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相关论文: Review on carrier multiplication in graphene

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Graphene is an ideal material to study fundamental Coulomb- and phonon-induced carrier scattering processes. Its remarkable gapless and linear band structure opens up new carrier relaxation channels. In particular, Auger scattering bridging…

Graphene as a zero-bandgap semiconductor is an ideal model structure to study the carrier relaxation channels, which are inefficient in conventional semiconductors. In particular, it is of fundamental interest to address the question…

介观与纳米尺度物理 · 物理学 2015-05-19 Torben Winzer , Andreas Knorr , Ermin Malic

Carrier multiplication is a many-particle process giving rise to the generation of multiple electron-hole pairs. This process holds the potential to increase the power conversion efficiency of photovoltaic devices. In graphene, carrier…

介观与纳米尺度物理 · 物理学 2014-10-27 Florian Wendler , Andreas Knorr , Ermin Malic

The linear, gapless bandstructure of graphene provides ideal conditions for Auger processes. They are of great importance for fundamental research and technological applications, since they qualitatively change the carrier dynamics. Time-,…

介观与纳米尺度物理 · 物理学 2015-01-20 Torben Winzer , Ermin Malic

Graphene is emerging as a viable alternative to conventional optoelectronic, plasmonic, and nanophotonic materials. The interaction of light with carriers creates an out-of-equilibrium distribution, which relaxes on an ultrafast timescale…

介观与纳米尺度物理 · 物理学 2013-06-25 D. Brida , A. Tomadin , C. Manzoni , Y. J. Kim , A. Lombardo , S. Milana , R. R. Nair , K. S. Novoselov , A. C. Ferrari , G. Cerullo , M. Polini

Photo-excitation in solids can trigger a cascade in which multiple particle-hole excitations are generated. We analyze the carrier multiplication cascade of impact excitation processes in graphene and show that the number of pair…

介观与纳米尺度物理 · 物理学 2013-04-24 Justin C. W. Song , Klaas J. Tielrooij , Frank H. L. Koppens , Leonid S. Levitov

Hot charge carriers in graphene exhibit fascinating physical phenomena, whose understanding has improved greatly over the past decade. They have distinctly different physical properties compared to, for example, hot carriers in conventional…

介观与纳米尺度物理 · 物理学 2021-05-19 Mathieu Massicotte , Giancarlo Soavi , Alessandro Principi , Klaas-Jan Tielrooij

The energy-dependence of the electronic scattering time is probed by Landau level spectroscopy in quasi neutral multilayer epitaxial graphene. From the Landau levels broadening we find that the scattering rate increases linearly with…

介观与纳米尺度物理 · 物理学 2011-11-22 M. Orlita , C. Faugeras , R. Grill , A. Wysmolek , W. Strupinski , C. Berger , W. A. de Heer , G. Martinez , M. Potemski

We present a microscopic study on current generation in graphene in response to an electric field. While scattering is generally considered to reduce the current, we reveal that in graphene Auger processes give rise to a current enhancement…

介观与纳米尺度物理 · 物理学 2017-06-09 Roland Jago , Florian Wendler , Ermin Malic

The dynamics of photo-generated electron-hole pairs in solids are dictated by many-body interactions such as electron-electron and electron-phonon scattering. Hence, understanding and controlling these scattering channels is crucial for…

材料科学 · 物理学 2016-07-13 Isabella Gierz

Strong electron-electron interactions in graphene are expected to result in multiple-excitation generation by the absorption of a single photon. We show that the impact of carrier multiplication on photocurrent response is enhanced by very…

介观与纳米尺度物理 · 物理学 2011-11-29 Justin C. W. Song , Mark S. Rudner , Charles M. Marcus , Leonid S. Levitov

We present a microscopic study on the impact of doping on the carrier dynamics in graphene, in particular focusing on its influence on the technologically relevant carrier multiplication in realistic, doped graphene samples. Treating the…

介观与纳米尺度物理 · 物理学 2017-01-17 Faris Kadi , Torben Winzer , Andreas Knorr , Ermin Malic

By using Boltzmann formalism, we show that carrier multiplication by impact ionization can take place at relatively low electric fields during electronic transport in graphene. Because of the absence of energy gap, this effect is not…

介观与纳米尺度物理 · 物理学 2015-05-27 Anuj Girdhar , Jean-Pierre Leburton

The diffusion of electron-hole pairs, which are excited in an intrinsic graphene by the ultrashort focused laser pulse in mid-IR or visible spectral region, is described for the cases of peak-like or spread over the passive region…

介观与纳米尺度物理 · 物理学 2015-06-11 F. T. Vasko , V. V. Mitin

Direct and inverse Auger scattering are amongst the primary processes that mediate the thermalization of hot carriers in semiconductors. These two processes involve the annihilation or generation of an electron-hole pair by exchanging…

The conversion of light into free electron-hole pairs constitutes the key process in the fields of photodetection and photovoltaics. The efficiency of this process depends on the competition of different relaxation pathways and can be…

介观与纳米尺度物理 · 物理学 2013-04-24 K. J. Tielrooij , J. C. W. Song , S. A. Jensen , A. Centeno , A. Pesquera , A. Zurutuza Elorza , M. Bonn , L. S. Levitov , F. H. L. Koppens

Recent pump-probe experiments performed on graphene in a perpendicular magnetic field have revealed carrier relaxation times ranging from picoseconds to nanoseconds depending on the quality of the sample. To explain this surprising…

The optical properties of graphene are made unique by the linear band structure and the vanishing density of states at the Dirac point. It has been proposed that even in the absence of a semiconducting bandgap, a relaxation bottleneck at…

Hot electrons undergo Auger scattering during their relaxation process has a multiplication effect,which can generate more electrons above the Fermi level, thus improving the efficiency of photoelectric signal conversion.However,the…

Auger scattering channels are of fundamental importance to describe and understand the non-equilibrium charge carrier dynamics in graphene. While impact excitation increases the number of carriers in the conduction band and has been…

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