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相关论文: Strong Spin Hall Effect in the Antiferromagnet PtM…

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Spin-orbit-torque-driven auto-oscillations in spin Hall nano-oscillators (SHNOs) offer a transformative pathway toward energy-efficient, nanoscale microwave devices for next-generation neuromorphic computing and high-frequency technologies.…

Large charge-to-spin conversion (spin Hall angle) and spin Hall conductivity are prerequisites for development of next generation power efficient spintronic devices. In this context, heavy metals (e.g. Pt, W etc.), topological insulators,…

The unique features of ultrafast spin dynamics and the absence of macroscopic magnetization in antiferromagnetic (AFM) materials provide a distinct route towards high-speed magnetic storage devices with low energy consumption and high…

We investigate the spin-current transport through antiferromagnetic insulator (AFMI) by means of the spin-Hall magnetoressitance (SMR) over a wide temperature range in Pt/NiO/Y$_3$Fe$_5$O$_{12}$ (Pt/NiO/YIG) heterostructures. By inserting…

Ferromagnetic pyrochlore and spinel materials with topological flat bands are of interest for their potential to exhibit a giant anomalous Hall effect (AHE). In this work, we present computational predictions of stability and electronic…

Ferroelectric Rashba semiconductors (FERSC) have recently emerged as a promising class of spintronics materials. The peculiar coupling between spin and polar degrees of freedom responsible for several exceptional properties, including…

材料科学 · 物理学 2019-07-10 H. Wang , P. Gopal , S. Picozzi , S. Curtarolo , M. Buongiorno Nardelli , J. Slawinska

We theorize the spin Hall effect of light (SHEL) on a nano-metal film and demonstrate it experimentally via weak measurements. A general propagation model to describe the relationship between the spin-orbit coupling and the thickness of the…

光学 · 物理学 2012-04-27 Xinxing Zhou , Zhicheng Xiao , Hailu Luo , Shuangchun Wen

Magnetotransport properties of spin-glass-like Ge/1-x-y/Sn/x/Mn/y/Te mixed crystals with chemical composition changing in the range of 0.083 < x < 0.142 and 0.012 < y < 0.119 are presented. The observed negative magnetoresistance we…

材料科学 · 物理学 2013-02-15 L. Kilanski , R. Szymczak , W. Dobrowolski , A. Podgórni , A. Avdonin , V. E. Slynko , E. I. Slynko

We study the intrinsic spin Hall effect (SHE) based on the orbitally degenerate periodic Anderson model, which is an effective model for heavy fermion systems. In the very low resistivity regime, the magnitude of the intrinsic spin Hall…

强关联电子 · 物理学 2010-09-29 Takuro Tanaka , Hirosho Kontani

Antiferromagnetic (AFM) skyrmions have emerged as a highly promising avenue in the realm of spintronics, particularly for the development of advanced racetrack memory devices. A distinguishing feature of AFM skyrmions is their zero…

材料科学 · 物理学 2024-03-05 Amal Aldarawsheh , Moritz Sallermann , Muayad Abusaa , Samir Lounis

The spontaneous Hall effect is usually governed by three conventional mechanisms, such as the Berry curvature, skew scattering and side jump, which widely exist in ferromagnetic or antiferromagnetic materials. However, in this work, based…

介观与纳米尺度物理 · 物理学 2022-01-04 Lei Wang , Ka Shen , Tai Min , Ke Xia

The symmetry considerations that imply a non-zero anomalous Hall effect (AHE) in certain non-collinear antiferromagnets also imply both non-zero orbital magnetization and a net spin magnetization. We have explicitly evaluated the orbital…

介观与纳米尺度物理 · 物理学 2020-04-01 Hua Chen , Tzu-Cheng Wang , Di Xiao , Guang-Yu Guo , Qian Niu , Allan H. MacDonald

Graphene is a light material for long-distance spin transport due to its low spin-orbit coupling, which at the same time is the main drawback to exhibit a sizeable spin Hall effect. Decoration by light atoms has been predicted to enhance…

We report a comprehensive study of the maximization of the spin Hall ratio ({\theta}SH) in Pt thin films by the insertion of sub-monolayer layers of Ti to decrease carrier lifetime while minimizing the concurrent reduction in the spin Hall…

材料科学 · 物理学 2019-11-13 Lijun Zhu , R. A. Buhrman

We theoretically investigate an extrinsic spin Hall effect (SHE) in semiconductor heterostructures due to the scattering by an artificial potential created by antidot, STM tip, etc. The potential is electrically tunable. First, we formulate…

介观与纳米尺度物理 · 物理学 2015-05-13 Mikio Eto , Tomohiro Yokoyama

The spin Hall effect (SHE) is normally discussed in terms of a spin current, which is ill-defined in strongly spin-orbit-coupled systems because of spin non-conservation. In this work we propose an alternative view of SHE phenomena by…

介观与纳米尺度物理 · 物理学 2019-05-16 Hua Chen , Qian Niu , Allan H. MacDonald

We experimentally investigate and quantitatively analyze the spin Hall magnetoresistance effect in ferromagnetic insulator/platinum and ferromagnetic insulator/nonferromagnetic metal/platinum hybrid structures. For the ferromagnetic…

The method proposed by us in [1], which eliminates obstacles in the application of electrical methods for studying the spin-Hall effect (SHE) by creating a spin unbalance, which generates a charge unbalance, using the form effect without…

介观与纳米尺度物理 · 物理学 2020-02-11 Yu. N. Chiang , M. O. Dzyuba

Spin chirality in metallic materials with non-coplanar magnetic order can give rise to a Berry phase induced topological Hall effect. Here, we report the observation of a large topological Hall effect in high-quality films of Mn$_{1.5}$PtSn…

The spin Hall effect (SHE) enables efficient electrical manipulation of magnetization through the spin Hall current \left(\mathbit{J}_{\mathbit{SHE}}\right), advancing energy-efficient spintronics. In parallel, the orbital Hall effect (OHE)…