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相关论文: Electron Spin Resonance at the Level of 10000 Spin…

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Electrical detection of spins is an essential tool in understanding the dynamics of spins in semiconductor devices, providing valuable insights for applications ranging from optoelectronics and spintronics to quantum information processing.…

介观与纳米尺度物理 · 物理学 2015-06-23 C. C. Lo , M. Urdampilleta , P. Ross , M. F. Gonzalez-Zalba , J. Mansir , S. A. Lyon , M. L. W. Thewalt , J. J. L. Morton

Modulation of donor electron wavefunction via electric fields is vital to quantum computing architectures based on donor spins in silicon. For practical and scalable applications, the donor-based qubits must retain sufficiently long…

材料科学 · 物理学 2020-03-28 Daniel K. Park , Sejun Park , Hyejung Jee , Soonchil Lee

We report the development of the frequency-modulation (FM) method for measuring electron spin resonance (ESR) absorption in the 210-420 GHz frequency range. We demonstrate that using a high-frequency ESR spectrometer without resonating…

强关联电子 · 物理学 2010-07-14 Balint Nafradi , Richard Gaal , Titusz Feher , Laszlo Forro

A theory of spin relaxation in graphene including intrinsic, Bychkov-Rashba, and ripple spin-orbit coupling is presented. We find from spin relaxation data by Tombros et al. [Nature 448, 571 (2007).] that intrinsic spin-orbit coupling…

强关联电子 · 物理学 2015-03-13 F. Simon , F. Muranyi , B. Dora

Magnetic resonance with ensembles of electron spins is nowadays performed in frequency ranges up to 240 GHz and in corresponding magnetic fields of up to 10 T. However, experiments with single electron and nuclear spins so far only reach…

We study two-electron singlet-triplet relaxation of donor-bound electrons in Silicon. Hyperfine interaction of the electrons with the phosphorus (P) nuclei, in combination with the electron-phonon interaction, lead to relaxation of the…

介观与纳米尺度物理 · 物理学 2015-05-20 Massoud Borhani , Xuedong Hu

We report on electron spin resonance spectroscopy measurements using a superconducting flux qubit with a sensing volume of 6 fl. The qubit is read out using a frequency-tunable Josephson bifurcation amplifier, which leads to an inferred…

量子物理 · 物理学 2020-05-13 Rangga P. Budoyo , Kosuke Kakuyanagi , Hiraku Toida , Yuichiro Matsuzaki , Shiro Saito

We present pulsed electrically detected magnetic resonance (EDMR) measurements at low magnetic fields using posphorus-doped silicon with natural isotope composition as a model system. Our measurements show that pulsed EDMR experiments, well…

材料科学 · 物理学 2015-06-23 L. Dreher , F. Hoehne , H. Morishita , H. Huebl , M. Stutzmann , K. M. Itoh , M. S. Brandt

Solid-state devices used for quantum computation and quantum sensing applications are adversely affected by loss and noise caused by spurious, charged two-level systems (TLS) and stray paramagnetic spins. These two sources of noise are…

量子物理 · 物理学 2024-07-17 Aditya Jayaraman , Andrey V. Danilov , Jonas Bylander , Sergey E. Kubatkin

Dopants in silicon have been studied for many decades using optical and electron spin resonance (ESR) spectroscopy. Recently, new features have been observed in the spectra of dopants in isotopically enriched 28Si since the reduced…

材料科学 · 物理学 2015-06-17 S. Shankar , A. M. Tyryshkin , S. A. Lyon

We analyze the electron spin relaxation rate $1/T_1$ of individual ion-implanted $^{31}$P donors, in a large set of metal-oxide-semiconductor (MOS) silicon nanoscale devices, with the aim of identifying spin relaxation mechanisms peculiar…

Electron spin resonance (ESR) is usually interpreted as a single-particle phenomenon protected from the effect of many-body correlations. We show that this is not the case in a two-dimensional Fermi liquid (FL) with spin-orbit coupling…

介观与纳米尺度物理 · 物理学 2016-02-17 Saurabh Maiti , Muhammad Imran , Dmitrii L. Maslov

Spin-based quantum computation (QC) in the solid state is considered to be one of the most promising approaches to scalable quantum computers. However, it faces problems such as initializing the spins, selectively addressing and…

仪器与探测器 · 物理学 2015-06-15 Aharon Blank , Ekaterina Dikarov , Roman Shklyar , Ygal Twig

Electron paramagnetic resonance of ensembles of phosphorus donors in silicon has been detected electrically with externally applied magnetic fields lower than 200 G. Because the spin Hamiltonian was dominated by the contact hyperfine term…

其他凝聚态物理 · 物理学 2015-05-13 H. Morishita , L. S. Vlasenko , H. Tanaka , K. Semba , K. Sawano , Y. Shiraki , M. Eto , K. M. Itoh

We report the development of a continuous-wave and pulsed X-band electron spin resonance (ESR) spectrometer for the study of spins on ordered surfaces down to cryogenic temperatures. The spectrometer operates in ultra-high vacuum and…

Electrically detected electron spin resonance (ESR) is used to study the hyperfine interaction of the two-dimensional electrons and the nuclei of the host lattice in a GaAs/AlGaAs heterostructure. Under the microwave and radio- frequency…

介观与纳米尺度物理 · 物理学 2009-11-07 Chris Hillman , H. W. Jiang

We study a scheme for electrical detection of the spin resonance (ESR) of a single electron trapped near a Field Effect Transistor (FET) conduction channel. In this scheme, the resonant Rabi oscillations of the trapped electron spin cause a…

材料科学 · 物理学 2007-05-23 I. Martin , D. Mozyrsky , H. W. Jiang

We present a new approach to the induction detection of electron spin resonance (ESR) signals exploiting the nonlinear properties of a superconducting resonator. Our experiments employ a yttrium barium copper oxide (YBCO) superconducting…

介观与纳米尺度物理 · 物理学 2015-06-04 Gil Bachar , Oren Suchoi , Oleg Shtempluck , Aharon Blank , Eyal Buks

Direct electron spin resonance (ESR) on a high mobility two dimensional electron gas in a single AlAs quantum well reveals an electronic $g$-factor of 1.991 at 9.35 GHz and 1.989 at 34 GHz with a minimum linewidth of 7 Gauss. The ESR…

介观与纳米尺度物理 · 物理学 2009-11-11 M. Schulte , J. G. S. Lok , G. Denninger , W. Dietsche

We present the results of electrically-detected magnetic resonance (EDMR) experiments on silicon with ion-implanted phosphorus nanostructures, performed at 5 K. The devices consist of high-dose implanted metallic leads with a square gap,…