相关论文: Resonant tunneling spectroscopy of valley eigensta…

Recent experiments on silicon nanostructures have seen breakthroughs toward scalable, long-lived quantum information processing. The valley degree of freedom plays a fundamental role in these devices, and the two lowest-energy electronic…

The problem of resonant transport of strongly interacting electrons through a one-dimensional single-level vibrating quantum dot is being considered. In this paper, we generalize the Komnik and Gogolin model [Phys. Rev. Lett., 90, 246403,…

We analyze experimentally and theoretically the transport spectra of a gated lateral GaAs double quantum dot containing two holes. The strong spin-orbit interaction present in the hole subband lifts the Pauli spin blockade and allows to map…

Using renormalization group techniques, we study spectral and transport properties of a spinless interacting quantum dot consisting of two levels coupled to metallic reservoirs. For strong Coulomb repulsion $U$ and an applied Aharonov-Bohm…

We study the conditions for a double quantum dot system to work as a reliable electron spin entangler, and the efficiency of a beam splitter as a detector for the resulting entangled electron pairs. In particular, we focus on the relative…

In this paper, we investigate the quantum transport of a double quantum dot coupled with a nanomechanical resonator at arbitrary strong electron-phonon coupling regimes. We employ the generalized quantum master equation to study full…

We study the two-qubit controlled-not gate operating on qubits encoded in the spin state of a pair of electrons in a double quantum dot. We assume that the electrons can tunnel between the two quantum dots encoding a single qubit, while…

Manipulation of the spin-states of a quantum dot by purely electrical means is a highly desirable property of fundamental importance for the development of spintronic devices such as spin-filters, spin-transistors and single-spin memory as…

We have investigated the transport characteristics of an electron pump consisting of an asymmetric double quantum dot at zero bias voltage which is subject to electromagnetic radiation. Depending on the energies of the intermediate states…

Semiconductor spin qubits have gained increasing attention as a possible platform to host a fault-tolerant quantum computer. First demonstrations of spin qubit arrays have been shown in a wide variety of semiconductor materials. The highest…

We report on low-temperature electronic transport measurements of a silicon metal-oxide-semiconductor quantum dot, with independent gate control of electron densities in the leads and the quantum dot island. This architecture allows the dot…

Using real-time charge sensing and gate pulsing techniques we measure the ratio of the rates for tunneling into the excited and ground spin states of a single-electron AlGaAs/GaAs quantum dot in a parallel magnetic field. We find that the…

Two-qubit quantum gates play an essential role in quantum computing, whose operation critically depends on the entanglement between two qubits. Resonantly driven controlled-NOT (CNOT) gates based on silicon double quantum dots (DQDs) are…

A theory of resonant spin-dependent tunneling has been developed for symmetrical double-barrier structures grown of non-centrosymmetrical semiconductors. The dependence of the tunneling transparency on the spin orientation and the wave…

We study the counting statistics for electrons and photons being emitted from a driven two level quantum dot. Our technique allows us to calculate their mutual correlations as well. We study different transport configurations by tuning the…

Reliable detection of single electron tunneling in quantum dots (QD) is paramount to use this category of device for quantum information processing. Here, we report charge sensing in a degenerately phosphorus-doped silicon QD by means of a…

We consider the form of the current-voltage curves generated when tunneling spectroscopy is used to measure the energies of individual electronic energy levels in nanometer-scale systems. We point out that the voltage positions of the…

A few-electron double quantum dot was fabricated using metal-oxide-semiconductor(MOS)-compatible technology and low-temperature transport measurements were performed to study the energy spectrum of the device. The double dot structure is…

We study the two-electron eigenspectrum of a carbon-nanotube double quantum dot with spin-orbit coupling. Exact calculation are combined with a simple model to provide an intuitive and accurate description of single-particle and interaction…

We investigate the effect of a quantised vibrational mode on electron tunneling through a chain of three quantum dots. The outer dots are coupled to voltage leads, but the position of the central dot is not rigidly fixed. Motion of the…