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Charge transport is well understood in both highly ordered materials (band conduction) or highly disordered ones (hopping conduction). In moderately disordered materials -- including many organic semiconductors -- the approximations valid…

化学物理 · 物理学 2021-06-16 Daniel Balzer , Thijs J. A. M. Smolders , David Blyth , Samantha N. Hood , Ivan Kassal

We show that the common local Monte Carlo rules used to simulate the motion of driven flux lines in disordered media cannot capture the interplay between elasticity and disorder which lies at the heart of these systems. We therefore discuss…

无序系统与神经网络 · 物理学 2009-11-07 Alberto Rosso , Werner Krauth

The Chord Length Sampling (CLS) algorithm is a powerful Monte Carlo method that models the effects of stochastic media on particle transport by generating on-the-fly the material interfaces seen by the random walkers during their…

统计力学 · 物理学 2018-03-14 Colline Larmier , Adam Lam , Patrick Brantley , Fausto Malvagi , Todd Palmer , Andrea Zoia

At low injection or low temperatures, electron transport in disordered semiconductors is dominated by phonon-assisted hopping between localized states. A very popular approach to this hopping transport is the Miller-Abrahams model that…

无序系统与神经网络 · 物理学 2023-06-16 Abel Thayil , Marcel Filoche

We consider the problem of electron transport along a one-dimensional disordered multiple-scattering conductor, and study the electron density for all the electronic levels. A model is proposed for the reduced density matrix of the system…

无序系统与神经网络 · 物理学 2023-03-14 Gerardo Rivas , Miztli Yepez , Pier A. Mello

Dynamic Monte Carlo simulations are used to study coupled transport (co-transport) through sub-nanometer-diameter pores. In this classic Hodgkin-Keynes mechanism, an ion species uses the large flux of an abundant ion species to move against…

软凝聚态物质 · 物理学 2013-11-27 Dezső Boda , Éva Csányi , Dirk Gillespie , Tamás Kristóf

Developing devices using disordered organic semiconductors requires accurate and practical models of charge transport. In these materials, charge transport occurs through partially delocalised states in an intermediate regime between…

化学物理 · 物理学 2023-04-18 Jacob T. Willson , William Liu , Daniel Balzer , Ivan Kassal

The electron transport in the two-dimensional gas formed in tensile-strained Si1-xGex/Si/Si1-xGex heterostructures is investigated using Monte Carlo simulation. At first the electron mobility is studied in ungated modulation doped…

介观与纳米尺度物理 · 物理学 2007-05-23 F. Monsef , P. Dollfus , S. Galdin-Retailleau , H. -J. Herzog , T. Hackbarth

The influence of ordered regions (micro crystallites and aggregates) in the other wise disordered polymer host matrix on field and temperature dependence of mobility (\mu) has been simulated. Increase in concentration of ordered regions…

无序系统与神经网络 · 物理学 2007-07-05 S. Raj Mohan , M. P. Joshi , Manoranjan P. Singh

Monte Carlo simulations are performed to study the in-plane transport of spin-polarized electrons in III-V semiconductor quantum wells. The density matrix description of the spin polarization is incorporated in the simulation algorithm. The…

介观与纳米尺度物理 · 物理学 2010-09-22 Min Shen , Semion Saikin , Ming-C. Cheng , Vladimir Privman

Random-walk Monte Carlo simulations are widely used to predict the optical properties of complex, disordered materials. In presence of large heterogeneities (e.g., spatially-extended nonscattering regions in a turbid environment), an…

光学 · 物理学 2025-04-10 Loïc Tran , Benjamin Askenazi , Kevin Vynck

We develop a new three-dimensional multiparticle Monte Carlo ({\it 3DmpMC}) approach in order to study the hopping charge transport in disordered organic molecular media. The approach is applied here to study the charge transport across an…

其他凝聚态物理 · 物理学 2009-11-11 H. Houili , E. Tutis , I. Batistic , L. Zuppiroli

We generalize a simple Monte Carlo (MC) model for dilute gases to consider the transport behavior of positrons and electrons in Percus-Yevick model liquids under highly non-equilibrium conditions, accounting rigorously for coherent…

计算物理 · 物理学 2015-04-22 W. J. Tattersall , D. G. Cocks , G. J. Boyle , R. D. White

We use first-principle Quantum Monte-Carlo (QMC) simulations and numerical exact diagonalization to analyze the low-frequency charge carrier mobility within a simple tight-binding model of molecular organic semiconductors on a…

材料科学 · 物理学 2025-07-23 Pavel Buividovich , Johann Ostmeyer , Alessandro Troisi

An exact Quantum Kinetic Monte Carlo method is proposed to calculate electron transport for 1D Fermi Hubbard model. The method is directly formulated in real time and can be applied to extract time dependent dynamics of general interacting…

材料科学 · 物理学 2018-05-07 Fei Lin , Jianqiu Huang , Celine Hin

A simple Monte Carlo procedure is described for simulating the multiple scattering and absorption of electrons with the incident energy in the range 1-50 keV moving through a slab of uniformly distributed material of given atomic number,…

材料科学 · 物理学 2007-05-23 Nima Ghal-eh , Mohammad Farhad Rahimi , Mehrnoush Manouchehri

We introduce a Monte Carlo algorithm to efficiently compute transport properties of chaotic dynamical systems. Our method exploits the importance sampling technique that favors trajectories in the tail of the distribution of displacements,…

统计力学 · 物理学 2018-05-25 Diego Tapias , David P. Sanders , Eduardo G. Altmann

An indirect, hybrid Monte Carlo discretization of general relativistic kinetic theory suitable for the development of numerical schemes for radiation transport is presented. The discretization is based on surface flux estimators obtained…

天体物理学 · 物理学 2012-12-12 Burkhard Zink

Monte Carlo switching moves ("perturbations") are defined between two or more classical Hamiltonians sharing a common ground-state energy. The ratio of the density of states (DOS) of one system to that of another is related to the ensemble…

计算物理 · 物理学 2012-12-27 Rasmus A. X. Persson

A theoretical investigation of quantum-transport phenomena in mesoscopic systems is presented. In particular, a generalization to ``open systems'' of the well-known semiconductor Bloch equations is proposed. The presence of spatial boundary…

介观与纳米尺度物理 · 物理学 2009-10-31 Fausto Rossi , Aldo Di Carlo , Paolo Lugli
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