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相关论文: Pressure-Induced Confined Metal from the Mott Insu…

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We report a first-order phase transition at T_M=357 K in single crystal Ca_2RuO_4, an isomorph to the superconductor Sr_2RuO_4. The discontinuous decrease in electrical resistivity signals the near destruction of the Mott insulating phase…

强关联电子 · 物理学 2009-10-31 C. S. Alexander , G. Cao , V. Dobrosavljevic , E. Lochner , S. McCall , J. E. Crow , R. P. Guertin

The superconducting pyrochlore oxide Cd2Re2O7 (Tc = 1 K), which is now considered as a candidate of the spin-orbit-coupled metal, shows an inversion-symmetry-breaking structural transition at Ts1 = 200 K. Ts1 decreases with increasing…

强关联电子 · 物理学 2018-04-30 Yasuhito Matsubayashi , Takumi Hasegawa , Norio Ogita , Jun-ichi Yamaura , Zenji Hiroi

The magnetic field-induced superconductor-insulator-metal transition (SIMT) in partially deuterated $\kappa$-(BEDT-TTF)$_2$Cu[N(CN)$_2$]Br, which is just on the Mott boundary, has been observed using the infrared magneto-optical imaging…

A series of polycrystalline samples of Sr2-xIrO4 have been synthesized by a solid-state reaction method. The crystal structure of this doped system can be explained on the basis of the extended nature of 5d electrons and strontium vacancies…

强关联电子 · 物理学 2016-11-09 Jimei Kong , S. L. Liu , Jie Cheng , Haiyun Wang , Xing ao Li , Z. H. Wang

We present measurements of the optical spectra on single crystals of spinel-type compound \cis. This material undergoes a sharp metal-insulator transition at 230 K. Upon entering the insulating state, the optical conductivity shows an…

强关联电子 · 物理学 2009-11-10 N. L. Wang , G. H. Cao , P. Zheng , G. Li , Z. Fang , T. Xiang , H. Kitazawa , T. Matsumoto

Motivated by recent experimental studies that have found signatures of a correlated insulator phase and tuning superconductivity in twisted bilayer graphene, we study the temperature-dependent conductivity, the spin correlation and the…

强关联电子 · 物理学 2020-04-22 Wanying Chen , Yonghuan Chu , Tongyun Huang , Tianxing Ma

The layered 5d transition metal oxides like Sr2IrO4 have attracted significant interest recently due to a number of exotic and new phenomena induced by the interplay between the spin-orbit coupling, bandwidth W and on-site Coulomb…

We report the first observation of a pressure-induced transition from a superconducting (SC) to an insulating (I) phase in single-crystal Ba1-xKxBiO3 (x = 0.4, 0.43, 0.52, and 0.58) superconductors. X-ray diffraction measurements conducted…

Electrons in correlated insulators are prevented from conducting by Coulomb repulsion between them. When an insulator-to-metal transition is induced in a correlated insulator by doping or heating, the resulting conducting state can be…

To examine the insulating mechanism of 5$d$ transition metal oxide Sr$_2$IrO$_4$, we study the ground state properties of a three-orbital Hubbard model with a large relativistic spin-orbit coupling on a square lattice. Using a variational…

强关联电子 · 物理学 2014-09-22 Hiroshi Watanabe , Tomonori Shirakawa , Seiji Yunoki

A new iridium containing layered cuprate material, IrSr_2Sm_{1.15}Ce_{0.85}Cu_{2.175}O_{10, has been synthesized by conventional ambient-pressure solid-state techniques. The material's structure has been fully characterized by Rietveld…

材料科学 · 物理学 2012-09-22 R. H. Colman , A. C. Mclaughlin

In addition to its promising potential for applications, GaV4S8 shows very interesting physical properties with temperature and magnetic field. These properties can be tuned by applying hydrostatic pressure in order to reveal and understand…

We discuss the notions of spin-orbital polarization and ordering in paramagnetic materials, and address their consequences in transition metal oxides. Extending the combined density functional and dynamical mean field theory scheme to the…

强关联电子 · 物理学 2014-12-16 Cyril Martins , Markus Aichhorn , Loig Vaugier , Silke Biermann

The temperature and pressure dependent electrical resistivity rho(T,P) studies have been performed on BaMn2As2 single crystal in the 4.2 to 300 K range upto of 8.2 GPa to investigate the evolution of its ground state properties. The rho(T)…

强关联电子 · 物理学 2015-05-30 A. T. Satya , Awadhesh Mani , A. Arulraj , N. V. Chandra Shekar , K. Vinod , C. S. Sundar , A. Bharathi

The infrared transmission measurement was performed for a two-dimensional spin-orbit coupling induced Mott insulator Sr$_{2}$IrO$_{4}$ with a layered-perovskite structure. A phonon-assisted magnon mode was observed at around 1870 cm$^{-1}$…

强关联电子 · 物理学 2015-06-12 Yasuyuki Hirata , Hiroyuki Tajima , Kenya Ohgushi

Metal-to-insulator transitions (MITs), particularly near room temperature, have been extensively studied in nonmagnetic and conventional ferromagnetic and antiferromagnetic systems, yet the co-emergence of MIT and altermagnetism (AM)…

We present results of combined density functional theory plus dynamical mean-field theory (DFT+DMFT) calculations, which show that the Mott insulator LaTiO3 undergoes an insulator-to-metal transition under compressive epitaxial strain of…

强关联电子 · 物理学 2014-04-17 Krzysztof Dymkowski , Claude Ederer

The synergy of strong spin-orbit coupling and electron-electron interactions gives rise to unconventional topological states, such as topological Mott insulator, Weyl semimetal, and quantum spin liquid. In this study, we have grown single…

强关联电子 · 物理学 2024-07-18 Harish Kumar , M. Köpf , P. Telang , N. Bura , A. Jesche , P. Gegenwart , C. A. Kuntscher

Metal-insulator transition (MIT) is one of the most conspicuous phenomena in correlated electron systems. However such transition has rarely been induced by an external magnetic field as the field scale is normally too small compared with…

强关联电子 · 物理学 2020-12-02 Guangqiang Wang , Guoqing Chang , Huibin Zhou , Wenlong Ma , Hsin Lin , M. Zahid Hasan , Su-Yang Xu , Shuang Jia

We present a new type of colossal magnetoresistance (CMR) arising from an anomalous collapse of the Mott insulating state via a modest magnetic field in a bilayer ruthenate, Ti-doped Ca$_3$Ru$_2$O$_7$. Such an insulator-metal transition is…

强关联电子 · 物理学 2018-02-14 M. Zhu , J. Peng , T. Zou , K. Prokes , S. D. Mahanti , T. Hong , Z. Q. Mao , G. Q. Liu , X. Ke