相关论文: Response of a spin valve to a spin battery

It is shown that spin valves under suitable symmetry conditions exhibit an ON-OFF response to a spin battery. While a spin valve driven by a charge battery displays the usual GMR (Giant Magneto-Resistance), a pure spin current or pure spin…

We show that engineering of tunnel barriers forming at the interfaces of a one-dimensional spin valve provides a viable path to a strong gate-voltage tunability of the magnetoresistance effect. In particular, we investigate theoretically a…

We measure the giant magnetoresistance (GMR) with the current both parallel and perpendicular to the direction of the magnetization in the ferromagnetic (FM) layers and thus probe the anisotropy of the effective mean free paths for the…

The resistance of CPP spin valve is a continuous function of the angle $\theta $ between the magnetizations of both ferromagnets. We use the cicuit theory for non-collinear magnetoelectronics to compute the angular magnetoresistance of CPP…

We develop a theory for spin transport and magnetization dynamics in a quantum-dot spin valve, i.e., two magnetic reservoirs coupled to a quantum dot. Our theory is able to take into account effects of strong correlations. We demonstrate…

A hybrid ferromagnet-superconductor spin valve is proposed. Its operation relies on the interplay between nonequilibrium transport and proximity-induced exchange coupling in superconductors. Huge tunnel magnetoresistance values as large as…

Nanoscale multifunctional perpendicular organic spin valves have been fabricated. The devices based on an La$_{0.7}$Sr$_{0.3}$MnO$_3$/Alq$_3$/Co trilayer show resistive switching of up to 4-5 orders of magnitude and magnetoresistance as…

We theoretically study the magnetoresistance of a CPP-GMR system with current confined paths (CCP) in the framework of Valet-Fert theory. The continuity equations for charge and spin currents are numerically solved with the…

We introduce a new class of spintronics devices in which a spin-valve like effect results from strong spin-orbit coupling in a single ferromagnetic layer rather than from injection and detection of a spin-polarized current by two coupled…

Spin valves based on materials in which the spin-flip is suppressed by the spatial separation of charge carriers, while maintaining electric neutrality in the valve volume, are considered. The possibility of using these valves as electric…

A large spin-dependent and electric field-tunable magnetoresistance of a two-dimensional electron system (2DES) is a key ingredient for the realization of many novel concepts for spin-based electronic devices. The low magnetoresistance…

We calculate the spin-polarized electronic transport through a molecular bilayer spin valve from first principles, and establish the link between the magnetoresistance and the spin-dependent inter- actions at the metal-molecule interfaces.…

It is shown that the current-perpendicular-to-plane giant magneto-resistance (CPP-GMR) oscillations, in the ballistic regime, are strongly correlated with those of the exchange coupling (J). Both the GMR and J are treated on equal footing…

Spin Hall magnetoresistance (SMR) refers to a resistance change in a metallic film reflecting the magnetization direction of a magnet attached to the film. The mechanism of this phenomenon is spin exchange between conduction-electron spins…

The giant magnetoresistance (GMR) of ferromagnetic bilayers with a superconducting contact (F1/F2/S) is calculated in ballistic and diffusive regimes. As in spin-valve, it is assumed that the magnetization in the two ferromagnetic layers F1…

The mode dependence of current-induced magnetic excitations in spin valves is studied theoretically. The torque exerted on the magnetization by transverse spin currents as well as the Gilbert damping constant are found to depend strongly on…

We report the observation of the spin valve effect in (Ga,Mn)As/p-GaAs/(Ga,Mn)As trilayer devices. Magnetoresistance measurements carried out in the current in plane geometry reveal positive magnetoresistance peaks when the two…

Magnetic and transport properties are explored in the current perpendicular-to-plane (CPP) spin salves with Cr doped wide band gap semiconductor ZnTe as one of the ferromagnetic electrodes. A negative magnetoresistance is observed in these…

A superconducting double spin valve device is proposed. Its operation takes advantage of the interplay between the spin-filtering effect of ferromagnetic insulators and superconductivity-induced out-of-equilibrium transport. Depending on…

The electric resistance of ferromagnet/normal-metal/ferromagnet perpendicular spin valves depends on the relative angle between the magnetization directions. In contrast to common wisdom, this angular magnetoresistance is found to be not…