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相关论文: Electron-hole doping asymmetry of Fermi surface re…

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We investigate the asymmetry between electron and hole doping in a 2D Mott insulator, and the resulting competition between antiferromagnetism (AF) and d-wave superconductivity (SC), using variational Monte Carlo for projected wave…

强关联电子 · 物理学 2009-11-13 Sandeep Pathak , Vijay B. Shenoy , Mohit Randeria , Nandini Trivedi

Understanding the similarities and differences between adding or removing electrons from a charge-transfer insulator may provide insights about the origin of the electron-hole asymmetry found in cuprates. Here we study with cellular…

强关联电子 · 物理学 2025-01-08 G. Sordi , G. L. Reaney , N. Kowalski , P. Sémon , A. -M. S. Tremblay

We report density functional calculations of the electronic structure and Fermi surface of the BaFe$_2$As$_2$ and LiFeAs phases including doping via the virtual crystal approximation. The results show that contrary to a rigid band picture,…

超导电性 · 物理学 2008-09-19 D. J. Singh

We compute high-resolution angle-resolved photoemission spectroscopy of the Hubbard model using the unbiased determinant quantum Monte Carlo algorithm, revealing an asymmetry between electron and hole doping. Electron doping exhibits more…

强关联电子 · 物理学 2025-06-23 Wen O. Wang , Edwin W. Huang , Brian Moritz , Thomas P. Devereaux

In this work, we revisit the electron-hole asymmetry of antiferromagnetism in cuprates by studying the three-band Emery model. Using parameters relevant to La$_2$CuO$_4$, we benchmark the anti-ferromagnetic response for a large range of…

强关联电子 · 物理学 2025-11-20 Jiong Mei , Shao-Hang Shi , Ping Xu , Ziyan Chen , Hui-Ke Jin , Mingpu Qin , Zi-Xiang Li , Kun Jiang

Cluster dynamical mean field calculations based on 2, 4, 8 and 16 site clusters are used to analyze the doping-driven metal-insulator transition in the two dimensional Hubbard model. Comparison of results obtained on different clusters…

强关联电子 · 物理学 2010-10-04 Emanuel Gull , Michel Ferrero , Olivier Parcollet , Antoine Georges , Andrew J. Millis

Unravelling the nature of doping-induced transition between a Mott insulator and a weakly correlated metal is crucial to understanding novel emergent phases in strongly correlated materials. For this purpose, we study the evolution of…

强关联电子 · 物理学 2018-03-14 Yao Wang , Brian Moritz , Cheng-Chien Chen , Thomas P. Devereaux , Krzysztof Wohlfeld

The physics of doping a Mott insulator is investigated in the presence of a solid-vacuum interface. Using the embedding approach for dynamical mean field theory we show that the change in surface spectral evolution in a doped Mott insulator…

强关联电子 · 物理学 2011-07-12 Reza Nourafkan , Frank Marsiglio

We investigate the evolution of the Mott insulators in the triangular lattice Hubbard Model, as a function of hole doping $\delta$ in both the strong and intermediate coupling limits. Using the advanced density matrix renormalization group…

强关联电子 · 物理学 2022-06-17 Zheng Zhu , D. N. Sheng , Ashvin Vishwanath

We present a theoretical investigation of the effects of correlations on the electronic structure of the Mott insulator Sr$_2$IrO$_4$ upon electron doping. A rapid collapse of the Mott gap upon doping is found, and the electronic structure…

强关联电子 · 物理学 2018-04-11 Alice Moutenet , Antoine Georges , Michel Ferrero

We study the electronic structure of the doped paramagnetic insulator by finite temperature Quantum Monte-Carlo simulations for the 2D Hubbard model. Throughout we use the moderately high temperature T=0.33t, where the spin correlation…

强关联电子 · 物理学 2007-05-23 C. Groeber , M. G. Zacher , R. Eder

We study the correlated electronic structure of single-layer iridates based on structurally-undistorted Ba$_2$IrO$_4$. Starting from the first-principles band structure, the interplay between local Coulomb interactions and spin-orbit…

强关联电子 · 物理学 2015-09-02 Alexander Hampel , Christoph Piefke , Frank Lechermann

Unconventional superconductivity in molecular conductors is observed at the border of metal-insulator transitions in correlated electrons under the influence of geometrical frustration. The symmetry as well as the mechanism of the…

超导电性 · 物理学 2019-07-24 Hiroshi Watanabe , Hitoshi Seo , Seiji Yunoki

The phase diagram of the high-Tc cuprates is dominated by the Mott insulating phase of the parent compounds. As we approach it from large doping, a standard Fermi-liquid gradually turns into a bad non-Fermi liquid metal, a process which…

强关联电子 · 物理学 2014-04-29 Luca de' Medici , Gianluca Giovannetti , Massimo Capone

Ordinary doping by electrons (holes) generally means that the Fermi level shifts towards the conduction band (valence band) and that the conductivity of free carriers increases. Recently, however, some peculiar doping characteristics were…

材料科学 · 物理学 2019-03-27 Qihang Liu , Gustavo M. Dalpian , Alex Zunger

How superconductivity emerges in the vicinity of an antiferromagnetic insulating state is a long-standing issue of strong correlation physics. We study the transition from an antiferromagnetic insulator to a superconductor by hole-doping…

强关联电子 · 物理学 2022-08-16 Tianxing Ma , Da Wang , Congjun Wu

We apply the recently developed slave fermion approach to study the doped Mott insulator in the one-band Hubbard and Hubbard-Heisenberg models. Our results produce several subtle features in the electron spectra and confirm the key role of…

强关联电子 · 物理学 2023-10-19 Zhuoqing Long , Jiangfan Wang , Yi-feng Yang

We investigate the anomalous metal arising by hole doping the Mott insulating state of the periodic Anderson model. Using Dynamical Mean-Field Theory we show that, as opposed to the electron-doped case, in the hole-doped regime the…

强关联电子 · 物理学 2015-06-03 A. Amaricci , L. de Medici , G. Sordi , M. J. Rozenberg , M. Capone

We investigate the electronic structure and magnetic properties of a $J_\text{eff} = 1/2$ iridate Ca$_4$IrO$_6$ and the implications of doping electrons and holes using ab initio density functional theory. Our calculations considering…

强关联电子 · 物理学 2022-09-02 Avishek Singh , Jayita Chakraborty , Nirmal Ganguli

In a system with strong local repulsive interactions it should be more difficult to add an electron than to extract one. We make this idea precise by deriving various exact sum rules for the one-particle spectral function independent of the…

强关联电子 · 物理学 2009-11-10 Mohit Randeria , Rajdeep Sensarma , Nandini Trivedi , Fu-Chun Zhang
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