中文
相关论文

相关论文: Charge Fractionalization in Oxide Heterostructures…

200 篇论文

The presence of a space charge region induces an internal electric field within the charged region that, in a ferroelectric material, would rotate the polarisations to align with the field. The strength of the induced field would therefore…

材料科学 · 物理学 2015-09-21 Wei Li Cheah , Nathaniel Ng , Rajeev Ahluwalia

A compact analytical model is developed for the mobile charge density of polar multiple channel field effect transistors. Two dimensional electron and hole gases can be potentially induced by spontaneous and piezoelectric polarization in…

应用物理 · 物理学 2026-03-30 Aias Asteris , Thai-Son Nguyen , Huili Grace Xing , Debdeep Jena

Complex oxides exhibit many intriguing phenomena, including metal-insulator transition, ferroelectricity/multiferroicity, colossal magnetoresistance and high transition temperature superconductivity. Advances in epitaxial thin film growth…

强关联电子 · 物理学 2017-06-07 Hanghui Chen , Andrew J. Millis

The perovskite SrTiO$_3$-LaAlO$_3$ structure has advanced to a model system to investigate the rich electronic phenomena arising at polar interfaces. Using first principles calculations and transport measurements we demonstrate that an…

Organic semiconductors based on small conjugated molecules generally behave as insulators when undoped, but the hetero-interfaces of two such materials can show electrical conductivity as large as in a metal. Although charge transfer is…

Using Landau-Ginzburg-Devonshire approach we calculated the equilibrium distributions of electric field, polarization and space charge in the ferroelectric-semiconductor heterostructures containing proper or incipient ferroelectric thin…

Built-in electric fields across heterojunctions between semiconducting materials underpin the functionality of modern device technologies. Heterojunctions between semiconductors and epitaxially grown crystalline oxides provide a rich…

Superconductivity has recently been observed in Sr-doped NdNiO2 films grown on SrTiO3. Whether it is caused by or related to the interface remains an open question. To address this issue, we use density functional theory calculation and…

材料科学 · 物理学 2020-07-15 Ri He , Peiheng Jiang , Yi Lu , Yidao Song , Mingxing Chen , Mingliang Jin , Lingling Shui , Zhicheng Zhong

Interfaces can differ from their parent compounds in terms of charge, spin, and orbital orders and are fertile ground for emergent phenomena, strongly correlated physics, and device applications. Here, we discover that ferroelectric order…

超导电性 · 物理学 2025-06-19 M. D. Dong , X. B. Cheng , M. Zhang , J. Wu

Macroscopically, confined electron gases at polar oxide interfaces are rationalized within the simple "polar catastrophe" model. At the microscopic level, however, many other effects such as electric fields, structural distortions and…

材料科学 · 物理学 2015-05-20 Massimiliano Stengel

Using ab initio thermodynamics we compile a phase diagram for the surface of Fe3O4(001) as a function of temperature and oxygen pressures. A hitherto ignored polar termination with octahedral iron and oxygen forming a wave-like structure…

材料科学 · 物理学 2009-11-11 R. Pentcheva , F. Wendler , H. L. Meyerheim , W. Moritz , N. Jedrecy , M. Scheffler

The full monolayer of pentacene adsorbed on rutile TiO$_2$(110) provides an intriguing model to study charge-transfer excitations where the optically excited electrons and holes reside on different sides of the internal interface between…

材料科学 · 物理学 2016-10-07 M. P. Ljungberg , O. Vänskä , P. Koval , S. W. Koch , M. Kira , D. Sánchez-Portal

In the polar catastrophe scenario, polar discontinuity accounts for the driving force of the formation of a two-dimensional electron gas (2DEG) at the interface between polar and non-polar insulators. In this paper, we substitute the usual,…

介观与纳米尺度物理 · 物理学 2015-09-18 Binglun Yin , Pablo Aguado-Puente , Shaoxing Qu , Emilio Artacho

Atomic-scale understanding of HfO2 ferroelectricity is important to help address many challenges in developing reliable and high-performance ferroelectric HfO2 (fe-HfO2) based devices. Though investigated from different angles, a factor…

材料科学 · 物理学 2022-01-05 Shihui Zhao , Bowen Li , Yuzheng Guo , Huanglong Li

Negative charge transfer $AB$O$_3$ oxides may undergo electronic metal--insulator transitions (MIT) concomitant with a dilation and contraction of nearly rigid octahedra. On both sides of the MIT are in-phase or out-of-phase (or both)…

材料科学 · 物理学 2015-06-15 Antonio Cammarata , James M. Rondinelli

The recently proposed Partition Theory (PT) [J.Phys.Chem.A 111, 2229 (2007)] is illustrated on a simple one-dimensional model of a heteronuclear diatomic molecule. It is shown that a sharp definition for the charge of molecular fragments…

其他凝聚态物理 · 物理学 2016-09-28 Morrel H. Cohen , Adam Wasserman , Roberto Car , Kieron Burke

Previous work has demonstrated the existence of soliton defect states with charges +/- e/2 in the limits of zero and of infinite on-site Coulomb interactions in the one-dimensional (1D) quarter-filled band. For large but finite on-site…

强关联电子 · 物理学 2009-10-31 R. T. Clay , S. Mazumdar , D. K. Campbell

The mechanism responsible for the extraordinary interface conductivity of LaAlO$_{3}$ on SrTiO$_{3}$ and its insulator-metal transition remains controversial. Here, using density functional theory calculations, we establish a comprehensive…

强关联电子 · 物理学 2015-07-21 Jun Zhou , Teguh Citra Asmara , Ming Yang , George A. Sawatzky , Yuan Ping Feng , Andrivo Rusydi

We present the results of our calculation of the effects of dynamical coupling of a charge-carrier to the electronic polarization and the field-induced lattice displacements at the gate-interface of an organic field-effect transistor…

其他凝聚态物理 · 物理学 2009-11-11 H. Houili , J. D. Picon , M. N. Bussac , L. Zuppiroli

The structure of the $(\sqrt{5}\times\sqrt{5})R26.6^\circ$ reconstruction of LaAlO$_3$ (001) has been determined using transmission electron diffraction combined with direct methods. The structure is relatively simple, consisting of a…

材料科学 · 物理学 2007-05-23 C. H. Lanier , J. M. Rondinelli , B. Deng , R. Kilaas , K. R. Poeppelmeier , L. D. Marks