相关论文: Valley filtering by a line-defect in graphene: qua…
The time evolution of a wavepacket in strained graphene is studied within the tight-binding model and continuum model. The effect of an external magnetic field, as well as a strain-induced pseudo-magnetic field, on the wave packet…
Valleytronics using two-dimensional materials opens unprecedented opportunities for information processing with the valley polarizer being a basic building block. Paradigms such as strain engineering, the inclusion of line defects, and the…
A valley filter capable of generating a valley-polarized current is a crucial element in valleytronics, yet its implementation remains challenging. Here, we propose a valley filter made of a graphene bilayer which exhibits a 1D moir\'{e}…
In this review we focus on the effect of the Dirac nature of graphene quasiparticles on two separate aspects. The first of these involves transport across superconducting graphene junctions with barriers of thickness $d_0$ and arbitrary…
Spatially varying strained graphene can acquire interesting electronic properties because of the strain-induced valley-dependent gauge (pseudomagnetic) fields1,2. Here we report the realization of strained graphene regions located close to…
Motivated by recent experiments in weakly hybridized small-angle twisted bilayer graphene, we investigate how valley imbalance affects the viscosity of two-dimensional Dirac fluids. We show that shifting the two low-energy Dirac cones…
Plasma photonic crystals designed in this paper are composed of gas discharge tubes to control the flow of electromagnetic waves. The band structures calculated by the finite element method are consistent with the experimental results in…
Here we theoretically investigate the valley-dependent transmission of particles through a combined electric and magnetic barrier in the $\alpha-T_3$ model which interpolates between the honeycomb and the dice lattices. We put forward that…
Strain is extensively used to controllably tailor the electronic properties of materials. In the context of indirect band-gap semiconductors such as silicon, strain lifts the valley degeneracy of the six conduction band minima, and by…
We report quantum interference effects in the electrical conductance of chemical vapor deposited graphene nanoconstrictions fabricated using feedback controlled electroburning. The observed multimode Fabry-Perot interferences can be…
Angular momentum conversion between mechanical rotation and the valley degree of freedom in 2D Dirac materials is investigated theoretically. Coupling between the valley and vorticity of dynamic lattice distortions is derived by applying…
Selective control over the emission pattern of valley-polarized excitons in monolayer transition metal dichalcogenides is crucial for developing novel valleytronic, quantum information, and optoelectronic devices. While significant progress…
In strained graphene, lattice deformation can create pseudo-magnetic fields and result in zero-field Landau level-like quantization. In the presence of an external magnetic field, valley-polarized Landau levels are predicted to be observed…
Developing alternative paradigms of electronics beyond silicon technology requires the exploration of fundamentally new physical mechanisms, such as the valley specific phenomena in hexagonal two-dimensional materials. We realize ballistic…
Recent studies on cavity-coupled two-dimensional electron gas demonstrate that vacuum-field engineering can tailor electronic transport properties of materials. By achieving ultra-strong coupling between a terahertz resonator and mesoscopic…
The possibility to effect valley splitting of an electronic current in graphene represents the essential component in the new field of valleytronics in such two-dimensional materials. Based on a symmetry analysis of the scattering matrix,…
Two-dimensional semimetals with tilted Dirac cones in the electronic band structure are shown to exhibit spatial separation of carriers belonging to different valleys under illumination. In stark contrast to gapped Dirac materials this…
We study transport in twisted bilayer graphene and show that electrostatic barriers can act as valley splitters, where electrons from the $K$ ($K'$) valley are transmitted only to e.g.\ the top (bottom) layer, leading to valley-layer locked…
In gapped Dirac materials, the topological current associated with each valley can flow in opposite directions creating long-range charge-neutral valley currents. We report valley currents in hBN/bilayer-graphene heterostructures with an…
We report on the possibility to simultaneously generate in graphene a {\it bulk valley-polarized dissipative transport} and a {\it quantum valley Hall effect} by combining strain-induced gauge fields and real magnetic fields. Such unique…