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Nano artifact metrics exploit unique physical attributes of nanostructured matter for authentication and clone resistance, which is vitally important in the age of Internet-of-Things where securing identities is critical. However, high-cost…

Artifact metrics is an information security technology that uses the intrinsic characteristics of a physical object for authentication and clone resistance. Here, we demonstrate nano-artifact metrics based on silicon nanostructures formed…

The nanostructure of hydrogenated amorphous silicon (a Si:H) is studied by a combination of small-angle X-ray (SAXS) and neutron scattering (SANS) with a spatial resolution of 0.8 nm. The a-Si:H materials were deposited using a range of…

材料科学 · 物理学 2020-11-04 Eike Gericke , Jimmy Melskens , Robert Wendt , Markus Wollgarten , Armin Hoell , Klaus Lips

Silicon self-assembly at step edges in the initial stage of homoepitaxial growth on a vicinal Si(111) surface is studied by scanning tunneling microscopy (STM). The resulting atomic structures change dramatically from a parallel array of…

材料科学 · 物理学 2007-05-23 T. Sekiguchi , S. Yoshida , K. M. Itoh

Silicon nanostructuring imparts unique material properties including antireflectivity, antifogging, anti-icing, self-cleaning, and/or antimicrobial activity. To tune these properties however, a good control over features size and shape is…

Direct electron detectors in scanning transmission electron microscopy give unprecedented possibilities for structure analysis at the nanoscale. In electronic and quantum materials, this new capability gives access to, for example, emergent…

We introduce a general method which allows reconstruction of electronic band structure of nanocrystals from ordinary real-space electronic structure calculations. A comprehensive study of band structure of a realistic nanocrystal is given…

介观与纳米尺度物理 · 物理学 2013-05-15 Prokop Hapala , Kateřina Kůsová , Ivan Pelant , Pavel Jelinek

Controlled formation of porous silicon has been of primary importance for numerous landmark applications such as light emitting sources, sensors, actuators, drug delivery systems, and energy storage applications. Frequently explored methods…

With few systems of technological interest having been studied as extensively as elemental silicon, there currently exists a wide disparity between the number of predicted low-energy silicon polymorphs and those, which have been…

材料科学 · 物理学 2017-11-08 Eric Jones , Vladan Stevanovic

Networks of silicon nanowires possess intriguing electronic properties surpassing the predictions based on quantum confinement of individual nanowires. Employing large-scale atomistic pseudopotential computations, as yet unexplored branched…

介观与纳米尺度物理 · 物理学 2013-11-18 Ümit Keleş , Bartosz Liedke , Karl-Heinz Heinig , Ceyhun Bulutay

Recent experiments on hydrogenated amorphous silicon using infrared absorption spectroscopy have indicated the presence of mono- and divacancy in samples for concentration of up to 14\% hydrogen. Motivated by this observation, we study the…

材料科学 · 物理学 2015-05-19 Parthapratim Biswas , Rajendra Timilsina

Amorphous silicon (a-Si) is a widely studied non-crystalline material, and yet the subtle details of its atomistic structure are still unclear. Here, we show that accurate structural models of a-Si can be obtained by harnessing the power of…

The nucleation and structure of silicon nanocrystals formed by different preparation conditions and silicon concentration (28 - 70 area %) have been studied using Transmission Electron Microscopy (TEM), Energy Filtered TEM (EFTEM) and…

The structure of amorphous silicon (a-Si) has been studied for decades. The two main theories are based on a continuous random network and on a `paracrystalline' model, respectively -- the latter being defined as showing localized…

材料科学 · 物理学 2024-07-24 Louise A. M. Rosset , David A. Drabold , Volker L. Deringer

The 10-nm-scale structure in silicon cleavage is studied by the quantum mechanical calculations for large-scale electronic structure. The cleavage process on the order of 10 ps shows surface reconstruction and step formation. These…

材料科学 · 物理学 2007-05-23 Takeo Hoshi , Yusuke Iguchi , Takeo Fujiwara

Strain has a crucial effect on the optical and electronic properties of nanostructures. We calculate the atomistic strain distribution in silicon nanocrystals up to a diameter of 3.2 nm embedded in an amorphous silicon dioxide matrix. A…

介观与纳米尺度物理 · 物理学 2009-05-21 Dündar E. Yılmaz , Ceyhun Bulutay , Tahir Çağın

Amorphous silicon (a-Si) models are analyzed for structural, electronic and vibrational characteristics. Several models of various sizes have been computationally fabricated for this analysis. It is shown that a recently developed…

无序系统与神经网络 · 物理学 2018-11-29 Dale Igram , Bishal Bhattarai , Parthapratim Biswas , D. A. Drabold

Despite tremendous progress in the research on self-assembled nanotechnological building blocks such as macromolecules, nanowires, and two-dimensional materials, synthetic self-assembly methods bridging nanoscopic to macroscopic dimensions…

Understanding the structural origins of the properties of amorphous materials remains one of the most important challenges in structural science. In this study we demonstrate that local 'structural simplicity', embodied by the degree to…

A long-standing challenge is the design of chips resilient to faults and glitches. Both fine-grained gate diversity and coarse-grained modular redundancy have been used in the past. However, these approaches have not been well-studied under…

密码学与安全 · 计算机科学 2025-04-16 Ahmad T. Sheikh , Ali Shoker , Suhaib A. Fahmy , Paulo Esteves-Verissimo
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