相关论文: Observation of electron excitation into silicon co…
This work demonstrates photon emission gain, i.e., emission of multiple photons per injected electron, through impact excitation in Er-doped silicon light-emitting diodes (LEDs). Conventional methods for exciting Er ions in silicon suffer…
We report on the characterization of the response of windowless silicon avalanche photo-diodes to electrons in the 90-900 eV energy range. The electrons were provided by a monoenergetic electron gun present in the LASEC laboratories of…
The study of hexagonal silicon polytypes attracts special attention due to their unique physical properties compared to the traditional cubic phase of Si. Thus, for some hexagonal phases, a significant improvement in the emission properties…
Using the photon-ion merged-beams technique at a synchrotron light source, we have measured relative cross sections for single and up to five-fold photoionization of Fe$^{2+}$ ions in the energy range 690--920 eV. This range contains…
Silicon avalanche photodiodes are the most sensitive photodetectors in the visible to near infrared region. However, when they are used for single photon detection in a Geiger mode, they are known to emit light on the controlled breakdown…
Experimental and theoretical results are presented for double, triple, and quadruple photoionization of Si$^+$ and Si$^{2+}$ ions and for double photoionization of Si$^{3+}$ ions by a single photon. The experiments employed the photon-ion…
We present experimental and modeling studies of UV nanosecond pulsed laser desorption and ablation of (111) bulk silicon. The results involve a new approach to the analysis of plume formation dynamics under high-energy photon irradiation of…
Single rare-earth ions in solids show great potential for quantum applications, including single photon emission, quantum computing, and high-precision sensing. However, homogeneous linewidths observed for single rare-earth ions are orders…
Semiconducting Barrier Discharges (SeBDs) generate uniform ionization waves in air at atmospheric pressure. In this work, we investigate how externally applied irradiation synchronized with the discharge can mimic photoconductive-type…
We develop ZnO/p-Si photodetectors by atomic layer deposition (ALD) of ZnO thin films on laser-microstructured silicon and we investigate their electrical and optical behavior, demonstrating high sensitivity and broadband operation.…
In this paper evolution of silicon surface topography, under low energy ion bombardment, is investigated at higher oblique incident angles in the range of 63\degree-83\degree. Si(100) substrates were exposed to 500 eV argon ions. Different…
The peculiarities of electric current in high-resistance materials, such as semiconductors or semimetals, irradiated by ion beams are considered. It is shown that after ion--beam irradiation an unusual electric current may arise directed…
Silicon carbide (SiC) is a wide band gap semiconductor and an attractive candidate for applications in harsh environments such as space, fusion, or future high luminosity colliders. Due to the large band gap, the leakage currents in SiC…
It is shown experimentally that the photodetachment yield of surplus electrons created by plasma-induced charging of non-conductive surfaces of dielectric materials depends on the initial surface charge density and do not correlate with the…
The bottleneck in achieving fully integrated silicon photonics lies in silicon-based light-emitting devices that are compatible with standard CMOS technology. Dislocation loops by implanting boron into silicon and annealing represents an…
The production of negative ions in cesium sputter ion sources is generally considered to be a pure surface process. It has been recently proposed that ion pair production could explain the higher-than-expected beam currents extracted from…
We present a direct experimental evidence of photo-ionized CdTe quantum dot core having luminescence "off" state at band-edge photo-excitation. We use the autocorrelation of fluorescence fluctuations from dilute colloidal solution of CdTe…
Er doped Si light emitting diodes may find important applications in the generation and storage of quantum information. These diodes exhibit an emission efficiency two orders of magnitude higher at reverse bias than forward bias due to…
We present experiments demonstrating trajectory-dependent electronic excitations at low ion velocities, where ions are expected to primarily interact with delocalized valence electrons. The energy loss of H$^+$, H$_2 ^+$, He$^+$, B$^+$,…
For the past two and a half decades, anomalous heating of trapped ions from nearby electrode surfaces has continued to demonstrate unexpected results. Caused by electric-field noise, this heating of the ions' motional modes remains an…