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Extensive efforts have been devoted to the study of spin-orbit torque in ferromagnetic metal/heavy metal bilayers and exploitation of it for magnetization switching using an in-plane current. As the spin-orbit torque is inversely…

材料科学 · 物理学 2016-05-18 Yanjun Xu , Yumeng Yang , Kui Yao , Baoxi Xu , Yihong Wu

Synthesis of crystallographically well-defined thin films of topological materials is important for unraveling their mesoscale quantum properties and for device applications. Mn$_3$Ge, an antiferromagnetic Weyl semimetal with a chiral…

The spin Hall effect creates a spin current in response to a charge current in a material that has strong spin-orbit coupling. The size of the spin Hall effect in many materials is disputed, requiring independent measurements of the effect.…

介观与纳米尺度物理 · 物理学 2016-05-10 Joseph A. Boales , Carl T. Boone , Pritiraj Mohanty

Spin-orbit interaction (SOI) couples charge and spin transport, enabling electrical control of magnetization. A quintessential example of SOI-induced transport is the anomalous Hall effect (AHE), first observed in 1880, in which an electric…

Bismuth is an archetypal semimetal with gigantic spin-orbit coupling and it has been a major source material for the discovery of seminal phenomena in solid state physics for more than a century. In recent years, spin current transports in…

材料科学 · 物理学 2022-10-19 Guang-Yu Guo

Generally, the dissipationless Hall effect in solids requires time-reversal symmetry breaking (TRSB), where TRSB induced by external magnetic field results in ordinary Hall effect, while TRSB caused by spontaneous magnetization gives rise…

Recent findings of large anomalous Hall signal in nonferromagnetic and nonferrimagnetic materials suggest that the magnetization of the system is not a critical component for the realization of the anomalous Hall effect (AHE). Here, we…

材料科学 · 物理学 2022-12-02 Sk Jamaluddin , Roumita Roy , Amitabh Das , Sudipta Kanungo , Ajaya K. Nayak

It has been shown that the spin Hall effect from heavy transition metals can generate sufficient spin-orbit torque and further produce current-induced magnetization switching in the adjacent ferromagnetic layer. However, if the…

介观与纳米尺度物理 · 物理学 2020-04-16 Yan-Ting Liu , Tian-Yue Chen , Tzu-Hsiang Lo , Tsung-Yu Tsai , Shan-Yi Yang , Yao-Jen Chang , Jeng-Hua Wei , Chi-Feng Pai

Giant spin Hall effect (GSHE) has been observed in heavy metal materials such as Ta, Pt, and W, where spins are polarized in the surface plane and perpendicular to the charge current direction. Spins generated in these materials have…

介观与纳米尺度物理 · 物理学 2019-08-06 Terry Y. T. Hung , Avinash Rustagi , Shengjiao Zhang , Pramey Upadhyaya , Zhihong Chen

We observe the magnetic proximity effect (MPE) in Pt/CoFe2O4 bilayers grown by molecular beam epitaxy. This is revealed through angle-dependent magnetoresistance measurements at 5 K, which isolate the contributions of induced ferromagnetism…

Magnetic materials hosting topological spin textures like magnetic skyrmion exhibit nontrivial Hall effect, namely, topological Hall effect (THE). In this study, we demonstrate the emergence of THE in thin films of half-metallic perovskite…

强关联电子 · 物理学 2018-07-03 M. Nakamura , D. Morikawa , X. Z. Yu , F. Kagawa , T. Arima , Y. Tokura , M. Kawasaki

Ferrimagnets, which contain the advantages of both ferromagnets (detectable moments) and antiferromagnets (ultrafast spin dynamics), have recently attracted great attention. Here we report the optimization of epitaxial growth of a…

We report on the first example of epitaxial Mn$_{3 + \delta}$Ge thin films with a cubic $L1_2$ structure. The films are found to exhibit frustrated ferromagnetism with an average magnetization corresponding to 0.98$~\pm~$0.06$~\mu_B$/Mn,…

We have theoretically explored the intrinsic spin Hall effect (SHE) in the iron-based superconductor family with a variety of materials. The study is motivated by an observation that, in addition to an appreciable spin-orbit coupling in the…

强关联电子 · 物理学 2012-08-15 Sudhakar Pandey , Hiroshi Kontani , Dai S. Hirashima , Ryotaro Arita , Hideo Aoki

The utilization of ferromagnetic (FM) materials in thermoelectric devices allows one to have a simpler structure and/or independent control of electric and thermal conductivities, which may further remove obstacles for this technology to be…

Due to its transverse nature, spin Hall effects (SHE) provide the possibility to excite and detect spin currents and magnetization dynamics even in magnetic insulators. Magnetic insulators are outstanding materials for the investigation of…

介观与纳米尺度物理 · 物理学 2016-02-03 M. B. Jungfleisch , W. Zhang , J. Sklenar , J. Ding , W. Jiang , H. Chang , F. Y. Fradin , J. E. Pearson , J. B. Ketterson , V. Novosad , M. Wu , A. Hoffmann

While ferromagnet and topological material bilayers are widely studied to obtain efficient spin charge conversion via topological surface states (TSS), the influence of the magnetic proximity effect (MPE) on the TSS evolution and conversion…

材料科学 · 物理学 2025-07-24 Masayuki Ishida , Soichiro Fukuoka , Takahiro Chiba , Yohei Kota , Masaaki Tanaka , Le Duc Anh

Spin-orbit coupling in ferromagnets gives rise to the anomalous Hall effect and the anisotropic magnetoresistance, both of which can be used to create spin-transfer torques in a similar manner as the spin Hall effect. In this paper we show…

材料科学 · 物理学 2014-11-19 Tomohiro Taniguchi , J. Grollier , M. D. Stiles

It has been shown that W in its resistive form possesses the largest spin-Hall ratio among all heavy transition metals, which makes it a good candidate for generating efficient dampinglike spin-orbit torque (DL-SOT) acting upon adjacent…

材料科学 · 物理学 2018-01-12 Ting-Chien Wang , Tian-Yue Chen , Chun-Te Wu , Hung-Wei Yen , Chi-Feng Pai

Magnetic skyrmions are magnetic textures with topological protection, which are expected to be information carriers in future spintronic devices. In this work, we propose a scheme to implement hybrid magnetic skyrmions (HMS) in…

应用物理 · 物理学 2023-04-27 Y. Liu , T. T. Liu , Z. P. Hou , D. Y. Chen , Z. Fan , M. Zeng , X. B. Lu , X. S. Gao , M. H. Qin , J. M. Liu
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