相关论文: Simulation study of a new InGaN p-layer free Schot…

We analysed self-consistently photoconversion efficiency of direct-gap A3B5 semicon-ductors based solar cells and optimised their main physical characteristics. Using gallium ar-senide (GaAs) as the example and new efficient optimization…

Silicon photonics has many attractive features but faces a major issue: inefficient and slow photodetection in the telecom range. New metal-semiconductor Schottky photodetectors based on intraband absorption address this problem, but their…

One effective way to prevent toxicity and improve the stability of materials for photovoltaic applications is to exclude lead and organic molecules from perovskite materials. Specifically, the CsSn1-xGexI3 appears to be a promising…

Non-planar solar-cell devices have been promoted as a means to enhance current collection in absorber materials with charge-transport limitations. This work presents an analytical framework for assessing the ultimate performance of…

This work presents the electrostatic analysis of a novel Ga$_2$O$_3$ vertical Schottky diode with three different guard ring configurations to reduce the peak electric field at the metal edges. Highly doped p-type GaN, p-type nonpolar AlGaN…

Multijunction solar cell design is guided by both the theoretical optimal bandgap combination as well as the realistic limitations to materials with these bandgaps. For instance, triple-junction III-V multijunction solar cells commonly use…

In this paper we carried out theoretical study of the general issues related to the efficiency of SiC:H/a-Si:H single- and multi-junction tandem solar cells. Implementation of numerical simulations by the use of AMPS-1D program of…

SCAPS 1-D was used for the simulation of lead-free environmentally benign methylammonium tin-iodide (CH3NH3SnI3) based solar cell. Indium sulphide (In2S3) was utilized as the electron transport layer (ETL) for its high carrier mobility and…

Effect of geometrical and structural parameters on the efficiency of the tandem solar cell based on the III-V nanowire array on silicon is studied by the means of coupled opto-electrical simulations. A close to realistic structure,…

Tin perovskites are the most promising environmentally friendly alternative to lead perovskites. Among tin perovskites, FASnI3 (CH4N2SnI3) shows optimum band gap, and easy processability. However, the performance of FASnI3 based solar cells…

The present paper discusses the influence of Tin Sulphide's grain size on the performance of ITO/PEDOT:PSS/SnS/Al structured solar cells fabricated by thermal evaporation. The grain sizes were maintained in the range of 11-18~nm by…

White light emitting diodes based on III-nitride InGaN/GaN quantum wells currently offer the highest overall efficiency for solid state lighting applications. Although current phosphor-converted white LEDs have high electricity-to-light…

Conventional photovoltaic machinery, including traditional silicone panels, fails to address efficiency problems. Recent technological advances suggest less metal-specific reliance, but plastic substrates are bound by cost-inefficiency.…

InGaN light-emitting diodes (LEDs) are more efficient and cost effective than incandescent and fluorescent lighting, but lattice mismatch limits the thickness of InGaN layers that can be grown on GaN without performance-degrading…

Here, we propose titanium nitride (TiN) as an alternative plasmonic material for an on-chip silicon plasmonic Schottky photodetector that is based on an internal photoemission process and operating at telecom wavelengths. The examined…

Perovskite semiconductors have demonstrated outstanding external luminescence quantum yields, enabling high power conversion efficiencies (PCE). However, the precise conditions to advance to an efficiency regime above monocrystalline…

The Schottky diode, BN/GaN layered composite contacting to bulk aluminum, is theoretically plausible to harvest wireless energy above X-band. According to our first principle calculation, the insertion of GaN layers dramatically influences…

Schottky barrier height and the ideality factor $\eta$ are established for the first time in the single phase (Ga,Mn)N using a vertical geometry device. The material has been heteroepitaxially grown on commercially available low threading…

Silicon solar cells dominate the solar cell market with record lab efficiencies reaching almost 26%. However, after 60 years of research, this efficiency saturated close to the theoretical limit for silicon, and radically new approaches are…

Mott-Schottky analysis is adapted to determine the built-in bias (Vbi) and doping density (N) of lead sulfide-zinc oxide colloidal quantum dot heterojunction solar cells. We show that charge injection barriers at the solar cell's electrodes…