相关论文: Frequency dependent dielectric properties of Al/ m…

Magnetic dc susceptibility between 1.5 and 800 K, ac susceptibility and magnetization, thermodynamic properties, temperature dependence of radio and audio-wave dielectric constants and conductivity, contact-free dielectric constants at…

The AC conductivity response in a broad frequency range of disordered materials is of great interest not only for technological applications, but also from a theoretical point of view. The Jonscher power exponent value, and its temperature…

A model for Metal-Ferroelectric-Metal structures with Schottky contacts is proposed. The model adapts the general theories of metal-semiconductor rectifying contacts for the particular case of metal-ferroelectric contact by introducing: the…

The effect of improved dielectric properties in the presence of an applied magnetic field is discussed in Pr doped polycrystalline Gd$_{0.55}$Pr$_{0.45}$MnO$_3$ complemented by the structural properties down to 50 K and magnetic properties.…

Metal-oxide-semiconductor field-effect transistors (MOSFET's) using atomic-layer-deposited (ALD) Al$_2$O$_3$ as the gate dielectric are fabricated on the Si/Si$_{1-x}$Ge$_x$ heterostructures. The low-temperature carrier density of a…

Materials with high dielectric constant are in great demand for the miniaturization of electronic devices. More specifically, high dielectric constant polymer-ceramic composites are useful for embedded capacitor applications. A composite…

We report the temperature dependent dielectric properties and impedance spectroscopy investigation of Na$_3$Zr$_2$Si$_2$PO$_{12}$ in the frequency range of 20 Hz--2 MHz. The Rietveld refinement of x-ray diffraction pattern confirms the…

Phosphorene is a unique single elemental semiconductor with two-dimensional layered structures. In this letter, we study the transistor behavior on mechanically exfoliated few-layer phosphorene with the top-gate. We achieve a high…

This paper presents a first-principles study of the Debye-Waller factor and the Debye temperature for amorphous silicon ($a$-Si) from lattice-dynamical calculations and direct molecular-dynamics simulations using density-functional theory…

Schottky barrier contact has been fabricated by thermal deposition of Al on (100) Ge (impurity concentration~1010/cm3 at 80K) that shows extrinsic p-type to intrinsic n-type transition near 180K. Both p and n-type Ge exhibits ideal Schottky…

The temperature dependence of AC susceptibility (ACS) has been measured for a very high-quality plate-like slightly overdoped YBCO single crystal for different frequencies and AC magnetic field amplitudes. Frequency dependence of the ACS is…

Dirac and Weyl semimetals with linearly crossing bands are the focus of much recent interest in condensed matter physics. Although they host fascinating phenomena, their physics can be understood in terms of weakly interacting electrons. In…

We have studied the metallic behaviour in low density GaAs hole systems, and Si electron systems, close to the apparent two-dimensional metal-insulator transition. Two observations suggest a semi-classical origin for the metallic-like…

PbZr0.52Ti0.48O3/La0.67Sr0.33MnO3(PZT/LSMO) bilayer with surface roughness ~ 1.8 nm thin films have been grown by pulsed laser deposition on LaAlO3(LAO) substrates. High remnant polarization (30-54 micro C/cm2), dielectric…

Interfacial Dzyaloshinskii-Moriya interaction (iDMI) has been investigated in Co2FeAl (CFA) ultrathin films of various thicknesses (0.8 nm<tCFA<2 nm) grown on Si substrates, using Pt, W, Ir and MgO buffer or/and capping layers. Vibrating…

A modified model of metal-semiconductor contacts is applied to analyze the capacitance-voltage and current-voltage characteristics of metal-ferroelectric-metal structures. The ferroelectric polarization is considered as a sheet of surface…

We employ gauge/gravity duality to study the effects of Lifshitz scaling on the holographic $p$ wave superconductors in the presence of Born-Infeld (BI) nonlinear electrodynamics. By using the shooting method in the probe limit, we…

The 0.5(BiGdxFe1-xO3)-0.5(PbZrO3) composite was synthesized using a high temperature solid-state reaction technique. Preliminary X-ray structural analysis confirms the formation of the composite. The dielectric constant and loss tangent…

Dynamic dielectric and mechanical responses of the microcomposites of the ferroelastic-dielectric type were studied in this paper. The mechanical inclusions-matrix interactions have influence on the mechanical moduli of the composite. We…

The dielectric constant or relative permittivity of a dielectric material, which describes how the net electric field in the medium is reduced with respect to the external field, is a parameter of critical importance for charging and…