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Monolayer transition metal dichalcogenides(2D) and zero dimensional quantum dots(QD) are known to have unique optical properties in their individual limit such as high binding energy of excitons. The combination of these two systems is of…

介观与纳米尺度物理 · 物理学 2021-07-27 Pradeepa H L

The outstanding properties of transition metal dichalcogenide (TMD) monolayers and their van der Waals (vdW) heterostructures, arising from their structure and the modified electron-hole Coulomb interaction in two-dimension, make them…

材料科学 · 物理学 2025-11-13 Steffi Y. Woo , Luiz H. G. Tizei

Atomically thin crystals of transition metal dichalcogenides (TMDs) host excitons with strong binding energies and sizable light-matter interactions. Coupled to optical cavities, monolayer TMDs routinely reach the regime of strong…

Transition metal dichalcogenides (TMDs) are layered semiconducting van der Waal crystals and promising materials for a wide range of electronic and optoelectronic devices. Realizing practical electrical and optoelectronic device…

介观与纳米尺度物理 · 物理学 2019-08-05 Hao Lee , S. Deshmukh , Jing Wen , V. Z. Costa , J. S. Schuder , M. Sanchez , A. S. Ichimura , Eric Pop , Bin Wang , A. K. M. Newaz

The optical emission efficiency of two dimensional layered transition metal dichalcogenides (TMDs) is one of the most important parameter that affects their optoelectronic performance. Optimization of growth parameters of chemical vapor…

材料科学 · 物理学 2017-06-13 Amina Zafar , Haiyan Nan , Zainab Zafar , Zhangting Wu , Jie Jiang , Yumeng You , Zhenhua Ni

The interest in obtaining high-quality monolayer transition metal dichalcogenides (TMDs) for optoelectronic device applications has been growing dramatically. However, the prevalence of defects and unwanted doping in these materials remains…

化学物理 · 物理学 2023-01-18 Zhaojun Li , Hope Bretscher , Akshay Rao

Transition metal dichalcogenide (TMD) monolayers are direct bandgap semiconductors that feature tightly bound excitons, strong spin-orbit coupling, and spin-valley degrees of freedom. Depending on the spin configuration of the electron-hole…

Engineering atomic-scale defects is crucial for realizing wafer-scale, single-crystalline transition metal dichalcogenide monolayers for electronic devices. However, connecting atomic-scale defects to larger morphologies poses a significant…

Two dimensional semiconductor such as single-layer transition metal dichalcogenides (SL-TMD) have attracted most attentions as an atomically thin layer semiconductor materials. Typically, lattice point defects (sulfur vacancy) created by…

材料科学 · 物理学 2018-10-16 Reza Shidpour , S. M. S. Movahed

Transition metal dichalcogenides (TMDs) are layered two-dimensional semiconductors explored for various optoelectronic applications, ranging from light-emitting diodes to single-photon emitters. To interact strongly with light, such devices…

介观与纳米尺度物理 · 物理学 2024-07-15 Juri G. Crimmann , Moritz N. Junker , Yannik M. Glauser , Nolan Lassaline , Gabriel Nagamine , David J. Norris

Understanding and controlling the photoexcited quasiparticle (QP) dynamics in monolayer transition metal dichalcogenides lays the foundation for exploring the strongly interacting, non-equilibrium 2D quasiparticle and polaritonic states in…

材料科学 · 物理学 2024-10-04 Akiyoshi Park , Rohit Kantipudi , Jonas Göser , Yinan Chen , Duxing Hao , Nai-Chang Yeh

Wet-chemical syntheses for quasi two-dimensional (2D) transition metal dichalcogenides (TMDs) have emerged as promising methods for straightforward solution-processing of these materials. However, photoluminescence properties of colloidal…

Monolayer transition metal dichalcogenides are promising materials for valleytronic operations. They exhibit two inequivalent valleys in the Brillouin zone, and the valley populations can be directly controlled and determined using…

介观与纳米尺度物理 · 物理学 2017-09-29 Kathleen M. McCreary , Marc Currie , Aubrey T. Hanbicki , Hsun-Jen Chuang , Berend T. Jonker

The integration of transition metal dichalcogenides (TMDs) with ferroelectric substrates is a powerful strategy to modulate their electronic and optical properties. However, the use of relaxor ferroelectrics for this purpose remains…

材料科学 · 物理学 2025-05-06 D. Hernández-Pinilla , D. Cachago , Y. A. Xia , G. López-Polín , M. O Ramírez , L. E. Bausá

Motivated by the triumph and limitation of graphene for electronic applications, atomically thin layers of group VI transition metal dichalcogenides are attracting extensive interest as a class of graphene-like semiconductors with a desired…

介观与纳米尺度物理 · 物理学 2013-04-17 Hualing Zeng , Gui-Bin Liu , Junfeng Dai , Yajun Yan , Bairen Zhu , Ruicong He , Lu Xie , Shijie Xu , Xianhui Chen , Wang Yao , Xiaodong Cui

Monolayers of transition metal dichalcogenides (TMDs) exhibit bright photoluminescence, a desirable property for light-emitting diodes and single-photon emitters. Because the emission intensity is heavily influenced by factors such as…

介观与纳米尺度物理 · 物理学 2026-01-06 Juri G. Crimmann , Sander J. W. Vonk , Yannik M. Glauser , Gabriel Nagamine , David J. Norris

Local strain engineering is an exciting approach to tune the optoelectronic properties of materials. Two dimensional (2D) materials such as 2D transition metal dichalcogenides (TMDs) are particularly well suited for this purpose because…

光学 · 物理学 2020-02-11 Ahmed Raza Khan , Teng Lu , Wendi Ma , Yuerui Lu , Yun Liu

We describe a facile technique based on polymer encapsulation to apply several percent controllable strains to monolayer and few-layer Transition Metal Dichalcogenides (TMDs). We use this technique to study the lattice response to strain…

Two-dimensional Transition-Metal Dichalcogenides (TMDs) are of great interest for second harmonic (SH) generation due to their large second-order susceptibility, atomically thin structure, and relaxed phase-matching conditions. TMDs are…

Nanotubes (NTs) of transition metal dichalcogenides (TMDs), such as MoS2 and WS2, were first synthesized more than a quarter of a century ago; nevertheless, many of their properties have so far remained basically unknown. This review…

材料科学 · 物理学 2019-07-24 T. V. Shubina , M. Remškar , V. Yu. Davydov , K. G. Belyaev , A. A. Toropov , B. Gil