相关论文: Anderson Localization of Electrons in Silicon Dono…
Donors in silicon can now be positioned with an accuracy of about one lattice constant, making it possible in principle to form donor arrays for quantum computation or quantum simulation applications. However the multi-valley character of…
We report a numerical analysis of Anderson localization in a model of a doped semiconductor. The model incorporates the disorder arising from the random spatial distribution of the donor impurities and takes account of the electron-electron…
Atomically precise placement of dopants in Si permits creating substitutional P nanowires by design. High-resolution images show that these wires are few atoms wide with some positioning disorder with respect to the substitutional Si…
Electron and nuclear spins of donor ensembles in isotopically pure silicon experience a vacuum-like environment, giving them extraordinary coherence. However, in contrast to a real vacuum, electrons in silicon occupy quantum superpositions…
Topic of the thesis is a theoretical description of the ultracold atomic gases in one- and two-dimensional optical lattices in the presence of the disorder leading to the Anderson localization. The disorder is created by interaction of the…
Anderson localization of light is a fundamental emergent phenomenon in disordered systems. In arrays of coupled waveguides, it suppresses transport and causes photons to remain localized near the excitation site as coupling disorder…
We analyze the valley composition of one electron bound to a shallow donor close to a Si/barrier interface as a function of an applied electric field. A full six-valley effective mass model Hamiltonian is adopted. For low fields, the…
Tunneling is a fundamental quantum process with no classical equivalent, which can compete with Coulomb interactions to give rise to complex phenomena. Phosphorus dopants in silicon can be placed with atomic precision to address the…
Using a random array of coupled metallic nanowires as a generic example of disordered plasmonic systems, we demonstrate that the structural disorder induces localization of light in these nanostructures at a deep-subwavelength scale. The ab…
Anderson localization is a quantum phenomenon in which disorder localizes electronic wavefunctions. In this work, we propose a new approach to study Anderson localization based on the density matrix formalism. Drawing an analogy to the…
Exchange coupling is a key ingredient for spin-based quantum technologies since it can be used to entangle spin qubits and create logical spin qubits. However, the influence of the electronic valley degree of freedom in silicon on exchange…
We present a complete theoretical treatment of Stark effects in doped silicon, whose predictions are supported by experimental measurements. A multi-valley effective mass theory, dealing non-perturbatively with valley-orbit interactions…
Anderson localization is a consequence of coherent interference of multiple scattering events in the presence of disorder, which leads to an exponential suppression of the transmission. The decay of the transmission is typically probed at a…
We provide an analytic theory of Anderson localization on a lattice with a weak short-range correlated disordered potential. Contrary to the general belief we demonstrate that even next-neighbor statistical correlations in the potential can…
The phenomenon of Anderson localization of waves in elastic systems is studied. We analyze this phenomenon in two different set of systems: disordered linear chains of harmonic oscillators and disordered rods which oscillate with torsional…
Anderson localization of electron states on graphene lattice with diagonal and off-diagonal (OD) disorder in the absence of magnetic field is investigated by using the standard finite-size scaling analysis. In the presence of diagonal…
Using the effective mass theory and the multi-valley envelope function representation, we have developed a theoretical framework for computing the single-electron electronic structure of several phosphorus donors interacting in an arbitrary…
Phonon localization is a phenomenon that influences numerous material properties in condensed matter physics. Anderson localization brings rise to localized atomic-scale phonon interferences in disordered lattices with an influence limited…
This paper extends an earlier analytical scattering matrix treatment of conductance and localization in coupled two- and three Anderson chain systems for weak disorder when evanescent states are present at the Fermi level. Such states exist…
The existence of Anderson localization, characterized by vanishing diffusion due to strong disorder, has been demonstrated in numerous ways. A systematic approach based on the Anderson quantum model of the Fermi gas in random lattices that…