simulations to investigate the structural, electronic, and magnetic properties…

材料科学 · 物理学 2022-10-11 Diem Thi-Xuan Dang , Ranjan Kumar Barik , Manh-Huong Phan , Lilia M. Woods

In ultra-thin two-dimensional (2-D) materials, the formation of ohmic contacts with top metallic layers is a challenging task that involves different processes than in bulk-like structures. Besides the Schottky barrier height, the transfer…

介观与纳米尺度物理 · 物理学 2019-12-11 Aron Szabo , Achint Jain , Markus Parzefall , Lukas Novotny , Mathieu Luisier

Atomically thin two-dimensional (2D) transition metal dichalcogenides (TMDs), such as MoS$_2$, are promising candidates for nanoscale photonics because of strong-light matter interactions. However, Fermi level pinning due to metal-induced…

介观与纳米尺度物理 · 物理学 2023-03-07 Hon-Loen Sinn , Aravindh Kumar , Eric Pop , Akm Newaz

Elastic properties of materials are an important factor in their integration in applications. Chemical vapor deposited (CVD) monolayer semiconductors are proposed as key components in industrial-scale flexible devices and building blocks of…

Two-dimensional (2D) transition metal dichalcogenides (TMDs), especially MoS2 and WS2 recently attract extensive attentions due to their rich physics and great potential applications. Superior to graphene, MS2 (M = Mo/W) monolayers have a…

材料科学 · 物理学 2013-12-06 Chunxiao Cong , Jingzhi Shang , Xing Wu , Bingchen Cao , Namphung Peimyoo , Caiyu Qiu , Litao Sun , Ting Yu

2D ferromagnets offer valuable insights into the fundamentals of magnetism and stimulate the progress of ultracompact spintronics. The demand for seamless integration of the materials with the Si technology, particularly helpful to their…

We report a technique for transferring large areas of the CVD-grown, few-layer MoS2 from the original substrate to another arbitrary substrate and onto holey substrates, in order to obtain free-standing structures. The method consists of a…

Synthesis of monolayer MoS2 is essential for fulfilling the potential of MoS2 in catalysis, optoelectronics and valleytronics, etc. Herein, we report for the first time the scalable growth of high quality, domain size tunable (edge length…

We report the realization of field-effect transistors (FETs) made with chemically synthesized multilayer 2D crystal semiconductor MoS2. Electrical properties such as the FET mobility, subthreshold swing, on/off ratio, and contact resistance…

介观与纳米尺度物理 · 物理学 2015-01-30 Wan Sik Hwang , Maja Remskar , Rusen Yan , Tom Kosel , Jong Kyung Park , Byung Jin Cho , Wilfried Haensch , Huili , Xing , Alan Seabaugh , Debdeep Jena

We report on the modulation of tunneling resistance in MoS2 monolayers by nano-indentation using an atomic force microscope (AFM). The resistance between the conductive AFM tip and the bottom electrode separated by a monolayer MoS2 is…

材料科学 · 物理学 2013-11-15 Deyi Fu , Jian Zhou , Sefaattin Tongay , Kai Liu , Wen Fan , Tsu-Jae King Liu , Junqiao Wu

Magnetism in monolayer (ML) VSe2 has attracted broad interest in spintronics while existing reports have not reached consensus. Using element-specific X-ray magnetic circular dichroism, a magnetic transition in ML VSe2 has been demonstrated…

The increasing prevalence of pharmaceutical contaminants within the aquatic environment has generated considerable environmental concerns, especially regarding persistent anticancer medications like the kinase inhibitor sorafenib (SRF),…

材料科学 · 物理学 2026-03-31 I. Agnes Felicia Roy , Kuo Yuan Hwa , Aravindan Santhan , Slava V Rotkin

Applications like high density information storage, neuromorphic computing, nanophotonics, etc. require ultra-thin electronic devices which can be controlled with applied electric field. Of late, atomically thin two-dimensional (2D)…

Rapidly increasing interest in low-dimensional materials is driven by the emerging requirement to develop nanoscale solid-state devices with novel functional properties that are not available in three-dimensional bulk phases. Among the…

材料科学 · 物理学 2024-02-27 Rui-Qi Wang , Tianmin Lei , Yue-Wen Fang

Atomic vacancies, such as chalcogen vacancies in 2D TMDs, are important in changing the host material's electronic structure and transport properties. We present a straightforward one-step method for growing monolayer MoS2 utilizing…

介观与纳米尺度物理 · 物理学 2024-05-28 Sudipta Majumder , Vaibhav Walve , Rahul Chand , Gokul M. A. , Sooyeon Hwang , G. V. Pavan Kumar , Aparna Deshpande , Atikur Rahman