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Normal state resistivity and Hall effect are shown to be successfully modeled by a two-band model of holes and electrons that is applied self-consistently to (i) DC transport data reported for eight bulk-crystal and six oriented-film…

超导电性 · 物理学 2012-02-09 Dale R. Harshman , John D. Dow , Anthony T. Fiory

Magnetism and spin-orbit coupling (SOC) are two quintessential ingredients underlying novel topological transport phenomena in itinerant ferromagnets. When spin-polarized bands support nodal points/lines with band degeneracy that can be…

Digital alloys of GaSb/Mn have been fabricated by molecular beam epitaxy. Transmission electron micrographs showed good crystal quality with individual Mn-containing layers well resolved; no evidence of 3D MnSb precipitates was seen in…

The periodic response of magnetoresistance to an externally tunable parameter, such as magnetic field or chemical composition, in the bulk or an artificially designed material has been exploited for technological applications as well as to…

材料科学 · 物理学 2012-09-04 S. Dickert , D. K. Singh , R. Thantirige , M. T. Tuominen

The recent discoveries of surperisingly large anomalous Hall effect in chiral antiderromagnets have triggered extensive research efforts in various fields, ranging from topological condensed-matter physics to antiferromagnetic spintronics,…

材料科学 · 物理学 2024-02-27 Linxuan Song , Feng Zhou , Hang Li , Bei Ding , Xue Li , Xuekui Xi , Yuan Yao , Yong-Chang Lau , Wenhong Wang

The realization of the Quantum anomalous Hall effect (QAHE) in two dimensional (2D) metal organic frameworks (MOFs), (MC$_4$S$_4$)$_3$ with M = Mn, Fe, Co, Ru and Rh, has been investigated based on a combination of first-principles…

材料科学 · 物理学 2018-09-18 F. Crasto de Lima , G. J. Ferreira , R. H. Miwa

Due to the potential applications in the low-power-consumption spintronic devices, the quantum anomalous Hall effect (QAHE) has attracted tremendous attention in past decades. However, up to now, QAHE was only observed experimentally in…

材料科学 · 物理学 2021-01-13 Zhen Zhang , Jing-Yang You , Xing-Yu Ma , Bo Gu , Gang Su

We numerically study the three-dimensional (3D) quantum Hall effect (QHE) and magnetothermoelectric transport of Weyl semimetals in the presence of disorder. We obtain a bulk picture that the exotic 3D QHE emerges in a finite range of Fermi…

介观与纳米尺度物理 · 物理学 2021-08-18 R. Ma , D. N. Sheng , L. Sheng

The purpose of this study was to investigate the magnetotransport properties of the Ge(0.743)Pb(0.183)Mn(0.074)Te mixed crystal. The results of magnetization measurements indicated that the compound is a spin-glass-like diluted magnetic…

The origin of anomalous Hall effect (AHE) in magnetic materials is one of the most intriguing aspect in condensed matter physics and has been controversial for a long time. Recent studies indicate that the intrinsic AHE is closely related…

强关联电子 · 物理学 2018-09-13 Qi Wang , Yuanfeng Xu , Rui Lou , Zhonghao Liu , Man Li , Yaobo Huang , Dawei Shen , Hongming Weng , Shancai Wang , Hechang Lei

We report the temperature dependence of resistivity (rho) and Hall coefficient (R_H) in the normal state of homogeneously disordered epitaxial NbN thin films with kFl~3.27-10.12. The superconducting transition temperature (Tc) of these…

The discovery of the quantum Hall effect (QHE) in 1980 marked a turning point in condensed matter physics: given appropriate experimental conditions, the Hall conductivity {\sigma}_xy of a two-dimensional (2D) electron system is exactly…

介观与纳米尺度物理 · 物理学 2023-06-13 Johannes Gooth , Stanislaw Galeski , Tobias Meng

Anomalous Hall effect (AHE) and anomalous Nernst effect (ANE) in a variety of ferromagnetic metals including pure metals, oxides, and chalcogenides, are studied to obtain unified understandings of their origins. We show a universal scaling…

材料科学 · 物理学 2009-11-11 T. Miyasato , N. Abe , T. Fujii , A. Asamitsu , S. Onoda , Y. Onose , N. Nagaosa , Y. Tokura

We demonstrate that a distinct high-disorder anomalous Hall effect phase emerges at the correlated insulator threshold of ultra-thin, amorphous, ferromagnetic CNi3 films. In the weak localization regime, where the sheet conductance G >>…

强关联电子 · 物理学 2010-02-26 Y. M. Xiong , P. W. Adams , G. Catelani

We report on a systematic study of the structural, magnetic properties and the anomalous Hall effect, in the Heusler alloy Co2FeAl (CFA) epitaxial films on MgO(001), as a function of film thickness. It was found that the epitaxial CFA films…

We measure the high magnetic field ($B$) microwave conductivity, Re$\sigma_{xx}$, of a high mobility 2D electron system containing an antidot array. Re$\sigma_{xx}$ vs frequency ($f$) increases strongly in the regime of the fractional…

介观与纳米尺度物理 · 物理学 2009-11-07 P. D. Ye , L. W. Engel , D. C. Tsui , J. A. Simmons , J. R. Wendt , G. A. Vawter , J. L. Reno

Many unconventional superconductors exhibit a common set of anomalous charge transport properties that characterize them as `strange metals', which provides hope that there is single theory that describes them. However, model-independent…

We report an investigation of transverse Hall resistance and longitudinal resistance on Pt thin films sputtered on epitaxial LaCoO$_3$ (LCO) ferromagnetic insulator films. The LaCoO$_3$ films were deposited on several single crystalline…

强关联电子 · 物理学 2015-10-14 T. Shang , Q. F. Zhan , H. L. Yang , Z. H. Zuo , Y. L. Xie , Y. Zhang , L. P. Liu , B. M. Wang , Y. H. Wu , S. Zhang , Run-Wei Li

A series of Mn$_{100-x}$Rh$_x$ ($20 \le x \le 50$) thin films were epitaxially grown on the MgO substrate using magnetron sputtering technique, and were systematically investigated by magnetization, longitudinal electrical resistivity, and…

强关联电子 · 物理学 2026-01-01 Cong Wang , Zheng Li , Jing Meng , Hui Zhang , Haoyu Lin , Jiyuan Li , Kun Zheng , Yang Xu , Tian Shang , Qingfeng Zhan

Effectively manipulating magnetism in ferromagnet (FM) thin film nanostructures with an in-plane current has become feasible since the determination of a 'giant' spin Hall effect (SHE) in certain heavy metal (HM)/FM system. Recently, both…

材料科学 · 物理学 2016-06-29 Yongxi Ou , Shengjie Shi , D. C. Ralph , R. A. Buhrman
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