相关论文: Current-temperature scaling for a Schottky interfa…
The heat transport in heavy-doped n-GaAs has been investigated at temperatures T=300 K and 77 K using the irradiation of the metal-semiconductor contact by modulated CO_{2}-laser radiation. It is shown this approach giving an opportunity to…
We calculate the finite temperature compressibility for two-dimensional semiconductor systems, monolayer graphene, and bilayer graphene within the Hartree-Fock approximation. We find that the calculated temperature dependent compressibility…
Electrical currents in low-dimensional quantum materials can drive electrons far from equilibrium, creating stark imbalance between electron and lattice temperatures. Yet, no existing methods enable simultaneous nanoscale mapping of both…
We investigate electron transport across a complex oxide heterointerface of La$_{0.67}$Sr$_{0.33}$MnO$_3$ (LSMO) on Nb:SrTiO$_3$ (Nb:STO) at different temperatures. For this, we employ the conventional current-voltage method as well as the…
Non-equilibrium transport and phonon branch-resolved size effects in single-layer graphene materials are studied under a multi-temperature kinetic model, which is developed for capturing the branch-dependent electron-phonon coupling.…
The thermal stability of most electronic and photo-electronic devices strongly depends on the relationship between Schottky Barrier Height (SBH) and temperature. In this paper, the possible of thermionic current depicted via correct and…
The low temperature electrical behavior of adjacent silicide/Si Schottky contacts with or without dopant segregation is investigated. The electrical characteristics are very well modeled by thermionic-field emission for non-segregated…
Graphene is a quantum spin Hall insulator with a 45 $\mu$eV wide non-trivial topological gap induced by the intrinsic spin-orbit coupling. Even though this zero-field spin splitting is weak, it makes graphene an attractive candidate for…
Non-crystalline thin-film Schottky diodes are cost-effective but often exhibit unreliable electrical characteristics due to material imperfections. In this work, I present a Schottky diode structure utilizing in-situ grown Ta2O5 and ZnO…
We have observed temperature-dependent reversal of the rectifying polarity in Au/Nb:SrTiO3 Schottky junctions. By simulating current-voltage characteristics we have found that the permittivity of SrTiO3 near the interface exhibits…
The electron band structure of graphene on SrTiO3 substrate has been investigated as a function of temperature. The high-resolution angle-resolved photoemission study reveals that the spectral width at Fermi energy and the Fermi velocity of…
Although extensive experimental and theoretical works have been conducted to understand the ballistic and diffusive phonon transport in nanomaterials recently, direct observation of temperature and thermal nonequilibrium of different phonon…
In this paper, the Ni Schottky barrier on GaN epilayer grown on free standing substrates has been characterized. First, transmission electrical microscopy (TEM) images and nanoscale electrical analysis by conductive atomic force microscopy…
We present systematic thermal conductivity measurements of suspended thin graphite ribbons, 234-527 nm thick, using a four-probe 3-omega method. Unlike recent reports of phonon hydrodynamics and exceptionally high thermal conductivity in…
Detail transport properties of graphene/MoS2/metal vertical heterostructure have been investigated. The van der Waals interface between the graphene and MoS2 exhibits Schottky barrier. The application of gate voltage to the graphene layer…
We present a theoretical framework for the calculation of charge transport through nanowire-based Schottky-barrier field-effect transistors that is conceptually simple but still captures the relevant physical mechanisms of the transport…
A novel approach that enables the study of parallel transport in magnetized plasmas is presented. The method applies to general magnetic fields with local or nonlocal parallel closures. Temperature flattening in magnetic islands is…
A general solution for the electrostatic potential in an atomic-thin-body (ATB) field-effect transistor geometry is presented. The effective electrostatic scaling length, {\lambda}eff, is extracted from the analytical model, which cannot be…
We propose the existence of a substantial charge current parallel to the interface between a noncentrosymmetric superconductor and a metallic ferromagnet. Our analysis focuses upon two complementary orbital-angular-momentum pairing states…
Electron transport in graphene is along the sheet but junction devices are often made by stacking different sheets together in a "side-contact" geometry which causes the current to flow perpendicular to the sheets within the device. Such…