相关论文: Frequency-dependent polarization-angle-phase-shift…
We examine the role of the microwave power in the linear polarization angle dependence of the microwave radiation induced magnetoresistance oscillations observed in the high mobility GaAs/AlGaAs two dimensional electron system. Diagonal…
We report the results of a combined microwave polarization-dependence and power-dependence study of the microwave-radiation-induced magnetoresistance oscillations in high mobility GaAs/AlGaAs heterostructure devices at liquid helium…
We examine the effect of changing the linear polarization angle $\theta$ of incident microwaves with respect to the dc current on radiation-induced magnetoresistance oscillations in a two-dimensional (2D) system within the balance-equation…
We present an experimental study of the microwave power and the linear polarization angle dependence of the microwave-induced magnetoresistance oscillations in the high-mobility GaAs/AlGaAs two-dimensional electron system. Experimental…
Light-matter coupling is investigated by rotating, by an angle \theta, the polarization of linearly polarized microwaves with respect to the long-axis of GaAs/AlGaAs Hall-bar electron devices. At low microwave power, P, experiments show a…
In the quasi two-dimensional GaAs/AlGaAs system, we investigate the effect of rotating \textit{in-situ} the electric field of linearly polarized microwaves relative to the current, on the microwave-radiation-induced magneto-resistance…
We present a detailed theoretical investigation on the radiation induced giant magnetoresistance oscillations recently discovered in high-mobility two-dimensional electron gas. Electron interactions with impurities, transverse and…
We examine the microwave-photoexcited magnetoresistance oscillations in a tilted magnetic field in the high mobility two-dimensional electron system. In analogy to the 2D Shubnikov-de Haas effect, the characteristic field, $B_{f}$, and the…
A comparative study of the radiation-induced magnetoresistance oscillations in the high mobility GaAs/AlGaAs heterostructure two dimensional electron system (2DES) under linearly- and circularlypolarized microwave excitation indicates a…
The influence of microwave radiation (1.2-140 GHz) on resistance of high-mobility two-dimensional electron gas in GaAs quantum wells is studied. Two series of microwave-induced magnetoresistance oscillations periodic in 1/B were observed…
We report on the observation of microwave-induced resistance oscillations associated with the fractional ratio n/m of the microwave irradiation frequency to the cyclotron frequency for m up to 8 in a two-dimensional electron system with…
We report on the temperature dependence of microwave-induced resistance oscillations in high-mobility two-dimensional electron systems. We find that the oscillation amplitude decays exponentially with increasing temperature, as…
Recent measurements of a 2D electron gas subjected to microwave radiation reveal a magnetoresistance with an oscillatory dependence on the ratio of radiation frequency to cyclotron frequency. We perform a diagrammatic calculation and find…
The effect of a microwave field in the frequency range from 54 to 140 $\mathrm{GHz}$ on the magnetotransport in a GaAs quantum well with AlAs/GaAs superlattice barriers and with an electron mobility no higher than $10^6$ $\mathrm{cm^2/Vs}$…
We have measured the magneto-resistance of a two-dimensional electron gas (2DEG) under continuous microwave irradiation as a function of electron density and mobility tuned with a metallic top-gate. In the entire range of density and…
Oscillations of the resistance observed under electromagnetic wave excitation in the high mobility GaAs/AlGaAs 2DES are examined as a function of the radiation frequency and the power, utilizing an empirical lineshape based on exponentially…
We observe a new type of magneto-oscillations in the photovoltage and the longitudinal resistance of a two-dimensional electron system. The oscillations are induced by microwave irradiation and are periodic in magnetic field. The period is…
We examine the phase and the period of the radiation-induced oscillatory-magnetoresistance in GaAs/AlGaAs devices utilizing in-situ magnetic field calibration by Electron Spin Resonance of DiPhenyl-Picryl-Hydrazal. The results confirm a…
The temperature dependence of phonon-induced resistance oscillations has been investigated in two-dimensional electron system with moderate mobility at large filling factors at temperature range T = 7.4 - 25.4 K. The amplitude of…
The response of two-dimensional electron gas to temperature gradient in perpendicular magnetic field under steady-state microwave irradiation is studied theoretically. The electric currents induced by temperature gradient and the…