相关论文: Spin-polarized quasiparticle tunneling in spin-fil…
Electrical manipulation of spin-polarized current is highly desirable yet tremendously challenging in developing ultracompact spintronic device technology. Here we propose a scheme to realize the all-electrical manipulation of…
We investigate electronic thermal rectification in ferromagnetic insulator-based superconducting tunnel junctions. Ferromagnetic insulators coupled to superconductors are known to induce sizable spin splitting in the superconducting density…
The recently discovered magnetism of two-dimensional (2D) van der Waals crystals have attracted a lot of attention. Among these materials is CrI$_3$ - a magnetic semiconductor exhibiting transitions between antiferromagnetic and…
We present a new study of magnetic structures with controllable effective exchange energy for Josephson switches and memory. As a basis for a weak link we propose to use a periodic structure comprised of ferromagnetic (F) layers spaced by…
Zigzag phosphorene nanoribbons are metallic owing to the edge states, whose energies are inside the gap and far from the bulk bands. We show that -- through electrical manipulation of edge states -- electron propagation can be restricted to…
Spin-valve structures are usually associated with the ability to modify the resistance of electrical currents. We here demonstrate a profoundly different effect of a spin-valve. In combination with a topological insulator and…
Ferromagnets with high spin polarization are known to be valuable for spintronics--a research field that exploits the spin degree of freedom in information technologies. Recently, antiferromagnets have emerged as promising alternative…
We assess the potential of the ferrimagnetic spinel ferrites CoFe2O4 and NiFe2O4 to act as spin filtering barriers in magnetic tunnel junctions. Our study is based on the electronic structure calculated by means of first-principles density…
We analyze the broad range of spin-dependent nonequilibrium transport properties of hybrid systems composed of a normal region tunnel coupled to two superconductors with exchange fields induced by the proximity to thin ferromagnetic layers…
Spintronics is an approach to electronics in which the spin of the electrons is exploited to control the electric resistance R of devices. One basic building block is the spin-valve, which is formed if two ferromagnetic electrodes are…
Organic spintronic devices have been appealing because of the long spin life time of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous studies, the control of resistance of…
We demonstrated that the spin injection/extraction efficiency is enhanced by an ultrathin Mg insertion layer (<= 2 nm) in Fe/Mg/MgO/n+-Si tunnel junctions. In diode-type vertical three-terminal devices fabricated on a Si substrate, we…
Spin valves are essential components in spintronic memory devices, whose conductance is modulated by controlling spin-polarized electron tunneling through the alignment of the magnetization in ferromagnetic elements. Whereas conventional…
Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control…
Altermagnetic (AM) materials have recently attracted significant interest due to the non-relativistic momentum-dependent spin splitting of their electronic band structure which may be useful for antiferromagnetic (AFM) spintronics. So far,…
We fabricate fully epitaxial Fe/ZnO/MgO/Fe magnetic tunnel junctions (MTJs) with a bilayer tunnel barrier, in which ZnO has a metastable rock-salt crystal structure. We observe a high magnetoresistance ratio up to 96% at room temperature…
Controlling spin current and magnetic exchange coupling by applying an electric field and achieving high spin injection efficiency at the same time in a nanostructure coupled to ferromagnetic electrodes have been the outstanding challenges…
We study the coherent control of spin tunneling for a spin-orbit (SO) coupled boson held in a driven triple well. Under high-frequency approximation, we analytically obtain the quasienergies of the SO-coupled bosonic triple-well system and…
We suggest a model of synthetic ferrimagnetic semiconductor structure based on GaAs-AlGaAs quantum well doped by two Mn delta-layers. The coupling between the delta-layers is mediated by extra holes, and can be switched between ferro- and…
We investigate transport properties of junctions between two spin-split superconductors linked by a spin-polarized tunneling barrier. The spin-splitting fields in the superconductors (S) are induced by adjacent ferromagnetic insulating (FI)…