相关论文: Introduction of spin-orbit interaction into graphe…

The realization of a viable semiconductor transistor and information processing devices based on the electron spin has fueled intense basic research of three key elements: injection, detection, and manipulation of spins in the semiconductor…

Using a semiclassical approach that simultaneously incorporates the spin Hall effect (SHE), spin diffusion, quantum well states, and interface spin-orbit coupling (SOC), we address the interplay of these mechanisms as the origin of the…

Spin orbit coupling (SOC) is the key to realizing time-reversal invariant topological phases of matter. Famously, SOC was predicted by Kane and Mele to stabilize a quantum spin Hall insulator; however, the weak intrinsic SOC in monolayer…

The intrinsic orbital Hall effect (OHE), the orbital counterpart of the spin Hall effect, was predicted and studied theoretically for more than one decade, yet to be observed in experiments. Here we propose a strategy to convert the orbital…

The effect of spin-orbit interaction on electron transport properties of a cross-junction structure is studied. It is shown that it results in spin polarization of left and right outgoing electron waves. Consequently, incoming electron wave…

Using the Green function formalism we calculate a current-induced spin polarization of weakly magnetized graphene with Rashba spin-orbit interaction. In a general case, all components of the current-induced spin polarization are nonzero,…

van der Waals heterostructures assembled from atomically thin crystals are ideal model systems to study spin-orbital coupled transport because they exhibit a strong interplay between spin, lattice and valley degrees of freedom that can be…

Strong spin-orbit interaction (SOI) in graphene grown on tungsten disulfide (WS2) has been recently observed, leading to energy gap opening by SOI. Energy gap in graphene may also be induced by sublattice symmetry breaking (SSB) where…

Spin--orbit interaction (SOI) plays a fundamental role in many low-dimensional semiconductor and hybrid quantum devices. In the rapidly evolving field of semiconductor spin qubits, SOI is an essential ingredient that can allow for ultrafast…

Intrinsic contribution to the spin Hall effect in a two-dimensional silicene is considered theoretically within the linear response theory and Green function formalism. When an external voltage normal to the silicene plane is applied, the…

Inverse spin Hall effect (ISHE) allows the conversion of pure spin current into charge current in nonmagnetic materials (NM) due to spin-orbit interaction (SOI). In ferromagnetic materials (FM), SOI is known to contribute to anomalous Hall…

We analyze the contribution of the inhomogeneous magnetic field induced by an electrical current to the spin Hall effect in metals. The Zeeman coupling between the field and the electron spin leads to a spin dependent force, and to spin…

We calculate spin Hall conductivities in the two dimensional electron systems with Rashba spin-orbit interaction. The salient feature is that, apart from the usual spin-Hall conductivity \sigma^z_{xy} which corresponds to the induction of…

The preservation and manipulation of a spin state mainly depends on the strength of the spin-orbit interaction. For pristine graphene, the intrinsic spin-orbit coupling (SOC) is only in the order of few ueV, which makes it almost impossible…

The spin Hall effect is a phenomenon that an electric field induces a spin Hall current. In this Letter, we examine the inverse effect that, in a ferromagnetic conductor, a charge Hall current is induced by a spin motive force, or a…

The proximity-induced spin-orbit coupling (SOC) in heterostructures of twisted graphene and topological insulators (TIs) Bi$_2$Se$_3$ and Bi$_2$Te$_3$ is investigated from first principles. To build commensurate supercells, we strain…

We present a comprehensive review of recent developments in Spin Orbit Interactions (SOIs) of light in photonic materials. In particular, we highlight progress on detection of Spin Hall Effect (SHE) of light in hyperbolic metamaterials and…

This article shows that the spin-to-charge current conversion in single-layer graphene (SLG) by means of the inverse Rashba-Edelstein effect (IREE) is made possible with the integration of this remarkable 2D-material with the unique…

Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration or proximity with a van der Waals material. As it is expected that such enhancement gives rise to a sizeable spin Hall effect, a spin-to-charge…

We derive the interatomic spin-orbit interaction (SOI) from a helical atomic chain composed of $p$-orbitals with intra-atomic SOI, which exhibits a helical state--a potential origin of the chiral-induced spin selectivity (CISS) effect. In…